Abstract: A method of forming a semiconductor device comprises forming a patterned masking material comprising parallel structures and parallel trenches extending at a first angle from about 30° to about 75° relative to a lateral direction. A mask is provided over the patterned masking material and comprises additional parallel structures and parallel apertures extending at a second, different angle from about 0° to about 90° relative to the lateral direction. The patterned masking material is further patterned using the mask to form a patterned masking structure comprising elongate structures separated by the parallel trenches and additional parallel trenches. Exposed portions of a hard mask material underlying the patterned masking structure are subjected to ARDE to form a patterned hard mask material. Exposed portions of a semiconductive material underlying the patterned hard mask material are removed to form semiconductive pillar structures. Semiconductor devices and electronic systems are also described.

Abstract: A method of forming a semiconductor device comprises forming a patterned masking material comprising parallel structures and parallel trenches extending at a first angle from about 30° to about 75° relative to a lateral direction. A mask is provided over the patterned masking material and comprises additional parallel structures and parallel apertures extending at a second, different angle from about 0° to about 90° relative to the lateral direction. The patterned masking material is further patterned using the mask to form a patterned masking structure comprising elongate structures separated by the parallel trenches and additional parallel trenches. Exposed portions of a hard mask material underlying the patterned masking structure are subjected to ARDE to form a patterned hard mask material. Exposed portions of a semiconductive material underlying the patterned hard mask material are removed to form semiconductive pillar structures. Semiconductor devices and electronic systems are also described.

Abstract: A method of forming a semiconductor device comprises forming a patterned masking material comprising parallel structures and parallel trenches extending at a first angle from about 30° to about 75° relative to a lateral direction. A mask is provided over the patterned masking material and comprises additional parallel structures and parallel apertures extending at a second, different angle from about 0° to about 90° relative to the lateral direction. The patterned masking material is further patterned using the mask to form a patterned masking structure comprising elongate structures separated by the parallel trenches and additional parallel trenches. Exposed portions of a hard mask material underlying the patterned masking structure are subjected to ARDE to form a patterned hard mask material. Exposed portions of a semiconductive material underlying the patterned hard mask material are removed to form semiconductive pillar structures. Semiconductor devices and electronic systems are also described.

Abstract: A method of forming a semiconductor device comprises forming a patterned masking material comprising parallel structures and parallel trenches extending at a first angle from about 30° to about 75° relative to a lateral direction. A mask is provided over the patterned masking material and comprises additional parallel structures and parallel apertures extending at a second, different angle from about 0° to about 90° relative to the lateral direction. The patterned masking material is further patterned using the mask to form a patterned masking structure comprising elongate structures separated by the parallel trenches and additional parallel trenches. Exposed portions of a hard mask material underlying the patterned masking structure are subjected to ARDE to form a patterned hard mask material. Exposed portions of a semiconductive material underlying the patterned hard mask material are removed to form semiconductive pillar structures. Semiconductor devices and electronic systems are also described.

Abstract: Embodiments of the invention describe a method for exposing an area on a substrate to a beam. The method includes adjusting a focus offset of the beam with respect to the area on the substrate, tilting the beam or tilting the substrate, and exposing the area on the substrate with the beam, thereby generating locations within the area exposed with different foci. Furthermore embodiments describe computer programs for controlling a photolithographic system to do the same and a photolithographic system for doing the same.

Abstract: Embodiments of the invention describe a method for exposing an area on a substrate to a beam. The method includes adjusting a focus offset of the beam with respect to the area on the substrate, tilting the beam or tilting the substrate, and exposing the area on the substrate with the beam, thereby generating locations within the area exposed with different foci. Furthermore embodiments describe computer programs for controlling a photolithographic system to do the same and a photolithographic system for doing the same.

Abstract: A reticle for use in a semiconductor lithographic system includes at least two separated reticle parts. Each part includes a pattern to be transferred lithographically to a substrate. At least one of the two separated reticle parts is independently replaceable.

Abstract: A lithographic system including a light source configured to provide a light beam, a mask stage configured to hold a mask having a mask pattern, a wafer stage having a surface configured to hold a wafer having a plurality of dies, and an illumination monitor having a receiver disposed at the surface of the wafer stage and a polarimeter. A projection system is configured to shape and direct the light beam via the mask pattern to form an exposure beam and to individually expose each die with the exposure beam, and is configured to shape and direct the light beam to form a monitor beam and to expose the receiver with the monitor beam. The receiver is configured to communicate the monitor beam to the polarimeter which, based on the monitor beam, is configured to provide an illumination signal representative of properties of the light beam as it passes through the lithographic system.

Abstract: Lithography aperture lenses, illumination systems, and methods are disclosed. In a preferred embodiment, a lens includes a substantially transparent material and an electro-optical material disposed proximate the substantially transparent material, wherein the lens is a lens for an illuminator of a lithography system.

Abstract: Embodiments of the invention describe a method for exposing an area on a substrate to a beam. The method includes adjusting a focus offset of the beam with respect to the area on the substrate, tilting the beam or tilting the substrate, and exposing the area on the substrate with the beam, thereby generating locations within the area exposed with different foci. Furthermore embodiments describe computer programs for controlling a photolithographic system to do the same and a photolithographic system for doing the same.

Abstract: A reticle for use in a semiconductor lithographic system includes at least two separated reticle parts. Each part includes a pattern to be transferred lithographically to a substrate. At least one of the two separated reticle parts is independently replaceable.

Abstract: A lithographic system including a light source configured to provide a light beam, a mask stage configured to hold a mask having a mask pattern, a wafer stage having a surface configured to hold a wafer having a plurality of dies, and an illumination monitor having a receiver disposed at the surface of the wafer stage and a polarimeter. A projection system is configured to shape and direct the light beam via the mask pattern to form an exposure beam and to individually expose each die with the exposure beam, and is configured to shape and direct the light beam to form a monitor beam and to expose the receiver with the monitor beam. The receiver is configured to communicate the monitor beam to the polarimeter which, based on the monitor beam, is configured to provide an illumination signal representative of properties of the light beam as it passes through the lithographic system.

Abstract: Lithography aperture lenses, illumination systems, and methods are disclosed. In a preferred embodiment, a lens includes a substantially transparent material and an electro-optical material disposed proximate the substantially transparent material, wherein the lens is a lens for an illuminator of a lithography system.