Abstract: A vapor deposition apparatus is provided. The vapor deposition apparatus includes a tank for providing a liquefied material, a first unit having an alterable first volume, the first unit including a first actuator and including a first line to be in fluid communication with the tank. Further, the vapor deposition apparatus includes a second unit having an alterable second volume, the second unit including a second actuator and including a second line to be in fluid communication with the tank. The vapor deposition apparatus includes an evaporation arrangement, the evaporation arrangement being in fluid communication with the first unit and the second unit. The first actuator and the second actuator are configured to alternatingly provide a force to the alterable first volume and the alterable second volume for providing the liquefied material to the evaporation arrangement.

Abstract: According to the present disclosure, a substrate processing apparatus for processing a flexible substrate including a vacuum chamber configured for being evacuated and being configured for having a process gas provided therein, a processing module adapted to process the flexible substrate, wherein the processing module is provided within the vacuum chamber, and a discharging assembly configured to generate a flow of charged particles to discharge the flexible substrate is provided. The discharging assembly is configured to generate an electric field for ionizing a processing gas.

Abstract: According to the present disclosure, a substrate processing apparatus for processing a flexible substrate including a vacuum chamber configured for being evacuated and being configured for having a process gas provided therein, a processing module adapted to process the flexible substrate, wherein the processing module is provided within the vacuum chamber, and a discharging assembly configured to generate a flow of charged particles to discharge the flexible substrate is provided. The discharging assembly is configured to generate an electric field for ionizing a processing gas.

Abstract: A linear plasma electron source is provided. The linear plasma electron source includes a housing acting as a first electrode, the housing having side walls a slit opening in the housing for trespassing of a electron beam, the slit opening defining a length direction of the source, a second electrode being arranged within the housing and having a first side facing the slit opening, the first side being spaced from the slit opening by a first distance, wherein the length of the electron source in the length direction is at least 5 times the first distance, and at least one gas supply for providing a gas into the housing.

Abstract: The present disclosure relates to a device for sealing a chamber inlet or a chamber outlet for a flexible substrate, comprising a body having a sealing surface, a substrate opening formed in the body configured to be traversed by the flexible substrate, an elastic tube at least partially facing the sealing surface, wherein the elastic tube has a connecting portion for connecting to a gas supply and being adapted for inflating and deflating during operation.

Abstract: A method of charging a web or foil is described. The method includes guiding a web or foil having a thickness of 10 ?m or larger with at least on roller; providing a linear electron source having a housing acting as an anode, the housing having side walls; a slit opening in the housing for trespassing of a linear electron beam, the slit opening defining a length direction of the source; a cathode being arranged within the housing and having a first side facing the slit opening; at least one gas supply for providing a gas into the housing; and a power supply for providing a high voltage between the anode and the cathode; and emitting the linear electron beam, wherein the high voltage is adjusted for providing an electron energy to implant electrons of the electron beam within the web or foil.

Abstract: A method of charging a web or foil is described. The method includes guiding a web or foil having a thickness of 10 ?m or larger with at least on roller; providing a linear electron source having a housing acting as an anode, the housing having side walls; a slit opening in the housing for trespassing of a linear electron beam, the slit opening defining a length direction of the source; a cathode being arranged within the housing and having a first side facing the slit opening; at least one gas supply for providing a gas into the housing; and a power supply for providing a high voltage between the anode and the cathode; and emitting the linear electron beam, wherein the high voltage is adjusted for providing an electron energy to implant electrons of the electron beam within the web or foil.

Abstract: A linear plasma electron source is provided. The linear plasma electron source includes a housing acting as a first electrode, the housing having side walls a slit opening in the housing for trespassing of a electron beam, the slit opening defining a length direction of the source, a second electrode being arranged within the housing and having a first side facing the slit opening, the first side being spaced from the slit opening by a first distance, wherein the length of the electron source in the length direction is at least 5 times the first distance, and at least one gas supply for providing a gas into the housing.

Abstract: An evaporation apparatus for evaporating a material to be deposited is described. The evaporation apparatus includes at least one evaporation crucible having a body with an area for receiving the material to be deposited at one side; a linear electron source being positioned adjacent to the evaporation crucible for impingement of an electron beam on another side. The linear electron source includes a housing acting as a first electrode, the housing having side walls; slit opening in the housing for trespassing of a electron beam, the slit opening defining a length direction of the source; a second electrode being arranged within the housing and having a first side facing the slit opening; and at least one gas supply for providing a gas into the housing, wherein the first electrode is the anode and the second electrode is the cathode.

Abstract: A system and method for producing electrons and ions are disclosed. One embodiment includes an outer electrode with a discharge chamber; an inner electrode positioned inside the discharge chamber, the inner electrode positioning forming a upper portion of the discharge chamber and a lower portion of the discharge chamber; and a gas inlet positioned in the lower portion of the discharge chamber; wherein a plasma formed within the lower portion of the discharge chamber provides priming particles usable to form a plasma in the upper portion of the discharge chamber.

Abstract: A system and method for producing electrons and ions are disclosed. One embodiment includes an outer electrode with a discharge chamber; an inner electrode positioned inside the discharge chamber, the inner electrode positioning forming a upper portion of the discharge chamber and a lower portion of the discharge chamber; and a gas inlet positioned in the lower portion of the discharge chamber; wherein a plasma formed within the lower portion of the discharge chamber provides priming particles usable to form a plasma in the upper portion of the discharge chamber.

Abstract: A coating for a synthetic material substrate having at least one layer of a material, in which the absorption of light in the visible range is negligible, wherein the synthetic material substrate is a three-dimensional hollow body and the layer of the material has a thickness a wherein 0.5 a<a<b applies and b is the thickness of a layer of the same material at which the transmission of white light is 0.1% to 0.2%, wherein the coating provides a barrier against gases or vapors.

Abstract: The invention relates to a method for the production on a substrate of gas- and liquid-impermeable layers, which have a relatively high elasticity. This elasticity is attained through the inclusion of carbon in a layer comprised of a metal or semiconductor oxide. In order to attain such an inclusion, a metal or semiconductor is ionized by means of an arc discharge. Subsequently, a reactive gas, for example O2, is introduced, with which the ionized metal or the ionized semiconductor forms an oxide. In addition, a carbon-containing gas is added, which releases its carbon such that on the substrate an oxide layer is formed, in which carbon is included.