Patents by Inventor Vladimir V. Makarov

Vladimir V. Makarov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8894828
    Abstract: Etch assisting agents for focused ion beam (FIB) etching of copper for circuit editing of integrated circuits both prevent loss of adjacent dielectric due to sputtering by the ion beam, and render sputtered re-deposited copper on adjacent surfaces non-conductive to avoid electrical short circuits. The agents are characterized by having an N—N (N being Nitrogen) bonding in their molecules and boiling points between about 70° C. and about 220° C., and include hydrazine and water solutions, hydrazine derivatives, NitrosAmine derivatives saturated with two hydrocarbon groups selected from Methyl, Ethyl, Propyl and Butyl, NitrosAmine related compounds, and Nitrogen Tetroxide. Preferred agents are Hydrazine monohydrate (HMH), HydroxyEthylHydrazine (HEH), CEH, BocMH, BocMEH, NDMA, NDEA, NMEA, NMPA, NEPA, NDPA, NMBA, NEBA, NPYR, NPIP, NMOR and Carmustine, alone or in combination with Nitrogen Tetroxide. The agents are effective for etching copper in high aspect ratio (deep) holes.
    Type: Grant
    Filed: August 24, 2010
    Date of Patent: November 25, 2014
    Assignee: Tiza Lab, LLC
    Inventor: Vladimir V. Makarov
  • Publication number: 20140240343
    Abstract: A system and method for controlling color selection in a graphics application program is disclosed. The method includes the steps of connecting a vision system to the computer, wherein the vision system is adapted to monitor a visual space. The method further includes the step of detecting, by the vision system, a tracking object in the visual space. The method further includes the step of executing a graphics application program by the computer, and outputting, by the vision system to the computer, spatial coordinate data representative of the location of the tracking object within the visual space. The method further includes the steps of mapping the spatial coordinate data to respective components of a graphic color model, and displaying the graphic color model on a display connected to the computer.
    Type: Application
    Filed: February 22, 2013
    Publication date: August 28, 2014
    Applicant: Corel Corporation
    Inventors: Christopher J. Tremblay, Stephen P. Bolt, Vladimir V. Makarov, Jeremy D. Sutton
  • Patent number: 8674321
    Abstract: The present invention provides a method of obtaining a bright source of ions with narrow energy spread for focused ion beam applications using micro plasmas. As a preferred embodiment, a high pressure microplasma source operating in a normal glow discharge regime is used to produce a cold bright focused beam of Xe+ and/or Xe2+ ions having ion temperature of the order of 0.5-1 eV and a current density on the order of 0.1-1 A/cm2 or higher.
    Type: Grant
    Filed: May 22, 2012
    Date of Patent: March 18, 2014
    Assignee: Tiza Lab, L.L.C.
    Inventors: Vladimir V. Makarov, Sergey Macheret
  • Publication number: 20130221232
    Abstract: The present invention provides a method of obtaining a bright source of ions with narrow energy spread for focused ion beam applications using micro plasmas. As a preferred embodiment, a high pressure microplasma source operating in a normal glow discharge regime is used to produce a cold bright focused beam of Xe+ and/or Xe2+ ions having ion temperature of the order of 0.5-1 eV and a current density on the order of 0.1-1 A/cm2 or higher.
    Type: Application
    Filed: May 22, 2012
    Publication date: August 29, 2013
    Inventors: Vladimir V. Makarov, Sergey Macheret
  • Patent number: 8481966
    Abstract: A high pressure microplasma source operating in a normal glow discharge regime is used to produce a cold bright focused beam of Xe+ and/or Xe2+ ions having ion temperature of the order of 0.5-1 eV and a current density on the order of 0.1-1 A/cm2 or higher for focused ion beam applications.
    Type: Grant
    Filed: February 28, 2012
    Date of Patent: July 9, 2013
    Assignee: Tiza Lab, L.L.C.
    Inventors: Vladimir V. Makarov, Sergey Macheret
  • Patent number: 8277672
    Abstract: Silicon, silicon dielectrics and low-k dielectrics are etched in a focused ion beam process using gaseous fluorinating etchants selected from the group of triethylamine trihydrofluoride (TEATHF) and xenon fluoride. Xenon fluoride is combined with a secondary protecting agent to avoid undesired corrosion of bare silicon. The protecting agent may be an oxidizing agent such as oxygen, perfluorotripentylamine (PFTPA), or a heavy completely fluorinated hydrocarbon.
    Type: Grant
    Filed: April 17, 2009
    Date of Patent: October 2, 2012
    Assignee: Tiza Lab, LLC
    Inventor: Vladimir V. Makarov
  • Publication number: 20120211356
    Abstract: Etch assisting agents for focused ion beam (FIB) etching of copper for circuit editing of integrated circuits both prevent loss of adjacent dielectric due to sputtering by the ion beam, and render sputtered re-deposited copper on adjacent surfaces non-conductive to avoid electrical short circuits. The agents are characterized by having an N—N (N being Nitrogen) bonding in their molecules and boiling points between about 70° C. and about 220° C., and include hydrazine and water solutions, hydrazine derivatives, NitrosAmine derivatives saturated with two hydrocarbon groups selected from Methyl, Ethyl, Propyl and Butyl, NitrosAmine related compounds, and Nitrogen Tetroxide. Preferred agents are Hydrazine monohydrate (HMH), HydroxyEthylHydrazine (HEH), CEH, BocMH, BocMEH, NDMA, NDEA, NMEA, NMPA, NEPA, NDPA, NMBA, NEBA, NPYR, NPIP, NMOR and Carmustine, alone or in combination with Nitrogen Tetroxide. The agents are effective for etching copper in high aspect ratio (deep) holes.
    Type: Application
    Filed: August 24, 2010
    Publication date: August 23, 2012
    Inventor: Vladimir V. Makarov
  • Publication number: 20110048929
    Abstract: Etch assisting agents for focused ion beam (FIB) etching of copper for circuit editing of integrated circuits both prevent loss of adjacent dielectric due to sputtering by the ion beam, and render sputtered re-deposited copper on adjacent surfaces non-conductive to avoid electrical short circuits. The agents comprise hydrazine and hydrazine derivatives compounds having an N—N (N being Nitrogen) bonding in their molecules, and boiling points between about 70° and 200° C. Preferred agents are either Hydrazine monohydrate or Nitrosodimethylamine, alone or in combination with Nitrogen Tetroxide, and are effective for etching copper in high aspect ratio (deep) holes.
    Type: Application
    Filed: August 25, 2009
    Publication date: March 3, 2011
    Inventor: Vladimir V. Makarov
  • Publication number: 20110048931
    Abstract: Etch assisting agents for focused ion beam (FIB) etching of copper for circuit editing of integrated circuits both prevent loss of adjacent dielectric due to sputtering by the ion beam, and render sputtered re-deposited copper on adjacent surfaces non-conductive to avoid electrical short circuits. The agents comprise hydrazine and hydrazine derivatives having an N—N(N being Nitrogen) bonding in their molecules and boiling points between about 70° and 220° C., and NitrosAmine derivatives saturated with two hydrocarbon groups selected from Methyl, Ethyl, Propyl and Butyl. Preferred agents are Hydrazine monohydrate (HMH), HydroxyEthylHydrazine (HEH), NDMA, NMEA, NDEA, NMPA, NEPA, NDPA, NMBA or NEBA, alone or in combination with Nitrogen Tetroxide. The agents are effective for etching copper in high aspect ratio (deep) holes.
    Type: Application
    Filed: March 18, 2010
    Publication date: March 3, 2011
    Inventor: Vladimir V. Makarov
  • Patent number: 7883630
    Abstract: Apparatus and processes are disclosed for milling copper adjacent to organic low-k dielectric on a substrate by directing a charged-particle beam at a portion of the copper and exposing the copper to a precursor sufficient to enhance removal of the copper relative to removal of the dielectric, wherein the precursor contains an oxidizing agent, has a high sticking coefficient and a long residence time on the copper, contains atoms of at least one of carbon and silicon in amount sufficient to stop oxidation of the dielectric, and contains no atoms of chlorine, bromine or iodine. In one embodiment, the precursor comprises at least one of the group consisting of NitroEthanol, NitroEthane, NitroPropane, NitroMethane, compounds based on silazane such as HexaMethylCycloTriSilazane, and compounds based on siloxane such as Octa-Methyl-Cyclo-Tetra-Siloxane. Products of the processes are also disclosed.
    Type: Grant
    Filed: September 26, 2008
    Date of Patent: February 8, 2011
    Assignee: DCG Systems, Inc.
    Inventors: Vladimir V. Makarov, Theodore R. Lundquist
  • Publication number: 20100264111
    Abstract: Silicon, silicon dielectrics and low-k dielectrics are etched in a focused ion beam process using gaseous fluorinating etchants selected from the group of triethylamine trihydrofluoride (TEATHF) and xenon fluoride. Xenon fluoride is combined with a secondary protecting agent to avoid undesired corrosion of bare silicon. The protecting agent may be an oxidizing agent such as oxygen, perfluorotripentylamine (PFTPA), or a heavy completely fluorinated hydrocarbon.
    Type: Application
    Filed: April 17, 2009
    Publication date: October 21, 2010
    Inventor: Vladimir V. Makarov
  • Publication number: 20090114851
    Abstract: Apparatus and processes are disclosed for milling copper adjacent to organic low-k dielectric on a substrate by directing a charged-particle beam at a portion of the copper and exposing the copper to a precursor sufficient to enhance removal of the copper relative to removal of the dielectric, wherein the precursor contains an oxidizing agent, has a high sticking coefficient and a long residence time on the copper, contains atoms of at least one of carbon and silicon in amount sufficient to stop oxidation of the dielectric, and contains no atoms of chlorine, bromine or iodine. In one embodiment, the precursor comprises at least one of the group consisting of NitroEthanol, NitroEthane, NitroPropane, NitroMethane, compounds based on silazane such as HexaMethylCycloTriSilazane, and compounds based on siloxane such as Octa-Methyl-Cyclo-Tetra-Siloxane. Products of the processes are also disclosed.
    Type: Application
    Filed: September 26, 2008
    Publication date: May 7, 2009
    Inventors: Vladimir V. Makarov, Theodore R. Lundquist
  • Patent number: 7060196
    Abstract: Apparatus and processes are disclosed for milling copper adjacent to organic low-k dielectric on a substrate by directing a charged-particle beam at a portion of the copper and exposing the copper to a precursor sufficient to enhance removal of the copper relative to removal of the dielectric, wherein the precursor contains an oxidizing agent, has a high sticking coefficient and a long residence time on the copper, contains atoms of at least one of carbon and silicon in amount sufficient to stop oxidation of the dielectric, and contains no atoms of chlorine, bromine or iodine. In one embodiment, the precursor comprises at least one of the group consisting of NitroEthanol, NitroEthane, NitroPropane, NitroMethane, compounds based on silazane such as HexaMethylCycloTriSilazane, and compounds based on siloxane such as Octa-Methyl-Cyclo-Tetra-Siloxane. Products of the processes are also disclosed.
    Type: Grant
    Filed: October 3, 2003
    Date of Patent: June 13, 2006
    Assignee: Credence Systems Corporation
    Inventors: Vladimir V. Makarov, Theodore R. Lundquist
  • Patent number: 6824655
    Abstract: A micro-machining process that includes etching a substrate having copper overlying a dielectric layer to a charged particle beam in the presence of an etch assisting agent. The etch assisting agent is selected from the group consisting of ammonia, acetic acid, thiolacetic acid, and combinations thereof.
    Type: Grant
    Filed: August 26, 2002
    Date of Patent: November 30, 2004
    Assignee: Credence Systems Corporation
    Inventors: Vladimir V. Makarov, Javier Fernandez Ruiz, Tzong-Tsong Miau
  • Publication number: 20040084408
    Abstract: A method for surface preparation of a polycrystalline material prior to etching. The material surface is effectively amorphized by two particle beam bombardments on the material surface. These energized particles break the crystal structure of the crystalline material and convert it effectively into an amorphous material. The two particle beams are oriented to each other at an angle of at least twice of the critical angle of channeling for the most open crystal structure in the material. This ensures effective amorphization of the material surface regardless of the different grain orientations on the surface. The amorphized surface has isotropic surface properties and thus allows uniform etching at the second angle. The uniformity in surface properties allows better control over etching process and reduces damage to underlying and adjacent material.
    Type: Application
    Filed: April 21, 2003
    Publication date: May 6, 2004
    Applicant: NPTEST, INC.
    Inventors: Vladimir V. Makarov, William B. Thompson, Theodore R. Lundquist
  • Publication number: 20040084407
    Abstract: A method for surface preparation of a polycrystalline material prior to etching. The material surface is amorphized by two particle beam bombardments s on the material surface. These energized particles break the crystal structure of the crystalline material and convert it into amorphous material. The two particle beams are oriented to each other at an angle of at least twice of the critical angle of channeling for the most open crystal structure in the material. This ensures amorphization of the material surface regardless of the different grain orientations on the surface. The amorphous surface has isotropic surface properties and thus allows uniform etching. The uniformity in surface properties allows better control over etching process and reduces damage to underlying and adjacent material.
    Type: Application
    Filed: October 31, 2002
    Publication date: May 6, 2004
    Applicant: NPTEST, INC.
    Inventors: Vladimir V. Makarov, William B. Thompson, Theodore R. Lundquist
  • Publication number: 20030038113
    Abstract: A micro-machining process that includes etching a substrate having copper overlying a dielectric layer to a charged particle beam in the presence of an etch assisting agent. The etch assisting agent is selected from the group consisting of ammonia, acetic acid, thiolacetic acid, and combinations thereof.
    Type: Application
    Filed: August 26, 2002
    Publication date: February 27, 2003
    Inventors: Vladimir V. Makarov, Javier Fernandez Ruiz, Tzong-Tsong Miau