Abstract: First sensor data indicative of a first mass flow rate of a first gas flowing to a vaporization chamber is received. The vaporization chamber includes a compound and is to transition the compound into a gaseous state. Second sensor data indicative of a second mass flow rate of a second gas including the compound and the first gas flowing out of the vaporization chamber is received. Third sensor data indicative of a third mass flow rate of the compound into the vaporization chamber is received. The first sensor data, the second sensor data, and the third sensor data is processed using a trained machine learning model to determine an estimated concentration of the compound within the second gas. At least one of a) modifying a flow rate of the first gas or b) providing the predicted concentration for display by a graphical user interface (GUI) is performed.

Abstract: A concentration sensor assembly can include a vaporization chamber having a compound. The concentration sensor assembly may include a first flow path coupled to the vaporization chamber. The first flow path may direct a first gas to the vaporization chamber. A second flow path can direct a second gas out of the vaporization chamber. The second gas can include the compound and the first gas. A first sensor is disposed along the first flow path. The first sensor measures first data indicative of a first mass flow rate of the first gas. A second sensor is disposed along the second flow path. The second sensor measure second data indicative of a second mass flow rate of the second gas. A computing device may determine a concentration of the vaporizable substance within the second gas based on the first data and the second data.

Abstract: An electronic device manufacturing system includes a transfer chamber, a tool station situated within the transfer chamber, a process chamber coupled to the transfer chamber, and a transfer chamber robot. The transfer chamber robot is configured to transfer substrates to and from the process chamber. The transfer chamber robot is further configured to be coupled to a sensor tool comprising one or more sensors configured to take measurements inside the process chamber. The sensor tool is retrievable from the tool station by an end effector of the transfer chamber robot.

Abstract: Metrology slot plates, processing chamber lids and processing chambers having metrology slot plates are described. Each of the metrology slot plates independently comprises one or more of a plate blank, a reflectometer, a capacitance sensor, a gas flow meter, a manometer, a pyrometer, a distance sensor (laser) or an emissometer.

Abstract: Disclosed herein are embodiments of a transfer chamber robot and methods of using the same. In one embodiment, a process tool for an electronic device manufacturing system comprises a transfer chamber, process chamber coupled to the transfer chamber, and a transfer chamber robot. The transfer chamber robot is configured to transfer substrates to and from the process chamber, and comprises a sensor configured to take measurements inside the process chamber.

Abstract: A concentration sensor assembly can include a vaporization chamber having a compound. The concentration sensor assembly may include a first flow path coupled to the vaporization chamber. The first flow path may direct a first gas to the vaporization chamber. A second flow path can direct a second gas out of the vaporization chamber. The second gas can include the compound and the first gas. A first sensor is disposed along the first flow path. The first sensor measures first data indicative of a first mass flow rate of the first gas. A second sensor is disposed along the second flow path. The second sensor measure second data indicative of a second mass flow rate of the second gas. A computing device may determine a concentration of the vaporizable substance within the second gas based on the first data and the second data.

Abstract: Embodiments disclosed herein may include a heater pedestal. In an embodiment, the heater pedestal may comprise a heater pedestal body and a conductive mesh embedded in the heater pedestal. In an embodiment, the conductive mesh is electrically coupled to a voltage source In an embodiment, the heater pedestal may further comprise a support surface on the heater pedestal body. In an embodiment, the support surface comprises a plurality of pillars extending out from the heater pedestal body and arranged in concentric rings. In an embodiment pillars in an outermost concentric ring have a height that is greater than a height of pillars in an innermost concentric ring.

Abstract: Various methods, apparatuses/systems, and media for implementing a payment optimizer application module are disclosed. A supplier system accepts a predefined fixed net payment term for all participating buyers on a network. A processor determines weighted average cost of capital (WACC) data of buyer key data points from buyer audited statements data corresponding to a payment file data and WACC data of supplier key data points from supplier audited statements data corresponding to the payment file data. The processor also determines an optimal disbursement date of payment over the predefined fixed net payment term based on the WACC data; applies the stored set of payment rules to determine an optimal payment method corresponding to the WACC data; and automatically executes disbursement of a payment to the supplier in accordance with the optimal disbursement date based on the optimal payment method.

Abstract: Apparatus and methods for generating a flow of radicals are provided. An ion blocker is positioned a distance from a faceplate of a remote plasma source. The ion blocker has openings to allow the plasma to flow through. The ion blocker is polarized relative to a showerhead positioned on an opposite side of the ion blocker so that there are substantially no plasma gas ions passing through the showerhead.

Abstract: Apparatus and methods for generating a flow of radicals are provided. An ion blocker is positioned a distance from a faceplate of a remote plasma source. The ion blocker has openings to allow the plasma to flow through. The ion blocker is polarized relative to a showerhead positioned on an opposite side of the ion blocker so that there are substantially no plasma gas ions passing through the showerhead.

Abstract: Embodiments disclosed herein may include a heater pedestal. In an embodiment, the heater pedestal may comprise a heater pedestal body and a conductive mesh embedded in the heater pedestal. In an embodiment, the conductive mesh is electrically coupled to a voltage source In an embodiment, the heater pedestal may further comprise a support surface on the heater pedestal body. In an embodiment, the support surface comprises a plurality of pillars extending out from the heater pedestal body and arranged in concentric rings. In an embodiment pillars in an outermost concentric ring have a height that is greater than a height of pillars in an innermost concentric ring.

Abstract: Apparatus and methods for generating a flow of radicals are provided. An ion blocker is positioned a distance from a faceplate of a remote plasma source. The ion blocker has openings to allow the plasma to flow through. The ion blocker is polarized relative to a showerhead positioned on an opposite side of the ion blocker so that there are substantially no plasma gas ions passing through the showerhead.