Patents by Inventor Vivek Yadav

Vivek Yadav has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250024663
    Abstract: According to one or more embodiments of the disclosure, a method comprises: forming a first recess for a bit line contact structure of a semiconductor device; providing a liner on a surface of the first recess; etching the linear to open at least part of a bottom of the liner, forming a second recess under the first recess; performing an epitaxial growth process through the second recess; and providing a conductive material to the first and second recesses to form at least part of the bit line contact structure.
    Type: Application
    Filed: June 19, 2024
    Publication date: January 16, 2025
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Vivek Yadav, Li Wei Fang
  • Patent number: 12165636
    Abstract: Devices and techniques are generally described for inference reduction in natural language processing using semantic similarity-based caching. In various examples, first automatic speech recognition (ASR) data representing a first natural language input may be determined. A cache may be searched using the first ASR data. A first skill associated with the first ASR data may be determined from the cache. In some examples, first intent data representing a semantic interpretation of the first natural language input data may be determined by using a first natural language process associated with the first skill.
    Type: Grant
    Filed: November 10, 2022
    Date of Patent: December 10, 2024
    Assignee: AMAZON TECHNOLOGIES, INC.
    Inventors: Kiana Hajebi, Vivek Yadav, Pradeep Natarajan
  • Publication number: 20240389302
    Abstract: Methods, systems, and devices for contact foot wet pullback with liner wet punch are described. A first etching operation may be performed on a stack of materials and a first insulative material to form a plurality of segments including contacts, the contacts formed from a first conductive material of the stack of materials and extending at least partially through the first insulative material. A first liner material may be deposited over the segments and the first insulative material, and a directional gas bias operation may be performed to transform a portion of the first liner material in contact with an extension of the contacts into a second liner material. A second etching operation may be performed to remove the second liner material and expose a surface of the extension, and a third etching operation may be performed remove at least a portion of the extension.
    Type: Application
    Filed: May 8, 2024
    Publication date: November 21, 2024
    Inventors: Jerome A. Imonigie, Chia Ying Lin, Davide Dorigo, Elisabeth Barr, Wan Rou Luo, Shi Han Wang, Sanjeev Sapra, Ashwin Panday, Vivek Yadav
  • Publication number: 20240314377
    Abstract: According to an aspect, a method includes receiving an availability resource from a first computing device associated with a studio entity, where the availability resource includes information about a media content item to be available on a media platform. The method includes storing the information of the availability resource in a database and receiving a package submission from a second computing device associated with a post-production house (PPH) entity, where the package submission includes media manifest core (MMC) data and one or more media assets associated with the media content item. The method includes executing a plurality of processing operations, including an error operation, on the package submission, using the availability resource and/or the MMC data, and, in response to determining that the error operation has resulted in an error, transmitting an error notification to the first computing device and/or the second computing device.
    Type: Application
    Filed: March 14, 2023
    Publication date: September 19, 2024
    Inventors: Vivek Yadav, Neha Jain, Sambit Padhi, Paul Alexander Charron
  • Publication number: 20240172412
    Abstract: A method used in forming memory circuitry comprises forming transistors individually comprising one source/drain region and another source/drain region. A channel region is between the one and the another source/drain regions. A conductive gate is operatively proximate the channel region. Openings are formed through insulative material that is directly above the transistors and into the another source/drain regions. Individual of the openings are directly above individual of the another source/drain regions. A laterally-outer insulator material is formed in the individual openings within and below the insulative material. A laterally-inner insulator material is formed in the individual openings within and below the insulative material laterally-over the laterally-outer insulator material. The laterally-outer insulator material and the laterally-inner insulator material are directly against one another and have an interface there-between.
    Type: Application
    Filed: August 31, 2023
    Publication date: May 23, 2024
    Applicant: Micron Technology, Inc.
    Inventors: Li Wei Fang, Vivek Yadav, Jordan D. Greenlee, Silvia Borsari
  • Publication number: 20240074158
    Abstract: A variety of applications can include an apparatus having a memory device in which, during fabrication of the memory device, processing a dielectric isolation region about an active area of a memory cell is controlled to provide enhanced electric isolation of a data line contact to the memory cell with respect to a cell contact to the memory cell. A portion of the dielectric isolation region can be recessed, creating a corner between the dielectric isolation region and a conductive region, where the conductive region is material for the active area. The corner can be filled with a dielectric material and the data line contact can be formed contacting the dielectric material and coupled to the conductive region. The cell contact can be formed to the memory cell contacting the dielectric material such that the dielectric material is between the cell contact and the data line contact.
    Type: Application
    Filed: August 15, 2023
    Publication date: February 29, 2024
    Inventors: Chunhua Yao, Song Guo, Vivek Yadav
  • Publication number: 20240002781
    Abstract: Described herein is a method for encapsulating single cells using alternating current electrospray technology in tip streaming mode. The encapsulation efficiency is over 80% and natural (alginate, collagen) and synthetic (NorHA) hydrogels and various cell types can be used. The encapsulated cells can be implanted and are protected from the host's immune response. In addition, the coating allows better tissue growth in laboratory cell cultures with a conformal mechanical support that allows molecular and nutrient transport.
    Type: Application
    Filed: December 3, 2021
    Publication date: January 4, 2024
    Inventors: Hsueh-Chia Chang, Zehao Pan, Vivek Yadav, Loan Bui, Donny Hanjaya-Putra
  • Patent number: 11854116
    Abstract: Techniques for masking images based on a particular task are described. A system masks portions of an image that are not relevant to a particular task, thus, reducing the amount of data used by applications for image processing tasks. For example, images to be processed using a hair color classification model are masked so that only portions that show the person's hair are available for the model to analyze. The system configures different masker components to mask images for different tasks. A masker component can be implemented at a user device to mask images prior to sending to an application/task-specific model.
    Type: Grant
    Filed: May 10, 2022
    Date of Patent: December 26, 2023
    Assignee: Amazon Technologies, Inc.
    Inventors: Vivek Yadav, Aayush Gupta, Yue Wu, Pradeep Natarajan, Ayush Jaiswal
  • Publication number: 20230354585
    Abstract: Methods, apparatuses, and systems related to a digit line and cell contact are described. An example apparatus includes a semiconductor structure comprising a first layer comprising a first material on sidewalls of a plurality of patterned material. The apparatus further includes a second layer comprising a nitride material on sidewalls of the first layer. The apparatus further includes a third layer comprising the first material on sidewalls of the second layer. The apparatus further includes a base area, to provide digit line and cell contact isolation for the semiconductor structure. The apparatus further includes an active area, adjacent to the base area, that is adjacent to the semiconductor structure.
    Type: Application
    Filed: April 28, 2022
    Publication date: November 2, 2023
    Inventors: Albert P. Chan, Sanjeev Sapra, Vivek Yadav, Yen Ting Lin, Devesh Dadhich Shreeram
  • Patent number: 11626107
    Abstract: Devices and techniques are generally described for inference reduction in natural language processing using semantic similarity-based caching. In various examples, first automatic speech recognition (ASR) data representing a first natural language input may be determined. A cache may be searched using the first ASR data. A first skill associated with the first ASR data may be determined from the cache. In some examples, first intent data representing a semantic interpretation of the first natural language input data may be determined by using a first natural language process associated with the first skill.
    Type: Grant
    Filed: December 7, 2020
    Date of Patent: April 11, 2023
    Assignee: AMAZON TECHNOLOGIES, INC.
    Inventors: Kiana Hajebi, Vivek Yadav, Pradeep Natarajan
  • Publication number: 20230068798
    Abstract: A system can operate a speech-controlled device to perform active speaker detection to detect an utterance using image data showing a user speaking the utterance. This enables the device to perform utterance detection using the image data and/or determine which user is speaking the utterance. To perform active speaker detection, the device processes the image data to determine expression parameters associated with the user's face and generates facial measurements based on the expression parameters. For example, the device can use the expression parameters to generate a 3D model including an agnostic facial representation and determine a mouth aspect ratio by measuring a mouth height and a mouth width of the agnostic facial representation. As the mouth aspect ratio changes when the user is speaking, the device can determine that the user is speaking and/or detect an utterance based on an amount of variation of the mouth aspect ratio.
    Type: Application
    Filed: September 2, 2021
    Publication date: March 2, 2023
    Inventors: Tyler Jerel Etchart, Vivek Yadav, Pradeep Natarajan
  • Publication number: 20230022071
    Abstract: An apparatus comprising active areas and shallow trench isolation structures on a base material. A first conductive material is vertically adjacent to an active area of the active areas and between laterally adjacent shallow trench isolation structures. A second conductive material is vertically adjacent to the first conductive material and between the laterally adjacent shallow trench isolation structures. A silicon carbide material is on sidewalls of the shallow trench isolation structures and exhibits substantially vertical sidewalls. An oxide material is adjacent to the active areas and shallow trench isolation structures, a nitride material is adjacent to the oxide material, and a digit line is adjacent to the second conductive material. An electronic system and methods of forming an apparatus are also disclosed.
    Type: Application
    Filed: July 18, 2022
    Publication date: January 26, 2023
    Inventors: Chunhua Yao, Song Guo, Vivek Yadav
  • Publication number: 20230028297
    Abstract: A method of forming a semiconductor device comprising forming a silicon carbide material on a patterned material. The silicon carbide material is subjected to a plasma to expose horizontal portions of the silicon carbide material to the plasma. The horizontal portions of the silicon carbide material are selectively removed, and the patterned material is removed to form a pattern of the silicon carbide material.
    Type: Application
    Filed: July 18, 2022
    Publication date: January 26, 2023
    Inventors: Vivek Yadav, Silvia Borsari, Song Guo
  • Publication number: 20220405528
    Abstract: Techniques for masking images based on a particular task are described. A system masks portions of an image that are not relevant to a particular task, thus, reducing the amount of data used by applications for image processing tasks. For example, images to be processed using a hair color classification model are masked so that only portions that show the person's hair are available for the model to analyze. The system configures different masker components to mask images for different tasks. A masker component can be implemented at a user device to mask images prior to sending to an application/task-specific model.
    Type: Application
    Filed: May 10, 2022
    Publication date: December 22, 2022
    Inventors: Vivek Yadav, Aayush Gupta, Yue Wu, Pradeep Natarajan, Ayush Jaiswal
  • Patent number: 11532301
    Abstract: Devices and techniques are generally described for inference reduction in natural language processing using semantic similarity-based caching. In various examples, first automatic speech recognition (ASR) data representing a first natural language input may be determined. A cache may be searched using the first ASR data. A first skill associated with the first ASR data may be determined from the cache. In some examples, first intent data representing a semantic interpretation of the first natural language input data may be determined by using a first natural language process associated with the first skill.
    Type: Grant
    Filed: December 7, 2020
    Date of Patent: December 20, 2022
    Assignee: AMAZON TECHNOLOGIES, INC.
    Inventors: Kiana Hajebi, Vivek Yadav, Pradeep Natarajan
  • Patent number: 11449241
    Abstract: A write lock request for a data object on behalf of a first data accessor is received at a lock manager. The data object is currently locked on behalf of a second data accessor. The lock manager modifies lock metadata associated with the data object to indicate the first data accessor as the primary lock owner, and designates the second data accessor as a non-primary owner.
    Type: Grant
    Filed: July 24, 2020
    Date of Patent: September 20, 2022
    Assignee: Amazon Technologies, Inc.
    Inventors: Saravana Perumal, Abhijit Chaudhuri, Mahesh H. Dhabade, Vivek Yadav, Nagaprasad K P, Rahul Kamalkishore Agrawal, Pankaj Chawla, Visakh Sakthidharan Nair
  • Patent number: 11417061
    Abstract: Devices and techniques are generally described for three dimensional mesh generation. In various examples, first two-dimensional (2D) image data representing a human may be received. In various further examples, bounding box data identifying a location of the human in the first 2D image data and joint data identifying locations of joints of the human may be received. Second 2D image data representing a cropped portion of the human may be generated using the bounding box data and the joint data. A three-dimensional (3D) mesh prediction model may be used to determine a pose, a shape, and a projection matrix for the human. The 3D mesh prediction model may be used to determine a transformed projection matrix for the portion of the human represented in the second 2D image data.
    Type: Grant
    Filed: January 27, 2021
    Date of Patent: August 16, 2022
    Assignee: AMAZON TECHNOLOGIES, INC.
    Inventors: Jianwei Feng, Vivek Yadav, Pradeep Natarajan
  • Patent number: 11334773
    Abstract: Techniques for masking images based on a particular task are described. A system masks portions of an image that are not relevant to a particular task, thus, reducing the amount of data used by applications for image processing tasks. For example, images to be processed using a hair color classification model are masked so that only portions that show the person's hair are available for the model to analyze. The system configures different masker components to mask images for different tasks. A masker component can be implemented at a user device to mask images prior to sending to an application/task-specific model.
    Type: Grant
    Filed: June 26, 2020
    Date of Patent: May 17, 2022
    Assignee: Amazon Technologies, Inc.
    Inventors: Vivek Yadav, Aayush Gupta, Yue Wu, Pradeep Natarajan, Ayush Jaiswal
  • Patent number: 11322388
    Abstract: An example method includes patterning a working surface of a semiconductor wafer. The example method includes performing a first deposition of a dielectric material in high aspect ratio trenches. The example method further includes performing a high pressure, high temperature vapor etch to recess the dielectric material in the trenches and performing a second deposition of the dielectric material to continue filling the trenches.
    Type: Grant
    Filed: August 23, 2019
    Date of Patent: May 3, 2022
    Assignee: Micron Technology, Inc.
    Inventors: Vivek Yadav, Shen Hu, Kangle Li, Sanjeev Sapra
  • Publication number: 20210406589
    Abstract: Techniques for masking images based on a particular task are described. A system masks portions of an image that are not relevant to a particular task, thus, reducing the amount of data used by applications for image processing tasks. For example, images to be processed using a hair color classification model are masked so that only portions that show the person's hair are available for the model to analyze. The system configures different masker components to mask images for different tasks. A masker component can be implemented at a user device to mask images prior to sending to an application/task-specific model.
    Type: Application
    Filed: June 26, 2020
    Publication date: December 30, 2021
    Inventors: Vivek Yadav, Aayush Gupta, Yue Wu, Pradeep Natarajan, Ayush Jaiswal