Abstract: Disclosed are mechanisms for efficiently and accurately calculating critical area. In general terms, a method of determining a critical area for a semiconductor design layout is disclosed. The critical area is utilizable to predict yield of a semiconductor device fabricated from such layout. A semiconductor design layout having a plurality of features is first provided. The features have a plurality of polygon shapes which include nonrectangular polygon shapes. Each feature shape has at least one attribute or artifact, such as a vertex or edge. A probability of fail function is calculated based on at least a distance between two feature shape attributes or artifacts. By way of example implementations, a distance between two neighboring feature edges (or vertices) or a distance between two feature edges (or vertices) of the same feature is first determined and then used to calculate the probability of fail function.

Abstract: An electromagnetic wave-shielding thermoplastic resin composition comprising(A) 100 parts by weight of a thermoplastic resin selected from the group consisting of polypropylene resins, polystyrene resins, acrylonitrile/styrene/butadiene copolymer resin, polybutylene terephthalate resins, polyphenylene ether resins and linear aliphatic polyamide resins,(B) 30 to 300 parts by weight of electrically conductive glass fibers,(C) 5 to 40 parts by weight of carbon black, and(D) 5 to 40 parts by weight of graphite.