Patents by Inventor Vladimir Urazaev
Vladimir Urazaev has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9978932Abstract: Provided are semiconductor devices and methods of fabricating the same. The semiconductor device may include lower wires, upper wires crossing the lower wires, select elements provided at intersections between the lower and upper wires, and memory elements provided between the select elements and the upper wires. Each of the memory elements may include a lower electrode having a top width greater than a bottom width, and a data storage layer including a plurality of magnetic layers stacked on a top surface of the lower electrode and having a rounded edge.Type: GrantFiled: February 29, 2016Date of Patent: May 22, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyungjoon Kwon, Sechung Oh, Vladimir Urazaev, Ken Tokashiki, Jongchul Park, Gwang-Hyun Baek, Jaehun Seo, Sangmin Lee
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Patent number: 9685450Abstract: Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers.Type: GrantFiled: March 17, 2016Date of Patent: June 20, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Ki-Yeon Park, Jae-Hyoung Choi, Vladimir Urazaev, Jin-Ha Jeong
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Patent number: 9496488Abstract: Provided are semiconductor devices and methods of fabricating the same. The semiconductor device may include lower wires, upper wires crossing the lower wires, select elements provided at intersections between the lower and upper wires, and memory elements provided between the select elements and the upper wires. Each of the memory elements may include a lower electrode having a top width greater than a bottom width, and a data storage layer including a plurality of magnetic layers stacked on a top surface of the lower electrode and having a rounded edge.Type: GrantFiled: November 1, 2013Date of Patent: November 15, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyungjoon Kwon, Sechung Oh, Vladimir Urazaev, Ken Tokashiki, Jongchul Park, Gwang-Hyun Baek, Jaehun Seo, Sangmin Lee
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Publication number: 20160197081Abstract: Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers.Type: ApplicationFiled: March 17, 2016Publication date: July 7, 2016Inventors: Ki-Yeon Park, Jae-Hyoung CHOI, Vladimir URAZAEV, Jin-Ha JEONG
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Publication number: 20160181511Abstract: Provided are semiconductor devices and methods of fabricating the same. The semiconductor device may include lower wires, upper wires crossing the lower wires, select elements provided at intersections between the lower and upper wires, and memory elements provided between the select elements and the upper wires. Each of the memory elements may include a lower electrode having a top width greater than a bottom width, and a data storage layer including a plurality of magnetic layers stacked on a top surface of the lower electrode and having a rounded edge.Type: ApplicationFiled: February 29, 2016Publication date: June 23, 2016Inventors: HYUNGJOON KWON, SECHUNG OH, VLADIMIR URAZAEV, KEN TOKASHIKI, JONGCHUL PARK, Gwang-Hyun BAEK, Jaehun SEO, SANGMIN LEE
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Patent number: 9324781Abstract: Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers.Type: GrantFiled: May 11, 2015Date of Patent: April 26, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Ki-Yeon Park, Jae-Hyoung Choi, Vladimir Urazaev, Jin-Ha Jeong
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Publication number: 20150243727Abstract: Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers.Type: ApplicationFiled: May 11, 2015Publication date: August 27, 2015Inventors: Ki-Yeon Park, Jae-Hyoung Choi, Vladimir Urazaev, Jin-Ha Jeong
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Patent number: 9059331Abstract: Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers.Type: GrantFiled: February 28, 2014Date of Patent: June 16, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Ki-Yeon Park, Jae-Hyoung Choi, Vladimir Urazaev, Jin-Ha Jeong
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Patent number: 8946712Abstract: A light blocking member having variable transmittance, a display panel including the same, and a manufacturing method thereof. A light blocking member having a variable transmittance according to one exemplary embodiment includes a polymerizable compound, a binder, and a thermochromic material that exhibits a black color at a temperature below a threshold temperature and becomes transparent at a temperature above the threshold temperature.Type: GrantFiled: August 15, 2012Date of Patent: February 3, 2015Assignee: Samsung Display Co., Ltd.Inventors: Byung-Duk Yang, Vladimir Urazaev, Sung-Wook Kang
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Patent number: 8927367Abstract: A method of fabricating a semiconductor device may include patterning a substrate to form trenches, forming a sacrificial layer to cover inner surfaces of the trenches, the sacrificial layer having a single-layered structure, forming sacrificial patterns by isotropically etching the sacrificial layer such that the sacrificial layer remains on bottom surfaces of the trenches, forming lightly doped regions in sidewalls of the trenches using the sacrificial patterns as an ion mask, removing the sacrificial patterns, and sequentially forming a gate insulating layer and a gate electrode layer in the trenches.Type: GrantFiled: January 8, 2013Date of Patent: January 6, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Yongsang Jeong, Vladimir Urazaev, Jin Ha Jeong, Changhun Lee
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Publication number: 20140256112Abstract: Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers.Type: ApplicationFiled: February 28, 2014Publication date: September 11, 2014Inventors: Ki-Yeon Park, Jae-Hyoung Choi, Vladimir Urazaev, Jin-Ha Jeong
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Patent number: 8809943Abstract: A three dimensional semiconductor memory device includes an electrode structure having a plurality of conductive electrode patterns and insulating patterns alternatingly stacked on a substrate. Opposite sidewalls of the electrode structure include respective grooves therein extending in a direction substantially perpendicular to the substrate. First and second active patterns protrude from the substrate and extend within the grooves in the opposite sidewalls of the electrode structure, respectively. Respective data storing layers extend in the grooves between the conductive electrode patterns of the electrode structure and sidewalls of the first and second active patterns adjacent thereto. Related fabrication methods are also discussed.Type: GrantFiled: April 26, 2012Date of Patent: August 19, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Jin-Soo Lim, Vladimir Urazaev, Jin Ha Jeong, Hansoo Kim, Heayun Lee
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Publication number: 20140124881Abstract: Provided are semiconductor devices and methods of fabricating the same. The semiconductor device may include lower wires, upper wires crossing the lower wires, select elements provided at intersections between the lower and upper wires, and memory elements provided between the select elements and the upper wires. Each of the memory elements may include a lower electrode having a top width greater than a bottom width, and a data storage layer including a plurality of magnetic layers stacked on a top surface of the lower electrode and having a rounded edge.Type: ApplicationFiled: November 1, 2013Publication date: May 8, 2014Inventors: HYUNGJOON KWON, SECHUNG OH, VLADIMIR URAZAEV, KEN TOKASHIKI, JONGCHUL PARK, Gwang-Hyun BAEK, Jaehun SEO, SANGMIN LEE
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Patent number: 8563951Abstract: Exposure systems include a beam generator, which is configured to irradiate source beams in a direction of an object to be exposed by the source beams, along with first and second beam shapers. The first beam shaper, which is disposed proximate the beam generator, has a first aperture therein positioned to pass through the source beams received from the beam generator. The second beam shaper is disposed proximate the first beam shaper. The second beam shaper includes a plate having a second aperture therein, which is positioned to receive the source beams that are passed through the first aperture of the first beam shaper. The second beam shaper further includes a first actuator and a first shift screen mechanically coupled to the first actuator.Type: GrantFiled: March 14, 2012Date of Patent: October 22, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Jin Choi, Jin-Ha Jeong, Vladimir Urazaev, Hea-Yun Lee
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Publication number: 20120322182Abstract: A light blocking member having variable transmittance, a display panel including the same, and a manufacturing method thereof. A light blocking member having a variable transmittance according to one exemplary embodiment includes a polymerizable compound, a binder, and a thermochromic material that exhibits a black color at a temperature below a threshold temperature and becomes transparent at a temperature above the threshold temperature.Type: ApplicationFiled: August 15, 2012Publication date: December 20, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Byung-Duk YANG, Vladimir URAZAEV, Sung-Wook KANG
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Publication number: 20120292535Abstract: Exposure systems include a beam generator, which is configured to irradiate source beams in a direction of an object to be exposed by the source beams, along with first and second beam shapers. The first beam shaper, which is disposed proximate the beam generator, has a first aperture therein positioned to pass through the source beams received from the beam generator. The second beam shaper is disposed proximate the first beam shaper. The second beam shaper includes a plate having a second aperture therein, which is positioned to receive the source beams that are passed through the first aperture of the first beam shaper. The second beam shaper further includes a first actuator and a first shift screen mechanically coupled to the first actuator.Type: ApplicationFiled: March 14, 2012Publication date: November 22, 2012Inventors: Jin Choi, Jin-Ha Jeong, Vladimir Urazaev, Hea-Yun Lee
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Publication number: 20120273872Abstract: A three dimensional semiconductor memory device includes an electrode structure having a plurality of conductive electrode patterns and insulating patterns alternatingly stacked on a substrate. Opposite sidewalls of the electrode structure include respective grooves therein extending in a direction substantially perpendicular to the substrate. First and second active patterns protrude from the substrate and extend within the grooves in the opposite sidewalls of the electrode structure, respectively. Respective data storing layers extend in the grooves between the conductive electrode patterns of the electrode structure and sidewalls of the first and second active patterns adjacent thereto. Related fabrication methods are also discussed.Type: ApplicationFiled: April 26, 2012Publication date: November 1, 2012Inventors: Jin-Soo Lim, Vladimir Urazaev, Jin Ha Jeong, Hansoo Kim, Heayun Lee
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Patent number: 8268412Abstract: A light blocking member having variable transmittance, a display panel including the same, and a manufacturing method thereof. A light blocking member having a variable transmittance according to one exemplary embodiment includes a polymerizable compound, a binder, and a thermochromic material that exhibits a black color at a temperature below a threshold temperature and becomes transparent at a temperature above the threshold temperature.Type: GrantFiled: May 19, 2009Date of Patent: September 18, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Byung-Duk Yang, Vladimir Urazaev, Sung-Wook Kang
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Patent number: 8236673Abstract: A method of fabricating a vertical NAND semiconductor device can include changing a phase of a first preliminary semiconductor layer in an opening from solid to liquid to form a first single crystalline semiconductor layer in the opening and then forming a second preliminary semiconductor layer on the first single crystalline semiconductor layer. The phase of the second preliminary semiconductor layer is changed from solid to liquid to form a second single crystalline semiconductor layer that combines with the first single crystalline semiconductor layers to form a single crystalline semiconductor layer in the opening.Type: GrantFiled: February 10, 2011Date of Patent: August 7, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Yong-hoon Son, Jin-ha Jeong, Jung-ho Kim, Vladimir Urazaev, Jong-hyuk Kang, Sung-woo Hyun
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Publication number: 20120048356Abstract: A doping paste includes an inorganic particle including a phosphorus-containing silicon compound and an organic vehicle, wherein a concentration of phosphorus at an interior portion of the inorganic particle is greater than a concentration of phosphorous at a surface of the inorganic particle.Type: ApplicationFiled: February 28, 2011Publication date: March 1, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang-Soo JEE, Eun-Sung LEE, Se-Yun KIM, Vladimir URAZAEV, Jung Yun WON, Mi-Jeong SONG