Abstract: Methods of solder bonding sputter targets to backing plate members and solder bonded target/backing plate assemblies are disclosed wherein a gallium containing solder paste is used to bond adjoining target and backing plate surfaces. This paste comprises a gallium or gallium alloy liquid component and a finely divided solid solution component comprising at least one metal from groups IB, VIII, and IVB of the periodic chart and at least one metal from groups IVA, IIIA and VA of the periodic chart. The solder paste is applied to the surfaces to be soldered and is allowed to solidify. A durable solder bond is formed that is capable of withstanding high temperatures on the order of about 500.degree. C. without failure.

Abstract: Methods of solder bonding sputter targets to backing plate members and solder bonded target/backing plate assemblies are available wherein a solder paste is used to bond adjoining target and backing plate surfaces. This paste comprises a low melting point metal component having a melting point of about 70.degree. C. or less and a finely divided solid solution component comprising at least one metal from groups IB, VIII, and IVB of the periodic chart and at least one metal from groups IVA, IIIA and VA of the periodic chart. The solder paste is applied to the surfaces to be soldered and is allowed to solidify. A durable solder bond is formed that is capable of withstanding high temperatures on the order of about 500.degree. C. without failure.

Abstract: Methods for facilitating recycling of backing plates in bonded target/backing plate assemblies and structural assemblies for use in these methods are disclosed. The target and backing plate are joined by a solder paste material that may be applied to adjoining surfaces of the target and backing plate at low temperature. The paste solidifies to have a high decomposition temperature on the order of greater than 400.degree. C. Provision of a solder layer having a liquidus temperature of about 100.degree.-250.degree. C. between the backing plate and solder paste allows for easy target and backing plate separation and subsequent backing plate reusage.

Abstract: A centrifugal mill having a feeder secured on a housing, the working surface of which has ribs and which accommodates a separator mounted on a shaft and arranged coaxially inside the housing to define an annular clearance with the working surface of the housing and having a cavity and a plurality of through holes in a side wall and balls placed in the cavity of the separator, some of the balls interacting during rotation of the separator with the ribs of the housing via the through holes in the side wall of the separator, the cavity of the separator accommodating a baffle defining with the separator an annular clearance of between 0.1 and 1.0 times the diameter of the ball, the annular clearance between the separator and working surface of the housing amounting to between 0.1 and 0.5 times the diameter of the ball, whereas the through holes in the separator have the form of slots.

Abstract: A characteristic feature of the design are the rounded off peripheral portions of surfaces of discs which face each other and are spaced equidistantly apart, the discs being rigidly attached to a power-driven rotor.

Abstract: A solution for electrochemical metallization of dielectrics comprising a salt of copper, a phosphorus-containing salt, a stabilizing agent and water which contains, as the phosphorus-containing salt, a salt of hypophosphorous acid, the components being employed in the following proportions, g/l:copper salt: 35 to 350hypophosphorous acid salt: 35 to 400stabilizing agent: 0.004 to 250water: up to 1 liter.A process for electrochemical metallization of dielectrics involving preparation of the dielectric surface, formation of a current-conducting layer thereon, electrochemical building-up of a metal coating, characterized in that the dielectric surface activation and formation of a current-conducting layer on this surface are effected simultaneously by wetting the dielectric surface with the above-specified solution, followed by a heat-treatment at a temperature within the range of from 80.degree. to 350.degree. C.