Patents by Inventor Vladislav Vashohenko

Vladislav Vashohenko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LVTSCR-like structure with blocking junction under the polygate
    Patent number: 6998651
    Abstract: In a LVTSCR-like structure, an additional p+ region is formed adjacent a n+ floating drain to define a p-n junction with the floating drain underneath a polygate of the structure. The polygate is used as a mask during doping of the p+ region and the n+ floating drain, and the length of the polygate is adjusted to provide the desired triggering voltage for the structure. The triggering voltage is also adjusted by biasing the polygate.
    Type: Grant
    Filed: March 14, 2003
    Date of Patent: February 14, 2006
    Assignee: National Semiconductor Corporation
    Inventors: Vladislav Vashohenko, Ann Concannon, Peter J. Hopper, Marcel Eer Beek