Patents by Inventor Vladimir Nikitin

Vladimir Nikitin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10644226
    Abstract: A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes first and second reference layers, a main barrier layer, a free layer, an engineered secondary barrier layer and a second reference layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The main barrier layer is between the first reference layer and the free layer. The secondary barrier layer is between the free layer and the second reference layer. The engineered secondary barrier layer has a resistance and a plurality of regions having a reduced resistance less than the resistance. The free and reference layers each has a perpendicular magnetic anisotropy energy and an out-of-plane demagnetization energy less than the perpendicular magnetic anisotropy energy.
    Type: Grant
    Filed: June 26, 2019
    Date of Patent: May 5, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Zheng Duan, Dmytro Apalkov, Vladimir Nikitin
  • Patent number: 10585630
    Abstract: A memory device and method for providing the memory device are described. The memory device includes word lines, a first plurality of bit lines, a second plurality of bit lines and selectorless memory cells. Each selectorless memory cell is coupled with a word line, a first bit line of the first plurality of bit lines and a second bit line of the second plurality of bit lines. The selectorless memory cell includes first and second magnetic junctions. The first and second magnetic junctions are each programmable using a spin-orbit interaction torque. The word line is coupled between the first and second magnetic junctions. The first and second bit lines are coupled with the first and second magnetic junctions, respectively. The selectorless memory cell is selected for a write operation based on voltages in the word line, the first bit line and the second bit line.
    Type: Grant
    Filed: December 18, 2017
    Date of Patent: March 10, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Titash Rakshit, Borna J. Obradovic, Ryan M. Hatcher, Vladimir Nikitin, Dmytro Apalkov
  • Patent number: 10573363
    Abstract: A method of reading information stored in a magnetic memory. In a magnetic memory comprising a magnetic tunnel junction including a first reference layer and a free layer, and a spin orbit active (SO) line adjacent to the first reference layer of the magnetic tunnel junction, first and second currents are passed through the SO line so as to achieve two different directions of a magnetic moment of the first reference layer. Two electrical characteristics of the magnetic tunnel junction are determined, the two electrical characteristics corresponding to the two different directions of the magnetic moment of the first reference layer. These two electrical characteristics are then compared to determine the value of the stored information.
    Type: Grant
    Filed: March 31, 2016
    Date of Patent: February 25, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Alexey Vasilyevich Khvalkovskiy, Vladimir Nikitin, Dmytro Apalkov
  • Publication number: 20190319182
    Abstract: A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes first and second reference layers, a main barrier layer, a free layer, an engineered secondary barrier layer and a second reference layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The main barrier layer is between the first reference layer and the free layer. The secondary barrier layer is between the free layer and the second reference layer. The engineered secondary barrier layer has a resistance and a plurality of regions having a reduced resistance less than the resistance. The free and reference layers each has a perpendicular magnetic anisotropy energy and an out-of-plane demagnetization energy less than the perpendicular magnetic anisotropy energy.
    Type: Application
    Filed: June 26, 2019
    Publication date: October 17, 2019
    Inventors: Zheng Duan, Dmytro Apalkov, Vladimir Nikitin
  • Patent number: 10438638
    Abstract: A magnetic device and method for providing the device are described. The magnetic device includes magnetic junction(s) and spin-orbit interaction active layer(s) adjacent to the magnetic junction free layer(s). The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states. Providing the pinned and/or free layer(s) includes providing a magnetic layer including a glass-promoting component, providing a sacrificial oxide on the magnetic layer, providing a sacrificial layer on the sacrificial oxide and performing anneal(s) of the magnetic layer, the sacrificial oxide layer and the sacrificial layer at anneal temperature(s) greater than 300 degrees Celsius and not exceeding 475 degrees Celsius. The magnetic layer is amorphous as-deposited but is at least partially crystallized after the anneal(s). The sacrificial layer includes a sink for the glass-promoting component.
    Type: Grant
    Filed: April 27, 2018
    Date of Patent: October 8, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Xueti Tang, Mohamad Towfik Krounbi, Gen Feng, Vladimir Nikitin
  • Patent number: 10439133
    Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a hybrid free layer. The hybrid free layer is switchable between stable magnetic states using a current passed through the magnetic junction. The nonmagnetic spacer layer is between the free layer and the reference layer. The hybrid free layer includes a soft magnetic layer, a hard magnetic layer and an oxide coupling layer between the hard magnetic layer and the soft magnetic layer. The soft magnetic layer has a soft layer magnetic thermal stability coefficient of not more than thirty. The hard magnetic layer has a hard layer magnetic thermal stability coefficient of at least twice the soft layer magnetic thermal stability coefficient.
    Type: Grant
    Filed: May 23, 2017
    Date of Patent: October 8, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dmytro Apalkov, Xueti Tang, Vladimir Nikitin, Shuxia Wang, Gen Feng
  • Patent number: 10411184
    Abstract: A magnetic device and method for programming the magnetic device are described. The magnetic device includes a plurality of magnetic junctions and at least one spin-orbit interaction (SO) active layer having a plurality of sides. The SO active layer(s) carry a current in direction(s) substantially perpendicular to the plurality of sides. Each of the magnetic junction(s) is adjacent to the sides and substantially surrounds a portion of the SO active layer. Each magnetic junction includes a free layer, a reference layer and a nonmagnetic spacer layer between the pinned and free layers. The SO active layer(s) exert a SO torque on the free layer due to the current passing through the SO active layer(s). The free layer is switchable between stable magnetic states. The free layer may be written using the current and, in some aspects, another current driven through the magnetic junction.
    Type: Grant
    Filed: May 1, 2018
    Date of Patent: September 10, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Vladimir Nikitin, Dmytro Apalkov
  • Publication number: 20190273201
    Abstract: A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes first and second reference layers, a main barrier layer having a first thickness, a free layer, an engineered secondary barrier layer and a second reference layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The main barrier layer is between the first reference layer and the free layer. The secondary barrier layer is between the free layer and the second reference layer. The engineered secondary barrier layer has a resistance, a second thickness less than the first thickness and a plurality of regions having a reduced resistance less than the resistance. The free and reference layers each has a perpendicular magnetic anisotropy energy and an out-of-plane demagnetization energy less than the perpendicular magnetic anisotropy energy.
    Type: Application
    Filed: May 1, 2018
    Publication date: September 5, 2019
    Inventors: Zheng Duan, Dmytro Apalkov, Vladimir Nikitin
  • Publication number: 20190273202
    Abstract: A magnetic device and method for programming the magnetic device are described. The magnetic device includes a plurality of magnetic junctions and at least one spin-orbit interaction (SO) active layer having a plurality of sides. The SO active layer(s) carry a current in direction(s) substantially perpendicular to the plurality of sides. Each of the magnetic junction(s) is adjacent to the sides and substantially surrounds a portion of the SO active layer. Each magnetic junction includes a free layer, a reference layer and a nonmagnetic spacer layer between the pinned and free layers. The SO active layer(s) exert a SO torque on the free layer due to the current passing through the SO active layer(s). The free layer is switchable between stable magnetic states. The free layer may be written using the current and, in some aspects, another current driven through the magnetic junction.
    Type: Application
    Filed: May 1, 2018
    Publication date: September 5, 2019
    Inventors: Vladimir Nikitin, Dmytro Apalkov
  • Patent number: 10381550
    Abstract: A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes first and second reference layers, a main barrier layer having a first thickness, a free layer, an engineered secondary barrier layer and a second reference layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The main barrier layer is between the first reference layer and the free layer. The secondary barrier layer is between the free layer and the second reference layer. The engineered secondary barrier layer has a resistance, a second thickness less than the first thickness and a plurality of regions having a reduced resistance less than the resistance. The free and reference layers each has a perpendicular magnetic anisotropy energy and an out-of-plane demagnetization energy less than the perpendicular magnetic anisotropy energy.
    Type: Grant
    Filed: May 1, 2018
    Date of Patent: August 13, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Zheng Duan, Dmytro Apalkov, Vladimir Nikitin
  • Patent number: 10305026
    Abstract: A magnetic memory cell includes: a first spin-orbit interaction active layer; a first magnetic free layer on the first spin-orbit interaction active layer, the first magnetic free layer having a changeable magnetization; a first nonmagnetic spacer layer on the first magnetic free layer; a reference layer having a fixed magnetization on the first nonmagnetic spacer layer; a second nonmagnetic spacer layer on the reference layer; a second magnetic free layer on the second nonmagnetic spacer layer, the second magnetic free layer having a changeable magnetization; and a second spin-orbit interaction active layer on the second magnetic free layer.
    Type: Grant
    Filed: March 10, 2016
    Date of Patent: May 28, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dmytro Apalkov, Vladimir Nikitin
  • Patent number: 10297300
    Abstract: A method for measuring a temperature of magnetic junction switchable using spin transfer. The magnetic junction includes at least one magnetic layer. The method includes measuring a temperature variation of at least one magnetic characteristic for the magnetic layer(s) versus temperature. The method also includes measuring a bias variation in the magnetic characteristic versus an electrical bias for the magnetic junction. This measurement is performed such that spin transfer torque-induced variation(s) in the magnetic characteristic(s) are accounted for. The temperature versus the electrical bias for the magnetic junction is determined based on the temperature variation and the bias variation.
    Type: Grant
    Filed: September 15, 2015
    Date of Patent: May 21, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sebastian Schafer, Dmytro Apalkov, Alexey Vasilyevitch Khvalkovskiy, Vladimir Nikitin, Robert Beach, Zheng Duan
  • Patent number: 10276226
    Abstract: A method for measuring a temperature of magnetic junction switchable using spin transfer. The magnetic junction includes at least one magnetic layer. The method includes measuring a temperature variation of at least one magnetic characteristic for the magnetic layer(s) versus temperature. The method also includes measuring a bias variation in the magnetic characteristic versus an electrical bias for the magnetic junction. This measurement is performed such that spin transfer torque-induced variation(s) in the magnetic characteristic(s) are accounted for. The temperature versus the electrical bias for the magnetic junction is determined based on the temperature variation and the bias variation.
    Type: Grant
    Filed: June 11, 2018
    Date of Patent: April 30, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sebastian Schafer, Dmytro Apalkov, Alexey Vasilyevitch Khvalkovskiy, Vladimir Nikitin, Robert Beach, Zheng Duan
  • Publication number: 20190079701
    Abstract: A memory device and method for providing the memory device are described. The memory device includes word lines, a first plurality of bit lines, a second plurality of bit lines and selectorless memory cells. Each selectorless memory cell is coupled with a word line, a first bit line of the first plurality of bit lines and a second bit line of the second plurality of bit lines. The selectorless memory cell includes first and second magnetic junctions. The first and second magnetic junctions are each programmable using a spin-orbit interaction torque. The word line is coupled between the first and second magnetic junctions. The first and second bit lines are coupled with the first and second magnetic junctions, respectively. The selectorless memory cell is selected for a write operation based on voltages in the word line, the first bit line and the second bit line.
    Type: Application
    Filed: December 18, 2017
    Publication date: March 14, 2019
    Inventors: Titash Rakshit, Borna J. Obradovic, Ryan M. Hatcher, Vladimir Nikitin, Dmytro Apalkov
  • Patent number: 10170518
    Abstract: Magnetic junctions usable in a magnetic device and a method for providing the magnetic junctions are described. A patterned seed layer is provided. The patterned seed layer includes magnetic seed islands interspersed with an insulating matrix. At least a portion of the magnetoresistive stack is provided after the patterned seed layer. The magnetoresistive stack includes at least one magnetic segregating layer. The magnetic segregating layer(s) include at least one magnetic material and at least one insulator. The method anneals the at least the portion of the magnetoresistive stack such that the at least one magnetic segregating layer segregates. The constituents of the magnetic segregating layer segregate such that portions of magnetic material(s) align with the magnetic seed islands(s) and such that portions of the insulator(s) align with the insulating matrix.
    Type: Grant
    Filed: July 25, 2017
    Date of Patent: January 1, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Vladimir Nikitin, Dmytro Apalkov, Sebastian Schafer
  • Patent number: 10164177
    Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. A first portion of a magnetoresistive stack corresponding to the magnetic junction is provided. Providing this portion of the magnetoresistive stack includes providing at least one layer for a free layer of the magnetic junction. A second portion of the magnetoresistive stack is provided after the step of providing the first portion of the magnetoresistive stack. The magnetoresistive stack is patterned to provide the magnetic junction after the step of providing the second portion of the magnetoresistive stack. An ambient temperature for the magnetoresistive stack and the magnetic junction does not exceed a crystallization temperature of the free layer after the step of providing the free layer through the step of patterning the magnetoresistive stack.
    Type: Grant
    Filed: February 28, 2017
    Date of Patent: December 25, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sebastian Schafer, Dmytro Apalkov, Vladimir Nikitin, Don Koun Lee
  • Publication number: 20180350873
    Abstract: Magnetic junctions usable in a magnetic device and a method for providing the magnetic junctions are described. A patterned seed layer is provided. The patterned seed layer includes magnetic seed islands interspersed with an insulating matrix. At least a portion of the magnetoresistive stack is provided after the patterned seed layer. The magnetoresistive stack includes at least one magnetic segregating layer. The magnetic segregating layer(s) include at least one magnetic material and at least one insulator. The method anneals the at least the portion of the magnetoresistive stack such that the at least one magnetic segregating layer segregates. The constituents of the magnetic segregating layer segregate such that portions of magnetic material(s) align with the magnetic seed islands(s) and such that portions of the insulator(s) align with the insulating matrix.
    Type: Application
    Filed: July 25, 2017
    Publication date: December 6, 2018
    Inventors: Vladimir Nikitin, Dmytro Apalkov, Sebastian Schafer
  • Publication number: 20180294024
    Abstract: A method for measuring a temperature of magnetic junction switchable using spin transfer. The magnetic junction includes at least one magnetic layer. The method includes measuring a temperature variation of at least one magnetic characteristic for the magnetic layer(s) versus temperature. The method also includes measuring a bias variation in the magnetic characteristic versus an electrical bias for the magnetic junction. This measurement is performed such that spin transfer torque-induced variation(s) in the magnetic characteristic(s) are accounted for. The temperature versus the electrical bias for the magnetic junction is determined based on the temperature variation and the bias variation.
    Type: Application
    Filed: June 11, 2018
    Publication date: October 11, 2018
    Inventors: Sebastian Schafer, Dmytro Apalkov, Alexey Vasilyevitch Khvalkovskiy, Vladimir Nikitin, Robert Beach, Zheng Duan
  • Publication number: 20180269384
    Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes a free layer, first and second reference layers, and first and second nonmagnetic spacer layers. The free layer is switchable between stable magnetic states. The first and second nonmagnetic spacer layers are between the free layer and first and second reference layers. The first and second reference layers have first and second reference layer magnetic lengths. The free layer has a free layer magnetic length less than the free layer physical length and less than the first and second reference layer magnetic lengths. The free layer magnetic length has a first end and a second end opposite to the first end. The free layer and the reference layers are oriented such that the first and second reference layer magnetic lengths extend past the first and second ends of the free layer.
    Type: Application
    Filed: May 10, 2018
    Publication date: September 20, 2018
    Inventors: Shuxia Wang, Dmytro Apalkov, Vladimir Nikitin
  • Publication number: 20180261762
    Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a hybrid free layer. The hybrid free layer is switchable between stable magnetic states using a current passed through the magnetic junction. The nonmagnetic spacer layer is between the free layer and the reference layer. The hybrid free layer includes a soft magnetic layer, a hard magnetic layer and an oxide coupling layer between the hard magnetic layer and the soft magnetic layer. The soft magnetic layer has a soft layer magnetic thermal stability coefficient of not more than thirty. The hard magnetic layer has a hard layer magnetic thermal stability coefficient of at least twice the soft layer magnetic thermal stability coefficient.
    Type: Application
    Filed: May 23, 2017
    Publication date: September 13, 2018
    Inventors: Dmytro Apalkov, Xueti Tang, Vladimir Nikitin, Shuxia Wang, Gen Feng