Patents by Inventor Vladislav Vashchenho

Vladislav Vashchenho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of etching a lateral trench under a drain junction of a MOS transistor
    Patent number: 7023068
    Abstract: In a MOS transistor, the drain capacitance is reduced by forming a lateral trench underneath the drain. This is typically done by using an anisotropic wet etch process in a <110> direction of a <100> orientation wafer.
    Type: Grant
    Filed: November 17, 2003
    Date of Patent: April 4, 2006
    Assignee: National Semiconductor Corporation
    Inventors: Peter J. Hopper, Philipp Lindorfer, Vladislav Vashchenho, Peter Johnson