Patents by Inventor Vladislav Potanin

Vladislav Potanin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7061210
    Abstract: A current trip point detection circuit includes a transistor, a series of resistors, an amplifier, a comparator, and a series of switching circuits. The first transistor and the resistors are configured as an inverting gain stage. The amplifier cooperates with the first transistor to operate in a negative feedback arrangement. The gain in the feedback loop is adjusted by selective activation of additional transistors, where each additional transistor lowers the overall loop gain. The comparator is selectively coupled to a tap point in a voltage divider that is formed by resistors. The voltage divider tap point is selected to set a threshold for detection. The trip point is detected by the comparator, and may be adjusted between high and low trip points through the various configurations of the gain and voltage divider tap points via the switching circuits.
    Type: Grant
    Filed: April 21, 2003
    Date of Patent: June 13, 2006
    Assignee: National Semiconductor Corporation
    Inventors: Vladislav Potanin, Elena Potanina
  • Patent number: 7030678
    Abstract: The speed of a level shifter, which translates a first voltage in a first power domain to a second voltage in a second power domain, is increased by utilizing a first bipolar transistor to assist a first MOS transistor in pulling down the voltage on a first output node, and a second bipolar transistor to assist a second MOS transistor in pulling down the voltage on a second output node.
    Type: Grant
    Filed: February 11, 2004
    Date of Patent: April 18, 2006
    Assignee: National Semiconductor Corporation
    Inventors: Alexander Burinskiy, Vladislav Potanin, Elena Potanina
  • Patent number: 7019581
    Abstract: A method and circuit for tracking a load current and a load voltage to provide an output signal that is proportional to the load current. The circuit enables employment of high gate area (W/L) ratio for a current mirror type current sense circuit, while maintaining accuracy of a sense current. A tracking circuit tracks the load current and the load voltage providing equal biasing to a power pass transistor and a power sense transistor. The tracking circuit further supplies a gate voltage to a cascode transistor, which provides the output signal proportional to the load current. A trimming circuit allows adjustment of a current flowing through the cascode transistor enabling calibration of the circuit for variations of W/L ratio between the power pass transistor and power sense transistor due to manufacturing tolerances. Calibration may be performed during initial power-on and selected trimming transistors may be turned on or off.
    Type: Grant
    Filed: June 3, 2004
    Date of Patent: March 28, 2006
    Assignee: National Semiconductor Corporation
    Inventors: Vladislav Potanin, Elena Potanina
  • Patent number: 6919811
    Abstract: A detection circuit is configured to detect the presence of a power source by comparing two input voltages (VIN1, VIN2). An example detection circuit is arranged, such that the first input voltage (VIN1) may operate above the process limit for transistor breakdown, while the second input voltage (VIN2) should be maintained below the transistor breakdown voltage. The detection circuit includes a built-in offset voltage (VOS) for hysteresis such that the detection signal is activated when VIN1>VIN2+VOS. The detection circuit is useful for providing an enable signal in a battery charger application. It is envisioned that the detection circuit is also useful in other applications where detection of a power source is required, and where detection of one voltage relative to another may be desired.
    Type: Grant
    Filed: May 30, 2003
    Date of Patent: July 19, 2005
    Assignee: National Semiconductor Corporation
    Inventors: Vladislav Potanin, Elena Potanina