Patents by Inventor Vladimir Ouspenski

Vladimir Ouspenski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220263091
    Abstract: An ion conductive layer can include a hygroscopic ion conductive material, such as a halide-based material. In an embodiment, the ion conductive layer can include an organic material, ammonium halide, or a combination thereof.
    Type: Application
    Filed: May 2, 2022
    Publication date: August 18, 2022
    Inventors: Ruofan WANG, Yuto TAKAGI, Michael McGAHAN, Vladimir OUSPENSKI, Gaurav ASSAT, Chuanping LI
  • Publication number: 20220263125
    Abstract: A solid electrolyte material can include a halide-based material having a crystalline structure including a disorder. In an embodiment, the solid electrolyte material can include a crystalline structure include stacking faults. In another embodiment, the solid electrolyte material can include a crystalline phase including a crystalline structure represented by a space group of the hexagonal crystal system or a space group of a rhombohedral lattice system. In another embodiment, the solid electrolyte material can include a crystalline phase including a crystalline structure represented by a monoclinic space group and a unit cell containing a reduced number of halogen atoms.
    Type: Application
    Filed: May 2, 2022
    Publication date: August 18, 2022
    Inventors: Vladimir OUSPENSKI, Gaurav ASSAT
  • Publication number: 20220255079
    Abstract: A solid ion conductive layer can include a foamed matrix and an electrolyte material including a hygroscopic material. In an embodiment, the electrolyte material can include a halide-based material, a sulfide-based material, or any combination thereof. In another embodiment, the solid ion conductive layer can include total porosity of at least 30 vol % for a total volume of the solid ion conductive layer.
    Type: Application
    Filed: May 2, 2022
    Publication date: August 11, 2022
    Inventors: Yuto TAKAGI, Chuanping Li, Ruofan Wang, Michael McGahan, Vladimir Ouspenski, Jeremy Flamanc
  • Publication number: 20220045357
    Abstract: A solid electrolyte material can include a halide-based material having a crystalline structure including a disorder. In an embodiment, the solid electrolyte material can include a crystalline structure include stacking faults. In another embodiment, the solid electrolyte material can include a crystalline phase including a crystalline structure represented by a space group of the hexagonal crystal system or a space group of a rhombohedral lattice system. In another embodiment, the solid electrolyte material can include a crystalline phase including a crystalline structure represented by a monoclinic space group and a unit cell containing a reduced number of halogen atoms.
    Type: Application
    Filed: August 6, 2021
    Publication date: February 10, 2022
    Inventors: Vladimir Ouspenski, Gaurav Assat
  • Publication number: 20210336263
    Abstract: An ion conductive layer can include a hygroscopic ion conductive material, such as a halide-based material. In an embodiment, the ion conductive layer can include an organic material, ammonium halide, or a combination thereof.
    Type: Application
    Filed: April 23, 2021
    Publication date: October 28, 2021
    Inventors: Ruofan WANG, Yuto TAKAGI, Michael McGAHAN, Vladimir OUSPENSKI, Gaurav ASSAT, Chuanping LI
  • Publication number: 20210336265
    Abstract: A solid ion conductive layer can include a foamed matrix and an electrolyte material including a hygroscopic material. In an embodiment, the electrolyte material can include a halide-based material, a sulfide-based material, or any combination thereof. In another embodiment, the solid ion conductive layer can include total porosity of at least 30 vol % for a total volume of the solid ion conductive layer.
    Type: Application
    Filed: April 23, 2021
    Publication date: October 28, 2021
    Inventors: Yuto Takagi, Chuanping Li, Ruofan Wang, Michael McGahan, Vladimir Ouspenski, Jeremy Flamanc
  • Publication number: 20210320327
    Abstract: A solid ion conductive material can include a complex metal halide. The complex metal halide can include at least one alkali metal element. In an embodiment, the solid ion conductive material including the complex metal halide can be a single crystal. In another embodiment, the ion conductive material including the complex metal halide can be a crystalline material having a particular crystallographic orientation. A solid electrolyte can include the ion conductive material including the complex metal halide.
    Type: Application
    Filed: April 14, 2021
    Publication date: October 14, 2021
    Inventors: Vladimir OUSPENSKI, Gaurav ASSAT, John M. FRANK
  • Publication number: 20210320326
    Abstract: A solid electrolyte material can include an ammonium-containing complex metal halide. In an embodiment, the ammonium-containing complex metal halide can be represented by (NH4)nM3-z(Mek+)fXn+3-z+k*f, wherein 0<n, 0?z<3, 2?k<6, 0?f?1; M comprises at least an alkali metal element, X comprises a halogen, and Me comprises a divalent metal element, a trivalent metal element, a tetravalent metal element, a pentavalent metal element, a hexavalent metal element or any combination thereof.
    Type: Application
    Filed: April 14, 2021
    Publication date: October 14, 2021
    Inventors: Vladimir OUSPENSKI, Gaurav ASSAT
  • Publication number: 20210109237
    Abstract: A scintillation crystal can include a rare earth silicate, an activator, and a Group 2 co-dopant. In an embodiment, the Group 2 co-dopant concentration may not exceed 200 ppm atomic in the crystal or 0.25 at % in the melt before the crystal is formed. The ratio of the Group 2 concentration/activator atomic concentration can be in a range of 0.4 to 2.5. In another embodiment, the scintillation crystal may have a decay time no greater than 40 ns, and in another embodiment, have the same or higher light output than another crystal having the same composition except without the Group 2 co-dopant. In a further embodiment, a boule can be grown to a diameter of at least 75 mm and have no spiral or very low spiral and no cracks. The scintillation crystal can be used in a radiation detection apparatus and be coupled to a photosensor.
    Type: Application
    Filed: December 22, 2020
    Publication date: April 15, 2021
    Inventors: Samuel BLAHUTA, Vladimir Ouspenski
  • Patent number: 10947452
    Abstract: A scintillation crystal can include Ln(1-y)REyX3, wherein Ln represents a rare earth element, RE represents a different rare earth element, y has a value in a range of 0 to 1, and X represents a halogen. In an embodiment, RE is Ce, and the scintillation crystal is doped with Sr, Ba, or a mixture thereof at a concentration of at least approximately 0.0002 wt. %. In another embodiment, the scintillation crystal can have unexpectedly improved linearity and unexpectedly improved energy resolution properties. In a further embodiment, a radiation detection system can include the scintillation crystal, a photosensor, and an electronics device. Such a radiation detection system can be useful in a variety of radiation imaging applications.
    Type: Grant
    Filed: September 4, 2019
    Date of Patent: March 16, 2021
    Assignee: SAINT-GOBAIN CERAMICS & PLASTICS, INC.
    Inventors: Peter R. Menge, Vladimir Ouspenski
  • Patent number: 10901099
    Abstract: A scintillation crystal can include a rare earth silicate, an activator, and a Group 2 co-dopant. In an embodiment, the Group 2 co-dopant concentration may not exceed 200 ppm atomic in the crystal or 0.25 at % in the melt before the crystal is formed. The ratio of the Group 2 concentration/activator atomic concentration can be in a range of 0.4 to 2.5. In another embodiment, the scintillation crystal may have a decay time no greater than 40 ns, and in another embodiment, have the same or higher light output than another crystal having the same composition except without the Group 2 co-dopant. In a further embodiment, a boule can be grown to a diameter of at least 75 mm and have no spiral or very low spiral and no cracks. The scintillation crystal can be used in a radiation detection apparatus and be coupled to a photosensor.
    Type: Grant
    Filed: February 28, 2020
    Date of Patent: January 26, 2021
    Assignee: SAINT-GOBAIN CRISTAUX & DETECTEURS
    Inventors: Samuel Blahuta, Vladimir Ouspenski
  • Publication number: 20200200924
    Abstract: A scintillation crystal can include a rare earth silicate, an activator, and a Group 2 co-dopant. In an embodiment, the Group 2 co-dopant concentration may not exceed 200 ppm atomic in the crystal or 0.25 at % in the melt before the crystal is formed. The ratio of the Group 2 concentration/activator atomic concentration can be in a range of 0.4 to 2.5. In another embodiment, the scintillation crystal may have a decay time no greater than 40 ns, and in another embodiment, have the same or higher light output than another crystal having the same composition except without the Group 2 co-dopant. In a further embodiment, a boule can be grown to a diameter of at least 75 mm and have no spiral or very low spiral and no cracks. The scintillation crystal can be used in a radiation detection apparatus and be coupled to a photosensor.
    Type: Application
    Filed: February 28, 2020
    Publication date: June 25, 2020
    Inventors: Samuel BLAHUTA, Vladimir OUSPENSKI
  • Patent number: 10647916
    Abstract: A scintillation compound can include a rare earth element that is in a divalent (RE2+) or a tetravalent state (RE4+). The scintillation compound can include another element to allow for better change balance. The other element may be a principal constituent of the scintillation compound or may be a dopant or a co-dopant. In an embodiment, a metal element in a trivalent state (M3+) may be replaced by RE4+ and a metal element in a divalent state (M2+). In another embodiment, M3+ may be replaced by RE2+ and M4+. In a further embodiment, M2+ may be replaced by a RE3+ and a metal element in a monovalent state (M1+). The metal element used for electronic charge balance may have a single valance state, rather than a plurality of valence states, to help reduce the likelihood that the valance state would change during formation of the scintillation compound.
    Type: Grant
    Filed: August 17, 2017
    Date of Patent: May 12, 2020
    Assignee: SAINT-GOBAIN CRISTAUX ET DETECTEURS
    Inventors: Samuel Blahuta, Vladimir Ouspenski
  • Patent number: 10613236
    Abstract: A scintillation crystal can include a rare earth silicate, an activator, and a Group 2 co-dopant. In an embodiment, the Group 2 co-dopant concentration may not exceed 200 ppm atomic in the crystal or 0.25 at in the melt before the crystal is formed. The ratio of the Group 2 concentration/activator atomic concentration can be in a range of 0.4 to 2.5. In another embodiment, the scintillation crystal may have a decay time no greater than 40 ns, and in another embodiment, have the same or higher light output than another crystal having the same composition except without the Group 2 co-dopant. In a further embodiment, a boule can be grown to a diameter of at least 75 mm and have no spiral or very low spiral and no cracks. The scintillation crystal can be used in a radiation detection apparatus and be coupled to a photosensor.
    Type: Grant
    Filed: March 8, 2019
    Date of Patent: April 7, 2020
    Assignee: SAINT-GOBAIN CRISTAUX & DETECTEURS
    Inventors: Samuel Blahuta, Vladimir Ouspenski
  • Patent number: 10598800
    Abstract: The present disclosure relates to a process for fabricating a crystalline scintillator material with a structure of elpasolite type of theoretical composition A2BC(1-y)MyX(6-y) wherein: A is chosen from among Cs, Rb, K, Na, B is chosen from among Li, K, Na, C is chosen from among the rare earths, Al, Ga, M is chosen from among the alkaline earths, X is chosen from among F, Cl, Br, I, y representing the atomic fraction of substitution of C by M and being in the range extending from 0 to 0.05, comprising its crystallization by cooling from a melt bath comprising r moles of A and s moles of B, the melt bath in contact with the material containing A and B in such a way that 2s/r is above 1. The process shows an improved fabrication yield. Moreover, the crystals obtained can have compositions closer to stoichiometry and have improved scintillation properties.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: March 24, 2020
    Assignee: Saint-Gobain Cristaux et Detecteurs
    Inventors: Vladimir Ouspenski, Samuel Blahuta, Raphaël Huchet, Julien Lejay
  • Publication number: 20200071611
    Abstract: A scintillation crystal can include Ln(1-y)REyX3, wherein Ln represents a rare earth element, RE represents a different rare earth element, y has a value in a range of 0 to 1, and X represents a halogen. In an embodiment, RE is Ce, and the scintillation crystal is doped with Sr, Ba, or a mixture thereof at a concentration of at least approximately 0.0002 wt. %. In another embodiment, the scintillation crystal can have unexpectedly improved linearity and unexpectedly improved energy resolution properties. In a further embodiment, a radiation detection system can include the scintillation crystal, a photosensor, and an electronics device. Such a radiation detection system can be useful in a variety of radiation imaging applications.
    Type: Application
    Filed: September 4, 2019
    Publication date: March 5, 2020
    Inventors: Peter R. MENGE, Vladimir OUSPENSKI
  • Patent number: 10442989
    Abstract: A scintillation crystal can include Ln(1-y)REyX3, wherein Ln represents a rare earth element, RE represents a different rare earth element, y has a value in a range of 0 to 1, and X represents a halogen. In an embodiment, RE is Ce, and the scintillation crystal is doped with Sr, Ba, or a mixture thereof at a concentration of at least approximately 0.0002 wt. %. In another embodiment, the scintillation crystal can have unexpectedly improved linearity and unexpectedly improved energy resolution properties. In a further embodiment, a radiation detection system can include the scintillation crystal, a photosensor, and an electronics device. Such a radiation detection system can be useful in a variety of radiation imaging applications.
    Type: Grant
    Filed: July 24, 2018
    Date of Patent: October 15, 2019
    Assignee: SAINT-GOBAIN CERAMICS & PLASTICS, INC.
    Inventors: Peter R. Menge, Vladimir Ouspenski
  • Publication number: 20190204458
    Abstract: A scintillation crystal can include a rare earth silicate, an activator, and a Group 2 co-dopant. In an embodiment, the Group 2 co-dopant concentration may not exceed 200 ppm atomic in the crystal or 0.25 at in the melt before the crystal is formed. The ratio of the Group 2 concentration/activator atomic concentration can be in a range of 0.4 to 2.5. In another embodiment, the scintillation crystal may have a decay time no greater than 40 ns, and in another embodiment, have the same or higher light output than another crystal having the same composition except without the Group 2 co-dopant. In a further embodiment, a boule can be grown to a diameter of at least 75 mm and have no spiral or very low spiral and no cracks. The scintillation crystal can be used in a radiation detection apparatus and be coupled to a photosensor.
    Type: Application
    Filed: March 8, 2019
    Publication date: July 4, 2019
    Inventors: Samuel Blahuta, Vladimir Ouspenski
  • Patent number: 10274616
    Abstract: A scintillation crystal can include a rare earth silicate, an activator, and a Group 2 co-dopant. In an embodiment, the Group 2 co-dopant concentration may not exceed 200 ppm atomic in the crystal or 0.25 at % in the melt before the crystal is formed. The ratio of the Group 2 concentration/activator atomic concentration can be in a range of 0.4 to 2.5. In another embodiment, the scintillation crystal may have a decay time no greater than 40 ns, and in another embodiment, have the same or higher light output than another crystal having the same composition except without the Group 2 co-dopant. In a further embodiment, a boule can be grown to a diameter of at least 75 mm and have no spiral or very low spiral and no cracks. The scintillation crystal can be used in a radiation detection apparatus and be coupled to a photosensor.
    Type: Grant
    Filed: February 18, 2016
    Date of Patent: April 30, 2019
    Assignee: SAINT-GOBAIN CRISTAUX & DETECTEURS
    Inventors: Samuel Blahuta, Vladimir Ouspenski
  • Publication number: 20190107636
    Abstract: The present disclosure relates to a process for fabricating a crystalline scintillator material with a structure of elpasolite type of theoretical composition A2BC(1-y)MyX(6-y) wherein: A is chosen from among Cs, Rb, K, Na, B is chosen from among Li, K, Na, C is chosen from among the rare earths, Al, Ga, M is chosen from among the alkaline earths, X is chosen from among F, Cl, Br, I, y representing the atomic fraction of substitution of C by M and being in the range extending from 0 to 0.05, comprising its crystallization by cooling from a melt bath comprising r moles of A and s moles of B, the melt bath in contact with the material containing A and B in such a way that 2s/r is above 1. The process shows an improved fabrication yield. Moreover, the crystals obtained can have compositions closer to stoichiometry and have improved scintillation properties.
    Type: Application
    Filed: November 30, 2018
    Publication date: April 11, 2019
    Inventors: Vladimir OUSPENSKI, Samuel BLAHUTA, Raphaël HUCHET, Julien LEJAY