Abstract: Embodiments of the present disclosure provide a microelectronic assembly comprising: a first integrated circuit (IC) die, the first IC die comprising an input/output (IO) circuit; and a plurality of IC dies, the plurality of IC dies comprising a second IC die, the second IC die comprising a microcontroller circuit to control the IO circuit, wherein the first IC die and the plurality of IC dies are coupled with interconnects having a pitch of less than 10 micrometers between adjacent ones of the interconnects.

Abstract: A microelectronic assembly is provided, comprising: a first integrated circuit (IC) die having a first connection to a first serializer/deserializer (SERDES) circuit and a second connection to a second SERDES circuit; a second IC die having the first SERDES circuit; and a third IC die having the second SERDES circuit, in which the first IC die is in a first layer, the second IC die and the third IC die are in a second layer not coplanar with the first layer, the first layer and the second layer are coupled by interconnects having a pitch of less than 10 micrometers between adjacent ones of the interconnects, and the first SERDES circuit and the second SERDES circuit are coupled by a conductive pathway.

Abstract: An Integrated Circuit (IC), comprising a first conductive trace on a first die, a second conductive trace on a second die, and a conductive pathway electrically coupling the first conductive trace with the second conductive trace. The second die is coupled to the first die with interconnects. The conductive pathway comprises a portion of the interconnects located proximate to a periphery of a region in the first die through which the first conductive trace is not routable. In some embodiments, the conductive pathway reroutes electrical connections away from the region. The region comprises a high congestion zone having high routing density in some embodiments. In other embodiments, the region comprises a “keep-out” zone.