Patents by Inventor Vlasta Brusic Kaufman
Vlasta Brusic Kaufman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7381648Abstract: A chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and tantalum nitride containing layers from a substrate. The slurry does not include a separate film-forming agent.Type: GrantFiled: July 9, 2003Date of Patent: June 3, 2008Assignee: Cabot Microelectronics CorporationInventors: Vlasta Brusic Kaufman, Rodney C. Kistler, Shumin Wang
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Patent number: 7354530Abstract: Alpha-amino acid containing chemical mechanical polishing compositions and slurries that are useful for polishing substrates including multiple layers of metals, or metals and dielectrics.Type: GrantFiled: January 10, 2005Date of Patent: April 8, 2008Inventors: Shumin Wang, Vlasta Brusic Kaufman
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Patent number: 6867140Abstract: The invention provides a method for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) contacting the first metal layer with a polishing system comprising a liquid carrier, at least one oxidizing agent, at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, wherein the stopping compound is a cationically charged nitrogen containing compound selected from compounds comprising amines, imines, amides, imides, and mixtures thereof, and a polishing pad and/or an abrasive, and (ii) polishing the first metal layer with the system until at least a portion of the first metal layer is removed from the substrate.Type: GrantFiled: January 29, 2003Date of Patent: March 15, 2005Assignee: Cabot Microelectronics CorporationInventors: Shumin Wang, Vlasta Brusic Kaufman, Steven K. Grumbine, Isaac K. Cherian
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Patent number: 6855266Abstract: The invention provides a system for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, (iv) at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, and (v) a polishing pad and/or an abrasive. The invention also provides a composition comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive (iv) at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, to be used with (v) a polishing pad and/or an abrasive.Type: GrantFiled: August 10, 2000Date of Patent: February 15, 2005Assignee: Cabot Microelectronics CorporationInventors: Shumin Wang, Vlasta Brusic Kaufman, Steven K. Grumbine, Isaac K. Cherian
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Patent number: 6852632Abstract: The invention provides a method for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) contacting the first metal layer with a polishing system comprising a liquid carrier, at least one oxidizing agent, at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, wherein the polishing additive is selected from the group consisting of pyrophosphates, condensed phosphates, phosphonic acids and salts thereof, amines, amino alcohols, amides, imines, imino acids, nitriles, nitros, thiols thioesters, thioethers, carbothiolic acids, carbothionic acids, thiocarboxylic acids, thiosalicylic acids, and mixtures thereof, and a polishing pad and/or an abrasive, and (ii) polishing the first metal layer with the system until at least a portion of the first metal layer is removed from the substrate.Type: GrantFiled: January 29, 2003Date of Patent: February 8, 2005Assignee: Cabot Microelectronics CorporationInventors: Shumin Wang, Vlasta Brusic Kaufman, Steven K. Grumbine, Isaac K. Cherian, Renjie Zhou
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Patent number: 6840971Abstract: Alpha-amino acid containing chemical mechanical polishing compositions and slurries that are useful for polishing substrates including multiple layers of metals, or metals and dielectrics.Type: GrantFiled: December 19, 2002Date of Patent: January 11, 2005Assignee: Cabot microelectronics CorporationInventors: Shumin Wang, Vlasta Brusic Kaufman
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Publication number: 20040009671Abstract: A chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and tantalum nitride containing layers from a substrate. The slurry does not include a separate film-forming agent.Type: ApplicationFiled: July 9, 2003Publication date: January 15, 2004Applicant: Cabot Microelectronics CorporationInventors: Vlasta Brusic Kaufman, Rodney C. Kistler, Shumin Wang
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Patent number: 6620037Abstract: A chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and tantalum nitride containing layers from a substrate. The slurry does not include a separate film-forming agent.Type: GrantFiled: May 14, 2002Date of Patent: September 16, 2003Assignee: Cabot Microelectronics CorporationInventors: Vlasta Brusic Kaufman, Rodney C. Kistler, Slumin Wang
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Publication number: 20030170991Abstract: The invention provides a system for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, wherein the polishing additive is selected from the group consisting of pyrophosphates, condensed phosphates, phosphonic acids and salts thereof, amines, amino alcohols, amides, imines, imino acids, nitrites, nitros, thiols, thioesters, thioethers, carbothiolic acids, carbothionic acids, thiocarboxylic acids, thiosalicylic acids, and mixtures thereof, and (iv) a polishing pad and/or an abrasive. The invention also provides a method of polishing a substrate comprising contacting a surface of a substrate with the system and polishing at least a portion of the substrate therewith.Type: ApplicationFiled: January 29, 2003Publication date: September 11, 2003Applicant: Cabot Microelectronics CorporationInventors: Shumin Wang, Vlasta Brusic Kaufman, Steven K. Grumbine, Isaac K. Cherian, Renjie Zhou
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Publication number: 20030166337Abstract: Alpha-amino acid containing chemical mechanical polishing compositions and slurries that are useful for polishing substrates including multiple layers of metals, or metals and dielectrics.Type: ApplicationFiled: December 19, 2002Publication date: September 4, 2003Applicant: Cabot Microelectronics, Corp.Inventors: Shumin Wang, Vlasta Brusic Kaufman
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Publication number: 20030153184Abstract: The invention provides a system for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, (iv) at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, wherein the stopping compound is a cationically charged nitrogen containing compound selected from compounds comprising amines, imines, amides, imides, and mixtures thereof, and (v) a polishing pad and/or an abrasive. The invention also provides a method of polishing a substrate comprising contacting a surface of a substrate with the system and polishing at least a portion of the substrate therewith.Type: ApplicationFiled: January 29, 2003Publication date: August 14, 2003Applicant: Cabot Microelectronics CorporationInventors: Shumin Wang, Vlasta Brusic Kaufman, Steven K. Grumbine, Isaac K. Cherian
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Patent number: 6593239Abstract: A chemical mechanical polishing slurry comprising a film forming agent, an oxidizer, a complexing agent and an abrasive, and a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.Type: GrantFiled: August 4, 1999Date of Patent: July 15, 2003Assignee: Cabot Microelectronics Corp.Inventors: Vlasta Brusic Kaufman, Rodney C. Kistler
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Patent number: 6589100Abstract: The invention provides a method for polishing a substrate comprising a metal layer using a chemical-mechanical polishing system comprising an abrasive and/or polishing pad, a rare earth salt, an oxidizer that is a stronger oxidant than the rare earth salt, and a liquid carrier.Type: GrantFiled: September 24, 2001Date of Patent: July 8, 2003Assignee: Cabot Microelectronics CorporationInventors: Kevin Moeggenborg, Vlasta Brusic Kaufman, Isaac K. Cherian
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Patent number: 6569350Abstract: A chemical mechanical polishing slurry comprising a film forming agent, urea hydrogen peroxide, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.Type: GrantFiled: March 15, 2002Date of Patent: May 27, 2003Assignee: Cabot Microelectronics CorporationInventors: Vlasta Brusic Kaufman, Rodney C. Kistler, Shumin Wang
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Publication number: 20030060135Abstract: The invention provides a method for polishing a substrate comprising a metal layer using a chemical-mechanical polishing system comprising an abrasive and/or polishing pad, a rare earth salt, an oxidizer that is a stronger oxidant than the rare earth salt, and a liquid carrier.Type: ApplicationFiled: September 24, 2001Publication date: March 27, 2003Applicant: Cabot Microelectronics CorporationInventors: Kevin Moeggenborg, Vlasta Brusic Kaufman, Isaac K. Cherian
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Publication number: 20020168923Abstract: A chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and tantalum nitride containing layers from a substrate. The slurry does not include a separate film-forming agent.Type: ApplicationFiled: May 14, 2002Publication date: November 14, 2002Applicant: Cabot Microelectronics Corp.Inventors: Vlasta Brusic Kaufman, Rodney C. Kistler, Shumin Wang
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Publication number: 20020145127Abstract: A chemical mechanical polishing slurry comprising a film forming agent, urea hydrogen peroxide, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.Type: ApplicationFiled: March 15, 2002Publication date: October 10, 2002Applicant: Cabot Microelectronics Corp.Inventors: Vlasta Brusic Kaufman, Rodney C. Kistler, Shumin Wang
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Patent number: 6447371Abstract: The present invention is a first CMP slurry including an abrasive, an oxidizing agent, a complexing agent, a film forming agent and an organic amino compound, a second polishing slurry including an abrasive, an oxidizing agent, and acetic acid wherein the weight ratio of the oxidizing agent to acetic acid is at least 10 and a method for using the first and second polishing slurries sequentially to polish a substrate containing copper and containing tantalum or tantalum nitride or both tantalum and tantalum nitride.Type: GrantFiled: March 6, 2001Date of Patent: September 10, 2002Assignee: Cabot Microelectronics CorporationInventors: Vlasta Brusic Kaufman, Rodney C. Kistler, Shumin Wang
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Patent number: 6432828Abstract: A chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and tantalum nitride containing layers from a substrate. The slurry does not include a separate film-forming agent.Type: GrantFiled: March 18, 1998Date of Patent: August 13, 2002Assignee: Cabot Microelectronics CorporationInventors: Vlasta Brusic Kaufman, Rodney C. Kistler, Shumin Wang
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Patent number: 6362106Abstract: A chemical mechanical polishing slurry comprising a film forming agent, urea hydrogen peroxide, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.Type: GrantFiled: September 13, 2000Date of Patent: March 26, 2002Assignee: Cabot Microelectronics CorporationInventors: Vlasta Brusic Kaufman, Rodney C. Kistler, Shumin Wang