Abstract: Circuits are provided for simultaneously reducing the subthreshold and gate oxide leakage power consumption in domino logic circuits. Sleep transistors and a dual threshold voltage CMOS technology may be utilized to place idle domino logic circuits into a low leakage state. The circuits may significantly lower the total leakage power as compared to the standard dual threshold voltage domino logic circuits at both the high and low die temperatures. The energy overheads of the circuit techniques may be low, justifying the activation of the proposed sleep schemes by providing net savings in total power consumption during short idle periods.

Abstract: Low voltage swing techniques are provided for simultaneously reducing the active and standby mode power consumption and enhancing the noise immunity in domino logic circuits. One or both the upper and lower boundaries of the voltage swing at the dynamic node may be different from the upper and lower boundaries of the voltage swing at the output node. Further, the domino logic circuit may use dual Vt thereby reducing the short-circuit current during operation. Meanwhile, full voltage swing signals may be maintained at the inputs and outputs for high speed operation. The low swing circuit techniques are provided that modify the output voltage swing of a domino gate, thereby reducing the active mode power consumption.

Abstract: A variable threshold voltage keeper circuit technique is proposed for simultaneous power reduction and speed enhancement of domino logic circuits. The threshold voltage of the keeper transistor is dynamically modified during circuit operation to reduce the contention current without sacrificing noise immunity. The threshold voltage of the keeper transistor is controlled by a body bias generator which switches between two voltages in accordance with the clock signal.

Abstract: Circuits are provided for simultaneously reducing the subthreshold and gate oxide leakage power consumption in domino logic circuits. Sleep transistors and a dual threshold voltage CMOS technology may be utilized to place idle domino logic circuits into a low leakage state. The circuits may significantly lower the total leakage power as compared to the standard dual threshold voltage domino logic circuits at both the high and low die temperatures. The energy overheads of the circuit techniques may be low, justifying the activation of the proposed sleep schemes by providing net savings in total power consumption during short idle periods.

Abstract: Low voltage swing techniques are provided for simultaneously reducing the active and standby mode power consumption and enhancing the noise immunity in domino logic circuits. One or both the upper and lower boundaries of the voltage swing at the dynamic node may be different from the upper and lower boundaries of the voltage swing at the output node. For example, the voltage swing at the dynamic node may be less than the voltage swing at the output node, optimized for speed or power consumption. As another example, the voltage swing at the dynamic node may be greater than the voltage swing at the output node, optimized for speed or power consumption. Further, the domino logic circuit may use dual Vt thereby reducing the short-circuit current during operation. Meanwhile, full voltage swing signals may be maintained at the inputs and outputs for high speed operation.

Abstract: A variable threshold voltage keeper circuit technique is proposed for simultaneous power reduction and speed enhancement of domino logic circuits. The threshold voltage of the keeper transistor is dynamically modified during circuit operation to reduce the contention current without sacrificing noise immunity. The threshold voltage of the keeper transistor is controlled by a body bias generator which switches between two voltages in accordance with the clock signal.

Abstract: An fully integrated DC-to-DC switching converter having an inductor, where the inductor has magnetic material that may be amorphous CoZrTa, CoFeHfO, CoAlO, FeSiO, CoFeAlO, CoNbTa, CoZr, and other amorphous cobalt alloys. The magnetic material allows for a relatively high switching frequency. In one embodiment, the inductor has two sub-structures, where each of the two sub-structures are parallel to each other and each includes a conductor having upper and lower portions. The conductors of the two sub-structures are electrically connected to each other, and the upper and lower portions are arranged so that magnetic flux from one of the sub-structures couples with the magnetic flux from the other sub-structure so as to provide a relatively high inductance with small form factor. In another embodiment, the inductor is a simple conductor surrounded by high-frequency magnetic material. In both structures, oxide insulates the conductors from the magnetic material.

Abstract: An fully integrated DC-to-DC switching converter having an inductor, where the inductor has magnetic material that may be amorphous CoZrTa, CoFeHfO, CoAlO, FeSiO, CoFeAlO, CoNbTa, CoZr, and other amorphous cobalt alloys. The magnetic material allows for a relatively high switching frequency. In one embodiment, the inductor has two sub-structures, where each of the two sub-structures are parallel to each other and each includes a conductor having upper and lower portions. The conductors of the two sub-structures are electrically connected to each other, and the upper and lower portions are arranged so that magnetic flux from one of the sub-structures couples with the magnetic flux from the other sub-structure so as to provide a relatively high inductance with small form factor. In another embodiment, the inductor is a simple conductor surrounded by high-frequency magnetic material. In both structures, oxide insulates the conductors from the magnetic material.

Abstract: A domino logic circuit is configured to reduce power consumption. In a first embodiment, a sleep switch grounds the dynamic node during sleep mode. In a second embodiment, a low-swing circuit at the output reduces the output and keeper transistor gate voltage swings. A third embodiment combines those two techniques.

Abstract: Embodiments of the present invention relate to independently switched inductors in a voltage converter. Each voltage transforming inductor of a voltage converter may be deignated a switch or bridge at each opposing terminal. The function of these switches is to periodically reverse the polarity of voltage across the inductors. By configuring independently switched inductors in series, the frustration of voltage tolerance limitations of the switches is mitigated.

Abstract: An fully integrated DC-to-DC switching converter having an inductor, where the inductor has magnetic material that may be amorphous CoZrTa, CoFeHfO, CoAlO, FeSiO, CoFeAlO, CoNbTa, CoZr, and other amorphous cobalt alloys. The magnetic material allows for a relatively high switching frequency. In one embodiment, the inductor has two sub-structures, where each of the two sub-structures are parallel to each other and each includes a conductor having upper and lower portions. The conductors of the two sub-structures are electrically connected to each other, and the upper and lower portions are arranged so that magnetic flux from one of the sub-structures couples with the magnetic flux from the other sub-structure so as to provide a relatively high inductance with small form factor. In another embodiment, the inductor is a simple conductor surrounded by high-frequency magnetic material. In both structures, oxide insulates the conductors from the magnetic material.

Abstract: Embodiments of the present invention relate to independently switched inductors in a voltage converter. Each voltage transforming inductor of a voltage converter may be designated a switch or bridge at each opposing terminal. The function of these switches is to periodically reverse the polarity of voltage across the inductors. By configuring independently switched inductors in series, the frustration of voltage tolerance limitations of the switches is mitigated.

Abstract: A domino logic circuit is configured to reduce power consumption. In a first embodiment, a sleep switch grounds the dynamic node during sleep mode. In a second embodiment, a low-swing circuit at the output reduces the output and keeper transistor gate voltage swings. A third embodiment combines those two techniques.