Abstract: An apparatus for forming a multicomponent thin film, such as a superconducting thin film, on a substrate includes a holder for holding at least one substrate and a deposition/reaction vessel. The deposition/reaction vessel has at least three zones, each zone being separated from adjacent zones by a wall. The zones include at least two deposition zones, where each deposition zone is configured and arranged to deposit a deposition material on the at least one substrate, and at least one reaction zone for reacting the deposition material with a reactant. The apparatus is configured and arranged to rotate the at least one substrate sequentially through the plurality of zones to form a thin film on the substrate. In some embodiments of the apparatus, the deposition/reaction vessel includes a same number of deposition zones and reaction zones which may be alternating deposition and reaction zones.

Abstract: An apparatus for forming a multicomponent thin film, such as a superconducting thin film, on a substrate includes a holder for holding at least one substrate and a deposition/reaction vessel. The deposition/reaction vessel has at least three zones, each zone being separated from adjacent zones by a wall. The zones include at least two deposition zones, where each deposition zone is configured and arranged to deposit a deposition material on the at least one substrate, and at least one reaction zone for reacting the deposition material with a reactant. The apparatus is configured and arranged to rotate the at least one substrate sequentially through the plurality of zones to form a thin film on the substrate. In some embodiments of the apparatus, the deposition/reaction vessel includes a same number of deposition zones and reaction zones which may be alternating deposition and reaction zones.

Abstract: An apparatus for forming a multicomponent thin film, such as a superconducting thin film, on a substrate includes a holder for holding at least one substrate and a deposition/reaction vessel. The deposition/reaction vessel has at least three zones, each zone being separated from adjacent zones by a wall. The zones include at least two deposition zones, where each deposition zone is configured and arranged to deposit a deposition material on the at least one substrate, and at least one reaction zone for reacting the deposition material with a reactant. The apparatus is configured and arranged to rotate the at least one substrate sequentially through the plurality of zones to form a thin film on the substrate. In some embodiments of the apparatus, the deposition/reaction vessel includes a same number of deposition zones and reaction zones which may be alternating deposition and reaction zones.

Abstract: An apparatus and a method is disclosed for in-situ deposition of thin films of high-temperature superconductor (HTS) compounds on a substrate that involves exposure of the substrate to a high pressure of oxygen and/or a high vapor pressure of volatile metallic elements such as Hg, Tl, Pb, Bi, K, Rb, etc., for stabilization of the crystal structure. Such compounds include basically all known HTS materials with Tc higher than 100 K. The method is based on pulsed laser deposition (PLD) and a cyclic (periodic) process, wherein the substrate is shuttled between a “closed” and an “open” position. In the “closed” position it is exposed to high temperature and high pressure of oxygen and/or volatile metallic species. In the “open” position, it is kept under low pressure and exposed to PLD plume. Short deposition bursts occur while the substrate is in the open position.