Abstract: Process heaters and associated methods of processing with ultra-low pollutant emissions are provided. The process heaters and methods utilize a heat exchange tube having disposed therein a radiant permeable matrix burner at a first end of the tube. The tube further includes a thermally insulated insert disposed adjacent the radiant burner opposite an oxidant-fuel mixer that feeds the burner. The process heaters and methods act to reduce emissions of CO and NOx.

Abstract: Process heaters and associated methods of processing with ultra-low pollutant emissions are provided. The process heaters and methods utilize a heat exchange tube having disposed therein a radiant permeable matrix burner at a first end of the tube. The tube further includes a thermally insulated insert disposed adjacent the radiant burner opposite an oxidant-fuel mixer that feeds the burner. The process heaters and methods act to reduce emissions of CO and NOx.

Abstract: According to the present invention, a composite semiconductor substrate (1) for epitaxial growth of a compound semiconductor material (1) comprises a ceramic semiconductor support layer (4), and a single crystalline epitaxial layer (3) formed of the compound semi-conductor material on the ceramic semiconductor support layer.

Abstract: An HVPE reactor arrangement comprises a reaction chamber (1), a gas inlet (2) for introducing process gases to the reaction chamber, a residual gas outlet (3), and a pump (4) for evacuating the residual gases from the reaction chamber via the residual gas outlet, the pump being capable of creating and maintaining in the reaction chamber a pressure less than or equal to about 100 mbar. According to the present invention, the reactor arrangement comprises means (6, 7, V2, V3) for supplying dissolving fluid to the pump for dissolving the possible parasitic deposition of the agents of the residual gases on the pump inner surfaces.

Abstract: A chemical vapor deposition reactor for depositing a thin film on at least a substrate through a reaction between a vertical input reagent gas flow and the at least a substrate is provided, in which a vertical output reagent gas flow is produced after the reaction. The reactor includes a vertical tube, at least a reaction chamber located inside the vertical tube, an input flow baffle located on the at least a reaction chamber, and at least a gas exit installed on the at least a reaction chamber for exhausting the vertical input reagent gas flow and the vertical output reagent gas flow. In addition, the substrate is located at the bottom of the at least a reaction chamber. The provided reactors allow the achievement of more efficient heating process, lower gas consumption and higher growth uniformity than the conventional reactors.

Abstract: A chemical vapor deposition reactor for depositing a thin film on at least a substrate through a reaction between a vertical input reagent gas flow and the at least a substrate is provided, in which a vertical output reagent gas flow is produced after the reaction. The reactor includes a vertical tube, at least a reaction chamber located inside the vertical tube, an input flow baffle located on the at least a reaction chamber, and at least a gas exit installed on the at least a reaction chamber for exhausting the vertical input reagent gas flow and the vertical output reagent gas flow. In addition, the substrate is located at the bottom of the at least a reaction chamber. The provided reactors allow the achievement of more efficient heating process, lower gas consumption and higher growth uniformity than the conventional reactors.

Abstract: A surfacing method comprises feeding alloying material to the weld pool in between two consumable electrodes, with the distance between those electrodes being determined depending on the diameter of the electrodes, feed mass velocity of the alloying material and the total feed mass velocity of the electrodes. An apparatus for controlling the surfacing process according to the proposed method includes an electrode feed rate transducer connected to series-coupled converters, one of which converters determines the ratio of the amount of the alloying material to the total amount of metal being fed to the weld pool, and the other one determines the alloying degree of the surface layer being formed. The converters are connected to an adder unit connected to a device for delivering additional alloying material whereas the converter for determining the alloying degree includes a programmer device and is connected with the device for feeding the alloying material.

Abstract: The steel according to the invention consists of 0.12-0.20% by weight of carbon, 0.15-0.37% by weight of silicon, 0.3-0.8% by weight of manganese, 1.6-2.7% by weight of chromium, 0.8-2.0% by weight of nickel, 0.5-1.0% by weight of molybdenum, 0.05-0.15% by weight of vanadium, 0.002-0.08% by weight of cerium, 0.01-0.10% by weight of copper, 0.0005-0.009% by weight of antimony, 0.0005-0.009% by weight of tin, 0.001-0.02% by weight of sulphur, 0.002-0.02% by weight of phosphorus, 96.246-92.862% by weight of iron.The steel exhibits improved resistance against neutron radiation. At 300.degree. C. and neutron fluence of 1.10.sup.20 neutr./cm.sup.2, the transition embrittlement temperature increases by no more than 50.degree. C. The steel is designed for application in structural members having a wall thickness of up to 650 mm and has ultimate strength .sigma..sub.B at 350.degree. C. of at least 55 kgf/mm.sup.2. The steel does not require immediate temper after welding.

Abstract: A steel containing in percent by weight:______________________________________ carbon from 0.13 to 0.8 silicon from 0.15 to 0.3 manganese from 0.3 to 0.6 chromium from 1.6 to 2.5 nickel from 1.0 to 2.0 molybdenum from 0.5 to 0.7 vanadium from 0.01 to 0.12 copper from 0.01 to 0.05 antimony from 0.0005 to 0.009 tin from 0.0005 to 0.009 phosphorus from 0.001 to 0.005 arsenic from 0.0005 to 0.002 iron, the balance, ______________________________________the total amount of phosphorus and arsenic contained in said composition is expressed by the following relationship:P+5As.ltoreq.1.10.sup.-2 wt.%.

Abstract: The apparatus comprises a cooled mould mounted on a bottom plate, a roof mounted on the mould, non-consumable electrodes connected to a power source and introduced into the melting chamber of the mould through sealed apertures in the roof, and a liquid metal pouring system incorporating a metal conduit with a funnel mounted in an aperture in the roof and an inclined chute positioned above the metal conduit funnel. The roof is provided with a gas exhaust pipe and with input funnels for feeding slag and alloying admixtures. The junction between the roof and the mould is sealed. The non-consumable electrodes are arranged around the circumference of the melting chamber for vertical movement, whereas the inclined chute is adapted to move in the horizontal plane.The enclosed melting chamber makes it possible to reduce heat losses and to maintain a controlled atmosphere within the mould.