Patents by Inventor Vladimir N. Bolkhovsky

Vladimir N. Bolkhovsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method to manufacture LDMOS transistors with improved threshold voltage control
    Patent number: 7696049
    Abstract: A double diffused region (65), (75), (85) is formed in a semiconductor substrate or in an epitaxial layer (20) formed on the semiconductor substrate. The double diffused region is formed by first implanting light implant specie such as boron through an opening in a photoresist layer prior to a hard bake process. Subsequent to the hard bake process, a heavy implant species such as arsenic is implanted into the epitaxial layer. During subsequent processing, such as during LOCOS formation, a double diffused region is formed by a thermal anneal. A dielectric layer (120) is formed on the epitaxial layer (20) and gate structures (130), (135) are formed over the dielectric layer (120).
    Type: Grant
    Filed: October 24, 2006
    Date of Patent: April 13, 2010
    Assignee: Texas Instruments Incorporated
    Inventors: Binghua Hu, Howard S. Lee, Henry L. Edwards, John Lin, Vladimir N. Bolkhovsky
  • Method to manufacture LDMOS transistors with improved threshold voltage control
    Patent number: 7141455
    Abstract: A double diffused region (65), (75), (85) is formed in an epitaxial layer (20). The double diffused region is formed by first implanting light implant specie such as boron through an opening in a photoresist layer prior to a hard bake process. Subsequent to a hard bake process heavy implant specie such as arsenic can be implanted into the epitaxial layer. During subsequent processing such as LOCOS formation the double diffused region is formed. A dielectric layer (120) is formed on the epitaxial layer (20) and gate structures (130), (135) are formed over the dielectric layer (120).
    Type: Grant
    Filed: November 12, 2003
    Date of Patent: November 28, 2006
    Assignee: Texas Instruments Incorporated
    Inventors: Binghua Hu, Howard S. Lee, Henry L. Edwards, John Lin, Vladimir N. Bolkhovsky
  • Method to manufacture LDMOS transistors with improved threshold voltage control
    Publication number: 20040106236
    Abstract: A double diffused region (65), (75), (85) is formed in an epitaxial layer (20). The double diffused region is formed by first implanting light implant specie such as boron through an opening in a photoresist layer prior to a hard bake process. Subsequent to a hard bake process heavy implant specie such as arsenic can be implanted into the epitaxial layer. During subsequent processing such as LOCOS formation the double diffused region is formed. A dielectric layer (120) is formed on the epitaxial layer (20) and gate structures (130), (135) are formed over the dielectric layer (120).
    Type: Application
    Filed: November 12, 2003
    Publication date: June 3, 2004
    Inventors: Binghua Hu, Howard S. Lee, Henry L. Edwards, John Lin, Vladimir N. Bolkhovsky