Patents by Inventor Vladimir Gaysler

Vladimir Gaysler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8502197
    Abstract: A device including a locally modified buried first layer. A second layer is arranged on top of the first layer. The first layer includes at least one modified section and at least one unmodified section. The modified material of the locally modified buried first layer changes or induces mechanical strain in a portion of the second layer which is arranged above the at least one modified section. At least one nanostructure is placed on top of the second layer in an area, which is located above the at least one unmodified section of the first layer or adjacent thereto, said at least one nanostructure being formed by a strain-sensitive third material deposited on the locally strained second layer.
    Type: Grant
    Filed: December 11, 2012
    Date of Patent: August 6, 2013
    Assignee: Technische Universitat Berlin
    Inventors: André Strittmatter, Andrei Schliwa, Tim David Germann, Udo W. Pohl, Vladimir Gaysler, Jan-Hindrik Schulze
  • Patent number: 8404506
    Abstract: In a method for the production of a single photon source with a given operational performance, the given operational performance for the individual photon source may be fixed by a directed setting of the fine structure gap of the excitonic energy level for at least one quantum dot. The at least one quantum dot is produced with a quantum dot size corresponding to the fine structure gap for setting.
    Type: Grant
    Filed: November 20, 2006
    Date of Patent: March 26, 2013
    Assignee: Technische Universitaet Berlin
    Inventors: Anatol Lochmann, Robert Seguin, Dieter Bimberg, Sven Rodt, Vladimir Gaysler
  • Patent number: 8349712
    Abstract: The invention inter alia relates to a method of fabricating a layer assembly comprising the steps of: arranging a first layer on top of a carrier; arranging a second layer on top of the first layer; locally modifying the material of the buried first layer and providing at least one modified section in the first layer, wherein the modified material changes or induces mechanical strain in a portion of the second layer which is arranged above the at least one modified section; after locally modifying the material of the buried first layer, depositing a third material on top of the second layer, at least one characteristic of the third material being sensitive to the local mechanical strain in the second layer.
    Type: Grant
    Filed: March 30, 2011
    Date of Patent: January 8, 2013
    Assignee: Technische Universitat Berlin
    Inventors: André Strittmatter, Andrei Schliwa, Tim David Germann, Udo W. Pohl, Vladimir Gaysler, Jan-Hindrik Schulze
  • Publication number: 20120248403
    Abstract: The invention inter alia relates to a method of fabricating a layer assembly comprising the steps of: arranging a first layer on top of a carrier; arranging a second layer on top of the first layer; locally modifying the material of the buried first layer and providing at least one modified section in the first layer, wherein the modified material changes or induces mechanical strain in a portion of the second layer which is arranged above the at least one modified section; after locally modifying the material of the buried first layer, depositing a third material on top of the second layer, at least one characteristic of the third material being sensitive to the local mechanical strain in the second layer.
    Type: Application
    Filed: March 30, 2011
    Publication date: October 4, 2012
    Inventors: André STRITTMATTER, Andrei Schliwa, Tim David Germann, Udo W. Pohl, Vladimir Gaysler, Jan-Hindrik Schulze
  • Publication number: 20100074293
    Abstract: In a method for the production of a single photon source with a given operational performance, the given operational performance for the individual photon source may be fixed by a directed setting of the fine structure gap of the excitonic energy level for at least one quantum dot. The at least one quantum dot is produced with a quantum dot size corresponding to the fine structure gap for setting.
    Type: Application
    Filed: November 20, 2006
    Publication date: March 25, 2010
    Applicant: TECHNISCHE UNIVERSITÄT BERLIN
    Inventors: Anatol Lochmann, Robert Seguin, Dieter Bimberg, Sven Rodt, Vladimir Gaysler