Abstract: Methods and an apparatus for providing an intrinsically safe chamber door for a processing chamber capable of operating at high pressures are provided. One exemplary apparatus includes a processing chamber for a substrate where the chamber is configured to operate at a positive pressure. The processing chamber includes a port loading slot for providing access for the substrate into and out of the chamber. A chamber door positioned inside the chamber is included. The chamber door is configured to seal against an internal surface of the chamber thereby blocking access through the port loading slot. An internal pressure of the chamber assists in sealing the chamber door against the internal surface of the chamber. Also included is a door actuating mechanism configured to move the door along a door path where the door path is positioned at an angle to a path to be traversed by the substrate.

Abstract: Adherent matrix layers such as post-etch and other post-process residues are removed from a substrate by exposing them to a vapor phase solvent to allow penetration of the vapor phase solvent into the adherent matrix layers and condensing the vapor phase solvent into the adherent matrix layers and revaporized to promote fragmentation of the matrix and facilitate removal. Megasonic energy may be transmitted via a transmission member to the adherent matrix through the solvent condensed thereon to loosen fragments and particles. The substrate is typically rotated to improve contact between the megasonic energy transmission member and the condensed solvent and achieve more uniform cleaning. A co-solvent which is soluble in the vapor phase solvent may be added to enhance removal of specific adherent matrix materials.

Abstract: Adherent matrix layers such as post-etch and other post-process residues are removed from a substrate by exposing them to a vapor phase solvent to allow penetration of the vapor phase solvent into the adherent matrix layers and condensing the vapor phase solvent into the adherent matrix layers and revaporized to promote fragmentation of the matrix and facilitate removal. Megasonic energy may be transmitted via a transmission member to the adherent matrix through the solvent condensed thereon to loosen fragments and particles. The substrate is typically rotated to improve contact between the megasonic energy transmission member and the condensed solvent and achieve more uniform cleaning. A co-solvent which is soluble in the vapor phase solvent may be added to enhance removal of specific adherent matrix materials.

Abstract: A method for removing adherent matrices, such as highly cross-linked photoresist layers, from substrates, such as semiconductor wafers, comprises exposing the matrix to a vapor phase solvent and allowing the solvent to penetrate the matrix. After penetration, the vapor is condensed and then revaporized in order to promote fragmentation of the matrix and facilitate removal. Optionally, the matrix may be treated with a pre-swelling solvent and the resulting fragments removed by washing with a liquid or vapor solvent for the fragmented matrix material.

Abstract: In certain negative resists utilized for high-resolution lithography, cross-linking persists even after the exposing radiation is removed. This phenomenon causes exposed features to become enlarged. In accordance with the present invention, cross-linking in exposed resist regions is effectively quenched by purposely subjecting the exposed regions to oxygen immediately following exposure to cross-linking radiation. In, for example, full-field or step-and-repeat X-ray lithography, such quenching enables the consistent attainment of submicron features.