Patents by Inventor Vladmir Bulovic

Vladmir Bulovic has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9653630
    Abstract: The performance of lead sulfide quantum dot (QD) photovoltaic cells is improved by exposing a QD layer to a solution containing metal salts after the synthesis of the QDs is completed. The halide ions from the salt solution passivate surface lead (Pb) sites and alkali metal ions mend Pb vacancies. Metal cations and halide anions with small ionic radius have high probability of reaching QD surfaces to eliminate surface recombination sites. Compared to control devices fabricated using only a ligand exchange procedure without salt exposure, devices with metal salt treatment show increases in both the form factor and short circuit current of the PV cell. Some embodiments comprise a method for treatment of QDs with a salt solution and ligand exchange. Other embodiments comprise a photovoltaic cell having a QD layer treated with a salt solution and ligand exchange.
    Type: Grant
    Filed: May 5, 2014
    Date of Patent: May 16, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Su Kyung Suh, Dong-Kyun Ko, Vladmir Bulovic, Moungi Bawendi
  • Publication number: 20160035919
    Abstract: The performance of lead sulfide quantum dot (QD) photovoltaic cells is improved by exposing a QD layer to a solution containing metal salts after the synthesis of the QDs is completed. The halide ions from the salt solution passivate surface lead (Pb) sites and alkali metal ions mend Pb vacancies. Metal cations and halide anions with small ionic radius have high probability of reaching QD surfaces to eliminate surface recombination sites. Compared to control devices fabricated using only a ligand exchange procedure without salt exposure, devices with metal salt treatment show increases in both the form factor and short circuit current of the PV cell. Some embodiments comprise a method for treatment of QDs with a salt solution and ligand exchange. Other embodiments comprise a photovoltaic cell having a QD layer treated with a salt solution and ligand exchange.
    Type: Application
    Filed: May 5, 2014
    Publication date: February 4, 2016
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Su Kyung Suh, Dong-Kyun Ko, Vladmir Bulovic, Moungi Bawendi
  • Publication number: 20140035077
    Abstract: A photovoltaic device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.
    Type: Application
    Filed: August 30, 2013
    Publication date: February 6, 2014
    Applicant: Massachusetts Institute of Technology
    Inventors: Alexi Arango, Vladmir Bulovic, Vanessa Wood, Moungi G. Bawendi
  • Publication number: 20110127932
    Abstract: A blue light emitting semiconductor nanocrystal having an quantum yield of greater than 20% can be incorporated in a light emitting device.
    Type: Application
    Filed: August 9, 2007
    Publication date: June 2, 2011
    Applicant: Massachusetts Institute of Technology
    Inventors: Jonathan E. Halpert, Polin O. Anikeeva, Moungi G. Bawendi, Vladmir Bulovic