Abstract: In a method of growing single crystals from melt, the starting material is fused and a single crystal is pulled by crystallization of the melt on a seed crystal with controlled removal of the crystallization heat. Independent heating sources constituting thermal zones are used and constitute two equal-sized coaxial thermal zones which make up a united thermal area for the melt and the single crystal being grown and are separated by the melt starting material being carried out by heating the upper thermal zone with a heater 30-50% of power required for obtaining the melt, until in the upper thermal zone maximum temperature is reached The remaining power is supplied to the lower thermal zone to a lower heater with maintaining constant temperature of the upper thermal zone till complete melting of the charge. Single crystal enlargement and growing is conducted with controlled lowering of temperature in the upper thermal zone.

Abstract: The present invention relates to the technology of growing single crystals from melts on a seed crystal. The technical problem to be solved by the present invention is to provide a universal method of growing single crystals of various chemical composition, for example, of A2B6 and A2B5 type, and also single crystals of refractory oxides, such as sapphire. The technical result of the claimed invention is its universality with regard to the material of the single crystal to be grown, enhanced performance, and improved structural finish of resulting single crystals by ruling out melt overcooling in the coursed of growing.