Abstract: Disclosure is made of a method for producing a semiconductor array of light-emitting elements, whereby a mask is first applied onto an n-layer of an epitaxial structure consisting of a substrate GaAs of the p.sup.+ -type of conductivity with layers Ga.sub.1-x AlxAs of the p-type and Ga.sub.1-y AlyAs of the n-type applied successively onto it, which layers form a light-emitting p-n junction. The mask is produced by applying a photoresist layer onto the n-layer with subsequent exposure and etching. This is followed by introducing into the n-type layer, through said mask, an acceptor addition by means of ion implantation. After this the photoresist layer is removed, and a layer of SiO.sub.2 is applied onto the uncovered n-layer. After this diffusion heat treatment is carried out for a time and at a temperature sufficient to produce in the n-layer regions of the p-type of conductivity whose depth is at least equal to the thickness of the n-layer.

Abstract: A semiconductor indicating instrument or display device employing a silicon carbide crystal having a first ohmic contact with an n-type region and at least one second ohmic contact with a p-type region. Another region is disposed between the regions of opposite types of conductivity. The silicon carbide crystal also has an additional region with structure defects which are clusters with a concentration of 10.sup.19 cm.sup.-.sup.3 to 10.sup.22 cm.sup.-.sup.3, that region adjoining the second ohmic contact and having a thickness greater than that of the p-type region by at least 0.05 mu.