Patents by Inventor Vladimir V. Fedorov
Vladimir V. Fedorov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10207247Abstract: A device for heat, mass, and chemical exchange and interaction between gases and liquids. Nozzles feed the gas at angles in different directions to form a gas-liquid mix, swirls, and/or foam above an array of such nozzles.Type: GrantFiled: May 21, 2014Date of Patent: February 19, 2019Inventor: Vladimir V. Fedorov
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Patent number: 10027085Abstract: A Q-switched laser includes a laser cavity including a cavity mirror and an output coupler mirror. The Q-switched laser also includes a doped laser gain material disposed in the laser cavity and a Q-switch including a saturable absorber comprising Fe2+:ZnSe or Fe2+:ZnS.Type: GrantFiled: June 14, 2016Date of Patent: July 17, 2018Assignee: The UAB Research FoundationInventors: Sergey B. Mirov, Andrew Gallian, Alan Martinez, Vladimir V. Fedorov
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Publication number: 20180175579Abstract: A method of performing spatial separation of different wavelengths in a single laser cavity includes generating, from a pump radiation source, pump radiations in spatially separate channels and focusing the generated pump radiations in the spatially separate channels towards an active gain medium having amplification spectra. The method also includes emitting from the active gain medium, amplified radiations of the spatially separate channels, each channel of the spatially separate channels representing a corresponding wavelength and focusing the emitted amplified radiations of the spatially separated channels towards an aperture.Type: ApplicationFiled: January 30, 2018Publication date: June 21, 2018Inventors: Sergey B. Mirov, Vladimir V. Fedorov
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Patent number: 9887510Abstract: A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Cr2+ thin film of controllable thickness on the ZnS crystal facets after crystal growth by means of pulse laser deposition or plasma sputtering, thermal annealing of the crystals for effective thermal diffusion of the dopant into the crystal volume with a temperature and exposition time providing the highest concentration of the dopant in the volume without degrading laser performance due to scattering and concentration quenching, and formation of a microchip laser either by means of direct deposition of mirrors on flat and parallel polished facets of a thin Cr:ZnS wafer or by relying on the internal reflectance of such facets.Type: GrantFiled: July 1, 2014Date of Patent: February 6, 2018Assignee: The UAB Research FoundationInventors: Sergey B. Mirov, Vladimir V. Fedorov
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Publication number: 20160294151Abstract: A Q-switched laser includes a laser cavity including a cavity mirror and an output coupler mirror. The Q-switched laser also includes a doped laser gain material disposed in the laser cavity and a Q-switch including a saturable absorber comprising Fe2+:ZnSe or Fe2+:ZnS.Type: ApplicationFiled: June 14, 2016Publication date: October 6, 2016Applicant: The UAB Research FoundationInventors: Sergey B. Mirov, Andrew Gallian, Alan Martinez, Vladimir V. Fedorov
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Patent number: 9391424Abstract: This disclosure demonstrates successfully using single, polycrystalline, hot pressed ceramic, and thin film Fe doped binary chalcogenides (such as ZnSe and ZnS) as saturable absorbing passive Q-switches. The method of producing polycrystalline ZnSe(S) yields fairly uniform distribution of dopant, large coefficients of absorption (5-50 cm?1) and low passive losses while being highly cost effective and easy to reproduce. Using these Fe2+:ZnSe crystals, stable Q-switched output was achieved with a low threshold and the best cavity configuration yielded 13 mJ/pulse single mode Q-switched output and 85 mJ in a multipulse regime.Type: GrantFiled: August 26, 2014Date of Patent: July 12, 2016Assignee: THE UAB RESEARCH FOUNDATIONInventors: Sergey B. Mirov, Andrew Gallian, Alan Martinez, Vladimir V. Fedorov
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Publication number: 20150333470Abstract: A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Cr2+ thin film of controllable thickness on the ZnS crystal facets after crystal growth by means of pulse laser deposition or plasma sputtering, thermal annealing of the crystals for effective thermal diffusion of the dopant into the crystal volume with a temperature and exposition time providing the highest concentration of the dopant in the volume without degrading laser performance due to scattering and concentration quenching, and formation of a microchip laser either by means of direct deposition of mirrors on flat and parallel polished facets of a thin Cr:ZnS wafer or by relying on the internal reflectance of such facets.Type: ApplicationFiled: July 1, 2014Publication date: November 19, 2015Applicant: The UAB Research FoundationInventors: Sergey B. Mirov, Vladimir V. Fedorov
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Publication number: 20150125351Abstract: A device for heat, mass, and chemical exchange and interaction between gases and liquids. Nozzles feed the gas at angles in different directions to form a gas-liquid mix, swirls, and/or foam above an array of such nozzles.Type: ApplicationFiled: May 21, 2014Publication date: May 7, 2015Inventor: Vladimir V. Fedorov
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Publication number: 20140362879Abstract: This disclosure demonstrates successfully using single, polycrystalline, hot pressed ceramic, and thin film Fe doped binary chalcogenides (such as ZnSe and ZnS) as saturable absorbing passive Q-switches. The method of producing polycrystalline ZnSe(S) yields fairly uniform distribution of dopant, large coefficients of absorption (5-50 cm?1) and low passive losses while being highly cost effective and easy to reproduce. Using these Fe2+:ZnSe crystals, stable Q-switched output was achieved with a low threshold and the best cavity configuration yielded 13 mJ/pulse single mode Q-switched output and 85 mJ in a multipulse regime.Type: ApplicationFiled: August 26, 2014Publication date: December 11, 2014Applicant: The UAB Research FoundationInventors: Sergey B. Mirov, Andrew Gallian, Alan Martinez, Vladimir V. Fedorov
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Publication number: 20140348200Abstract: Volumetric Bragg grating devices that operate in middle-infrared region of the spectrum and methods for producing such devices are described. Such a Volumetric Bragg grating device can be produced by forming a plurality of color centers within an alkali-halide crystal and selectively removing a subset of the plurality of color centers to produce variations in refractive index of the alkali-halide crystal in the middle-infrared spectral region and to thereby produce a volumetric Bragg grating that operates in middle-infrared spectral range.Type: ApplicationFiled: January 14, 2013Publication date: November 27, 2014Inventors: Anitha Arumugam, Dmitry V. Martyshkin, Vladimir V. Fedorov, David J. Hilton, Sergey B. Mirov
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Publication number: 20140321494Abstract: Volumetric Bragg grating devices that operate in middle-infrared region of the spectrum and methods for producing such devices are described. Such a Volumetric Bragg grating device can be produced by forming a plurality of color centers within an alkali-halide or an alkali-earth fluoride crystal and selectively removing a subset of the plurality of color centers to produce variations in refractive index of the alkali-halide or alkali-earth fluoride crystal in the middle-infrared spectral region and to thereby produce a volumetric Bragg grating that operates in middle-infrared spectral range.Type: ApplicationFiled: July 14, 2014Publication date: October 30, 2014Inventors: Anitha Arumugam, Dmitry V. Martyshkin, Vladimir V. Fedorov, David J. Hilton, Sergey B. Mirov
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Patent number: 8767789Abstract: A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Cr2+ thin film of controllable thickness on the ZnS crystal facets after crystal growth by means of pulse laser deposition or plasma sputtering, thermal annealing of the crystals for effective thermal diffusion of the dopant into the crystal volume with a temperature and exposition time providing the highest concentration of the dopant in the volume without degrading laser performance due to scattering and concentration quenching, and formation of a microchip laser either by means of direct deposition of mirrors on flat and parallel polished facets of a thin Cr:ZnS wafer or by relying on the internal reflectance of such facets. Multiple applications of the laser material are contemplated in the invention.Type: GrantFiled: December 1, 2011Date of Patent: July 1, 2014Assignee: The UAB Research FoundationInventors: Sergey B. Mirov, Vladimir V. Fedorov
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Patent number: 8284805Abstract: Electrically pumped mid-IR semiconductor lasers that are operable at room temperature and possess a range of tunability up to 1100 nm, which constitutes a revolutionary (1-2 orders of magnitude) improvement in the range of tunability over existing semiconductor laser technology utilizing Doped quantum confined host material (DQCH) with characteristic spatial dimension of the confinement tuned to enable the overlap of the discrete levels of the host and impurity ions and efficient energy transfer from the separated host carriers to the impurity, wherein: said DQCH material has the formula TM:MeZ and/or MeX2Z4, wherein Me is selected from the group consisting of Zn, Cd, Ca, Mg, Sr, Ba, Hg, Pb, Cu, Al, Ga, In; Z is selected from the group consisting of S, Se, Te, O, N, P, As, Sb and their mixtures; X being selected from the group consisting of Ga, In, and Al; and TM is selected from the group consisting from V, Cr, Mn, Fe, Co, and Ni.Type: GrantFiled: March 12, 2007Date of Patent: October 9, 2012Assignee: The UAB Research FoundationInventors: Sergey B. Mirov, Vladimir V. Fedorov, Dmitri Martyshkin
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Publication number: 20120224599Abstract: A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Cr2+ thin film of controllable thickness on the ZnS crystal facets after crystal growth by means of pulse laser deposition or plasma sputtering, thermal annealing of the crystals for effective thermal diffusion of the dopant into the crystal volume with a temperature and exposition time providing the highest concentration of the dopant in the volume without degrading laser performance due to scattering and concentration quenching, and formation of a microchip laser either by means of direct deposition of mirrors on flat and parallel polished facets of a thin Cr:ZnS wafer or by relying on the internal reflectance of such facets. Multiple applications of the laser material are contemplated in the invention.Type: ApplicationFiled: December 1, 2011Publication date: September 6, 2012Applicant: The UAB Research FoundationInventors: Sergey B. Mirov, Vladimir V. Fedorov
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Patent number: 8233508Abstract: An optical nose for detecting the presence of molecular contaminants in gaseous samples utilizes a tunable seed laser output in conjunction with a pulsed reference laser output to generate a mid-range IR laser output in the 2 to 20 micrometer range for use as a discriminating light source in a photo-acoustic gas analyzer.Type: GrantFiled: October 20, 2009Date of Patent: July 31, 2012Assignee: The UAB Research FoundationInventors: Sergey B. Mirov, Vladimir V. Fedorov, Igor Moskalev
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Publication number: 20100246610Abstract: An optical nose for detecting the presence of molecular contaminants in gaseous samples utilizes a tunable seed laser output in conjunction with a pulsed reference laser output to generate a mid-range IR laser output in the 2 to 20 micrometer range for use as a discriminating light source in a photo-acoustic gas analyzer.Type: ApplicationFiled: October 20, 2009Publication date: September 30, 2010Applicant: THE UAB RESEARCH FOUNDATIONInventors: Sergey B. Mirov, Vladimir V. Fedorov, Igor Moskalev
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Publication number: 20100022049Abstract: A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Cr2+ thin film of controllable thickness on the ZnS crystal facets after crystal growth by means of pulse laser deposition or plasma sputtering, thermal annealing of the crystals for effective thermal diffusion of the dopant into the crystal volume with a temperature and exposition time providing the highest concentration of the dopant in the volume without degrading laser performance due to scattering and concentration quenching, and formation of a microchip laser either by means of direct deposition of mirrors on flat and parallel polished facets of a thin Cr:ZnS wafer or by relying on the internal reflectance of such facets.Type: ApplicationFiled: June 16, 2009Publication date: January 28, 2010Inventors: Sergey B. Mirov, Vladimir V. Fedorov
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Publication number: 20090304034Abstract: Electrically pumped mid-IR semiconductor lasers that are operable at room temperature and possess a range of tunability up to 1100 nm, which constitutes a revolutionary (1-2 orders of magnitude) improvement in the range of tunability over existing semiconductor laser technology utilizing Doped quantum confined host material (DQCH) with characteristic spatial dimension of the confinement tuned to enable the overlap of the discrete levels of the host and impurity ions and efficient energy transfer from the separated host carriers to the impurity, wherein: said DQCH material has the formula TM:MeZ and/or MeX2Z4, wherein Me is selected from the group consisting of Zn, Cd, Ca, Mg, Sr, Ba, Hg, Pb, Cu, Al, Ga, In; Z is selected from the group consisting of S, Se, Te, O, N, P, As, Sb and their mixtures; X being selected from the group consisting of Ga, In, and Al; and TM is selected from the group consisting from V, Cr, Mn, Fe, Co, and Ni.Type: ApplicationFiled: March 12, 2007Publication date: December 10, 2009Inventors: Sergey B. Mirov, Vladimir V. Fedorov, Dmitri Martyshkin
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Patent number: 6960486Abstract: A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Cr2+ thin film of controllable thickness on the ZnS crystal facets after crystal growth by means of pulse laser deposition or plasma sputtering, thermal annealing of the crystals for effective thermal diffusion of the dopant into the crystal volume with a temperature and exposition time providing the highest concentration of the dopant in the volume without degrading laser performance due to scattering and concentration quenching, and formation of a microchip laser either by means of direct deposition of mirrors on flat and parallel polished facets of a thin Cr:ZnS wafer or by relying on the internal reflectance of such facets.Type: GrantFiled: September 19, 2002Date of Patent: November 1, 2005Assignee: University of Alabama at Brimingham Research FoundationInventors: Sergey B. Mirov, Vladimir V. Fedorov
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Publication number: 20030072340Abstract: A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Cr2+ thin film of controllable thickness on the ZnS crystal facets after crystal growth by means of pulse laser deposition or plasma sputtering, thermal annealing of the crystals for effective thermal diffusion of the dopant into the crystal volume with a temperature and exposition time providing the highest concentration of the dopant in the volume without degrading laser performance due to scattering and concentration quenching, and formation of a microchip laser either by means of direct deposition of mirrors on flat and parallel polished facets of a thin Cr:ZnS wafer or by relying on the internal reflectance of such facets.Type: ApplicationFiled: September 19, 2002Publication date: April 17, 2003Inventors: Sergey B. Mirov, Vladimir V. Fedorov