Patents by Inventor Viviana BIONDO

Viviana BIONDO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Organic electroluminescent transistor
    Patent number: 10964919
    Abstract: The present teachings relate to an organic electroluminescent transistor with improved light-emission characteristics. More specifically, the present organic electroluminescent transistor has an emissive ambipolar channel including at least one layer of an n-type semiconductor material, at least one layer of a p-type semiconductor material, and at least one layer of an emissive material arranged between the layers of the p-type and n-type semiconductor materials, where the multilayer emissive ambipolar channel includes, among various layers, a layer of a p-type semiconductor material comprising a benzothieno-benzothiophene compound, and/or a layer of an emissive material comprising a blend material that includes an organic carbazole derivative as the host matrix compound and an iridium complex as the guest emitter.
    Type: Grant
    Filed: January 24, 2017
    Date of Patent: March 30, 2021
    Assignee: Flexterra Inc.
    Inventors: Viviana Biondo, Gianluca Generali, Andrea Stefani, Michele Muccini, Guido Turatti, Mitchell Denti, Hakan Usta, Xiaoyan Chen, Antonio Facchetti
  • Organic electroluminescent transistor
    Patent number: 9825261
    Abstract: The present teachings relate to an organic electroluminescent transistor with improved light-emission characteristics. More specifically, the present organic electroluminescent transistor has an emissive ambipolar channel including at least one layer of an n-type semiconductor material, at least one layer of a p-type semiconductor material, and at least one layer of an emissive material arranged between the layers of the p-type and n-type semiconductor materials, with the n-type semiconductor material comprising an electron-transporting compound represented by formula (N-1): where X, Ar, Ar?, R1, R2, m and m? are as defined herein.
    Type: Grant
    Filed: January 24, 2017
    Date of Patent: November 21, 2017
    Assignees: Flexterra, Inc., E.T.C. S.R.L.
    Inventors: Antonio Facchetti, Hakan Usta, Mitchell Denti, Viviana Biondo, Caterina Soldano, Michele Muccini
  • Organic Electroluminescent Transistor
    Publication number: 20170237042
    Abstract: The present teachings relate to an organic electroluminescent transistor with improved light-emission characteristics. More specifically, the present organic electroluminescent transistor has an emissive ambipolar channel including at least one layer of an n-type semiconductor material, at least one layer of a p-type semiconductor material, and at least one layer of an emissive material arranged between the layers of the p-type and n-type semiconductor materials, where the multilayer emissive ambipolar channel includes, among various layers, a layer of a p-type semiconductor material comprising a benzothieno-benzothiophene compound, and/or a layer of an emissive material comprising a blend material that includes an organic carbazole derivative as the host matrix compound and an iridium complex as the guest emitter.
    Type: Application
    Filed: January 24, 2017
    Publication date: August 17, 2017
    Inventors: Viviana BIONDO, Gianluca GENERALI, Andrea STEFANI, Michele MUCCINI, Guido TURATTI, Mitchell DENTI, Hakan USTA, Xiaoyan CHEN, Antonio FACCHETTI
  • Organic Electroluminescent Transistor
    Publication number: 20170237043
    Abstract: The present teachings relate to an organic electroluminescent transistor with improved light-emission characteristics. More specifically, the present organic electroluminescent transistor has an emissive ambipolar channel including at least one layer of an n-type semiconductor material, at least one layer of a p-type semiconductor material, and at least one layer of an emissive material arranged between the layers of the p-type and n-type semiconductor materials, with the n-type semiconductor material comprising an electron-transporting compound represented by formula (N-1): where X, Ar, Ar?, R1, R2, m and m? are as defined herein.
    Type: Application
    Filed: January 24, 2017
    Publication date: August 17, 2017
    Inventors: Antonio Facchetti, Hakan Usta, Mitchell Denti, Viviana Biondo, Caterina Soldano, Michele Muccini