Patents by Inventor Vladimir Vladimirovich Alenkov

Vladimir Vladimirovich Alenkov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SINGLE CRYSTAL WITH GARNET STRUCTURE FOR SCINTILLATION COUNTERS AND METHOD FOR PRODUCING SAME
    Publication number: 20210395610
    Abstract: The invention relates to scintillation inorganic oxide single crystals with garnet structure, which comprise cerium and are co-alloyed with titanium and Group 2 elements. The invention makes it possible to increase the scintillation output and to enhance the energy resolution of scintillation detectors during gamma-ray quantum registration. The technical result is achieved by a single crystal with a garnet structure being co-alloyed with cerium, titanium and Group 2 elements. This single crystal is produced by the Czochralski process.
    Type: Application
    Filed: February 2, 2018
    Publication date: December 23, 2021
    Applicant: OTKRYTOE AKTSIONERNOE OBSCHESTVO "FOMOS-MATERIALS"
    Inventors: Vladimir Vladimirovich ALENKOV, Oleg Alekseevich BUZANOV, Aleksei Efimovich DOSOVITSKY, Georgy Alekseevich DOSOVITSKY, Mikhail Vasilievich KORJIK, Andrei Anatolievich FEDOROV
  • Method of growing semiconductor heterostructures based on gallium nitride
    Patent number: 8546830
    Abstract: The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlxGa1-xN (0<x?1), wherein the step of growing A3N structures using (a)-langasite (La3Ga5SiO14) substrates is applied for the purposes of reducing the density of defects and mechanical stresses in heterostructures.
    Type: Grant
    Filed: April 11, 2012
    Date of Patent: October 1, 2013
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Vladimir Semenovich Abramov, Naum Petrovich Soshchin, Valeriy Petrovich Sushkov, Nikolay Valentinovich Shcherbakov, Vladimir Vladimirovich Alenkov, Sergei Aleksandrovich Sakharov, Vladimir Aleksandrovich Gorbylev
  • METHOD OF GROWING SEMICONDUCTOR HETEROSTRUCTURES BASED ON GALLIUM NITRIDE
    Publication number: 20130099244
    Abstract: The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlxGa1-xN (0<x?1), wherein the step of growing A3N structures using (a)-langasite (La3Ga5SiO14) substrates is applied for the purposes of reducing the density of defects and mechanical stresses in heterostructures.
    Type: Application
    Filed: April 11, 2012
    Publication date: April 25, 2013
    Applicants: SEOUL SEMICONDUCTOR CO., LTD.
    Inventors: Vladimir Semenovich ABRAMOV, Naum Petrovich SOSHCHIN, Valeriy Petrovich SUSHKOV, Nikolay Valentinovich SHCHERBAKOV, Vladimir Vladimirovich ALENKOV, Sergei Aleksandrovich SAKHAROV, Vladimir Aleksandrovich GORBYLEV
  • Method of growing semiconductor heterostructures based on gallium nitride
    Patent number: 8174042
    Abstract: The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlxGa1-xN (0<x?1), wherein the step of growing A3N structures using (a)-langasite (La3Ga5SiO14) substrates is applied for the purposes of reducing the density of defects and mechanical stresses in heterostructures.
    Type: Grant
    Filed: July 14, 2011
    Date of Patent: May 8, 2012
    Assignees: Seoul Semiconductor Co., Ltd., Vladimir Semenovich Abramov
    Inventors: Vladimir Semenovich Abramov, Naum Petrovich Soshchin, Valeriy Petrovich Sushkov, Nikolay Valentinovich Shcherbakov, Vladimir Vladimirovich Alenkov, Sergei Aleksandrovich Sakharov, Vladimir Aleksandrovich Gorbylev
  • METHOD OF GROWING SEMICONDUCTOR HETEROSTRUCTURES BASED ON GALLIUM NITRIDE
    Publication number: 20110266555
    Abstract: The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlxGa1-xN (0<x?1), wherein the step of growing A3N structures using (a)-langasite (La3Ga5SiO14) substrates is applied for the purposes of reducing the density of defects and mechanical stresses in heterostructures.
    Type: Application
    Filed: July 14, 2011
    Publication date: November 3, 2011
    Applicants: Seoul Semiconductor Co., Ltd.
    Inventors: Vladimir Semenovich ABRAMOV, Naum Petrovich SOSHCHIN, Valeriy Petrovich SUSHKOV, Nikolay Valentinovich SHCHERBAKOV, Vladimir Vladimirovich ALENKOV, Sergei Aleksandrovich SAKHAROV, Vladimir Aleksandrovich GORBYLEV
  • Method of growing semiconductor heterostructures based on gallium nitride
    Patent number: 7998773
    Abstract: The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlxGa1-xN(0<x?1), wherein the step of growing A3N structures using (a)-langasite (La3Ga5SiO14) substrates is applied for the purposes of reducing the density of defects and mechanical stresses in heterostructures.
    Type: Grant
    Filed: February 6, 2007
    Date of Patent: August 16, 2011
    Assignees: Seoul Semiconductor Co., Ltd.
    Inventors: Vladimir Semenovich Abramov, Naum Petrovich Soshchin, Valeriy Petrovich Sushkov, Nikolay Valentinovich Shcherbakov, Vladimir Vladimirovich Alenkov, Sergei Aleksandrovich Sakharov, Vladimir Aleksandrovich Gorbylev
  • Langasite wafer and method of producing same
    Patent number: 6302956
    Abstract: The invention relates to the field of electronics and can be used in acoustic electronic frequency-selective devices in surface acoustic waves (SAW) and volumetric acoustic waves. The purpose of the invention is the formulation of an industrial process to develop stoichiometrically structured monocrystals of lanthalum gallium silicate, of no less than 75 mm in diameter and greater than 3,5 kg in weight, along a direction of <01.1>±3°. The discs are cut out at a 90° angle with respect to the lengthwise axis, thereby ensuring that the value of the frequency temperature coefficient is zero.
    Type: Grant
    Filed: November 8, 1999
    Date of Patent: October 16, 2001
    Assignee: Rafida Developments, Inc.
    Inventors: Vladimir Vladimirovich Alenkov, Oleg Alexeevich Bouzanov, Alexandr Borisovich Gritsenko, Georgy Georgievich Koznov