Patents by Inventor Vivek M. Phanse

Vivek M. Phanse has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low defect density (Ga, A1, In) N and HVPE process for making same
    Patent number: 6943095
    Abstract: A low defect density (Ga,Al,In)N material. The (Ga, Al, In)N material may be of large area, crack-free character, having a defect density as low as 3×106 defects/cm2 or lower. Such (Ga,Al,In)N material is useful as a substrate for epitaxial growth of Group III-V nitride device structures thereon.
    Type: Grant
    Filed: March 21, 2002
    Date of Patent: September 13, 2005
    Assignee: Cree, Inc.
    Inventors: Robert P. Vaudo, Vivek M. Phanse, Michael A. Tischler
  • Low defect density (Ga, Al, In) N and HVPE process for making same
    Publication number: 20020166502
    Abstract: A low defect density (Ga,Al,In)N material. The (Ga, Al, In)N material may be of large area, crack-free character, having a defect density as low as 3×106 defects/cm2 or lower. Such (Ga,Al,In)N material is useful as a substrate for epitaxial growth of Group III-V nitride device structures thereon.
    Type: Application
    Filed: March 21, 2002
    Publication date: November 14, 2002
    Inventors: Robert P. Vaudo, Vivek M. Phanse, Michael A. Tischler
  • Low defect density (Ga, Al, In)N and HVPE process for making same
    Patent number: 6440823
    Abstract: A low defect density (Ga,Al,In)N material. The (Ga, Al, In)N material may be of large area, crack-free character, having a defect density as low as 3×106 defects/cm2 or lower. Such (Ga,Al,In)N material is useful as a substrate for epitaxial growth of Group III-V nitride device structures thereon.
    Type: Grant
    Filed: October 26, 1998
    Date of Patent: August 27, 2002
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Robert P. Vaudo, Vivek M. Phanse, Michael A. Tischler