Abstract: A substrate preparation method is provided. The method includes providing a substrate to be prepared. The substrate has a first layer and a second layer. The first layer is to be removed from over the second layer. An energy frequency that is to be absorbed by the second layer while penetrating through the first layer transparently is determined. Energy that has the determined energy frequency is applied onto the first layer so as to disrupt a bond between the first layer and the second layer at a location of application of the energy. A portion of the first layer defined at the location of application of energy is removed. A substrate preparation apparatus is also provided.

Abstract: Systems and apparatus for evaluating the effectiveness of wafer drying techniques are provided. The systems and apparatus include a laser or any other source configured to apply light radiation to the surface of a substrate that has been rinsed with a solution containing an analytically detectable compound prior to a drying process. Any residue of the analytically detectable compound is excited by the source, and the resulting energy is imaged with a confocal microscope or similar device to identify regions of the surface of the substrate of ineffective drying.

Abstract: Methods for evaluating advanced wafer drying techniques are provided. An exemplary method includes applying a solution containing an analytically detectable compound to a substrate prior to a desired drying operation. The method then provides for the inspection and analysis of the substrate for any residue of the analytically detectable compound, the presence of which identifies any regions of the substrate where the drying operation is ineffective. The drying operation is selected, changed, or modified according to the results of the evaluation.