Abstract: Process heaters and associated methods of processing with ultra-low pollutant emissions are provided. The process heaters and methods utilize a heat exchange tube having disposed therein a radiant permeable matrix burner at a first end of the tube. The tube further includes a thermally insulated insert disposed adjacent the radiant burner opposite an oxidant-fuel mixer that feeds the burner. The process heaters and methods act to reduce emissions of CO and NOx.

Abstract: Process heaters and associated methods of processing with ultra-low pollutant emissions are provided. The process heaters and methods utilize a heat exchange tube having disposed therein a radiant permeable matrix burner at a first end of the tube. The tube further includes a thermally insulated insert disposed adjacent the radiant burner opposite an oxidant-fuel mixer that feeds the burner. The process heaters and methods act to reduce emissions of CO and NOx.

Abstract: According to the present invention, a composite semiconductor substrate (1) for epitaxial growth of a compound semiconductor material (1) comprises a ceramic semiconductor support layer (4), and a single crystalline epitaxial layer (3) formed of the compound semi-conductor material on the ceramic semiconductor support layer.

Abstract: An HVPE reactor arrangement comprises a reaction chamber (1), a gas inlet (2) for introducing process gases to the reaction chamber, a residual gas outlet (3), and a pump (4) for evacuating the residual gases from the reaction chamber via the residual gas outlet, the pump being capable of creating and maintaining in the reaction chamber a pressure less than or equal to about 100 mbar. According to the present invention, the reactor arrangement comprises means (6, 7, V2, V3) for supplying dissolving fluid to the pump for dissolving the possible parasitic deposition of the agents of the residual gases on the pump inner surfaces.

Abstract: A chemical vapor deposition reactor for depositing a thin film on at least a substrate through a reaction between a vertical input reagent gas flow and the at least a substrate is provided, in which a vertical output reagent gas flow is produced after the reaction. The reactor includes a vertical tube, at least a reaction chamber located inside the vertical tube, an input flow baffle located on the at least a reaction chamber, and at least a gas exit installed on the at least a reaction chamber for exhausting the vertical input reagent gas flow and the vertical output reagent gas flow. In addition, the substrate is located at the bottom of the at least a reaction chamber. The provided reactors allow the achievement of more efficient heating process, lower gas consumption and higher growth uniformity than the conventional reactors.

Abstract: A chemical vapor deposition reactor for depositing a thin film on at least a substrate through a reaction between a vertical input reagent gas flow and the at least a substrate is provided, in which a vertical output reagent gas flow is produced after the reaction. The reactor includes a vertical tube, at least a reaction chamber located inside the vertical tube, an input flow baffle located on the at least a reaction chamber, and at least a gas exit installed on the at least a reaction chamber for exhausting the vertical input reagent gas flow and the vertical output reagent gas flow. In addition, the substrate is located at the bottom of the at least a reaction chamber. The provided reactors allow the achievement of more efficient heating process, lower gas consumption and higher growth uniformity than the conventional reactors.