Abstract: A method may be provided for inactivating biologically active components in a liquid using low-energy electrons generated by an electron source, the electrons having an acceleration voltage of 25 keV to 300 keV. The method comprises the following steps: a) filling a vessel with a liquid volume; b) applying low-energy electrons to a first partial volume of the liquid filled into the vessel, wherein the first partial volume is a maximum of 10% of the liquid volume in the vessel; c) mixing the first partial volume of the liquid, applied with the low-energy electrons, to the second partial liquid volume in the vessel, which has not been applied with low-energy electrons; d) repeating steps b) and c) several times.

Abstract: A method may be provided for stimulating the growth of a biomass, which is mixed with a liquid inside a bioreactor, by means of ionising radiation. The following method steps are used: a) exposing a first partial volume of the liquid in the bioreactor to ionising radiation, the first partial volume comprising at most 10% of the liquid volume in the bioreactor; b) mixing the first partial liquid volume, which has been exposed to ionising radiation, with the second partial liquid volume, which has not been exposed to ionising radiation, in the bioreactor; c) repeating method steps a) and b) multiple times, each partial volume of the liquid in the bioreactor being exposed to a total radiation dose of at most 50 Gy on statistical average.

Abstract: Apparatuses and methods are provided for applying accelerated electrons to a gaseous medium by means of an electron beam generator, which has at least one cathode for emitting electrons and at least one electron exit window, wherein a) the at least one cathode is annular and the at least one electron exit window is in the form of an annular first hollow cylinder, the annular electron exit window in the form of the first hollow cylinder forms an inner wall of an annular housing of the electron beam generator, wherein the electrons emitted by the cathode are accelerated to the ring axis of the annular housing; b) an annular second hollow cylinder is arranged within the electron exit window in the form of the first hollow cylinder and delimits an annular space between the first hollow cylinder and the second hollow cylinder; c) a cooling gas is fed through the annular space between the first hollow cylinder and the second hollow cylinder; and d) the gaseous medium to which accelerated electrons are to be applied

Abstract: A hollow cathode system generates a plasma. The system includes an anode device, a power supply for applying an electric current between a cathode tube and the anode device, and at least one gas reservoir for supplying the gas flowing through the cathode tube are used, in which at least two cathode tubes are used that are electrically connected to one another, and in which each cathode tube has a separate actuator with which the amount of gas flowing through the respective cathode tube is set.

Abstract: Apparatuses and methods are provided for applying accelerated electrons to a gaseous medium by means of an electron beam generator, which has at least one cathode for emitting electrons and at least one electron exit window, wherein a) the at least one cathode is annular and the at least one electron exit window is in the form of an annular first hollow cylinder, the annular electron exit window in the form of the first hollow cylinder forms an inner wall of an annular housing of the electron beam generator, wherein the electrons emitted by the cathode are accelerated to the ring axis of the annular housing; b) an annular second hollow cylinder is arranged within the electron exit window in the form of the first hollow cylinder and delimits an annular space between the first hollow cylinder and the second hollow cylinder; c) a cooling gas is fed through the annular space between the first hollow cylinder and the second hollow cylinder; and d) the gaseous medium to which accelerated electrons are to be applied

Abstract: Provided is a semi-transparent display and a method for producing a semi-transparent display. An SOI wafer is provided, the surface having at least one pixel region and at least one contact region arranged next to the pixel region, the SOI wafer comprising a silicon substrate on the rear side. At least one electromagnetic-radiation-emitting layer is deposited on the front side of the SOI wafer. At least one transparent cover layer is applied above the at least one electromagnetic-radiation-emitting layer. A wiring carrier is fastened to the assembly comprising the SOI wafer, the electromagnetic-radiation-emitting layer and the transparent cover layer. Before fastening of the wiring carrier to the assembly, the silicon substrate is removed from the assembly, producing a residual assembly, and electrically conductive connections are formed between the contact region of the SOI wafer and the wiring carrier from the rear side of the SOI wafer.

Abstract: Provided is a semi-transparent display and a method for producing a semi-transparent display. An SOI wafer is provided, the surface having at least one pixel region and at least one contact region arranged next to the pixel region, the SOI wafer comprising a silicon substrate on the rear side. At least one electromagnetic-radiation-emitting layer is deposited on the front side of the SOI wafer. At least one transparent cover layer is applied above the at least one electromagnetic-radiation-emitting layer. A wiring carrier is fastened to the assembly comprising the SOI wafer, the electromagnetic-radiation-emitting layer and the transparent cover layer. Before fastening of the wiring carrier to the assembly, the silicon substrate is removed from the assembly, producing a residual assembly, and electrically conductive connections are formed between the contact region of the SOI wafer and the wiring carrier from the rear side of the SOI wafer.

Abstract: A method may be provided for stimulating the growth of a biomass, which is mixed with a liquid inside a bioreactor, by means of ionising radiation. The following method steps are used: a) exposing a first partial volume of the liquid in the bioreactor to ionising radiation, the first partial volume comprising at most 10% of the liquid volume in the bioreactor; b) mixing the first partial liquid volume, which has been exposed to ionising radiation, with the second partial liquid volume, which has not been exposed to ionising radiation, in the bioreactor; c) repeating method steps a) and b) multiple times, each partial volume of the liquid in the bioreactor being exposed to a total radiation dose of at most 50 Gy on statistical average.

Abstract: A method may be provided for inactivating biologically active components in a liquid using low-energy electrons generated by an electron source, the electrons having an acceleration voltage of 25 keV to 300 keV. The method comprises the following steps: a) filling a vessel with a liquid volume; b) applying low-energy electrons to a first partial volume of the liquid filled into the vessel, wherein the first partial volume is a maximum of 10% of the liquid volume in the vessel; c) mixing the first partial volume of the liquid, applied with the low-energy electrons, to the second partial liquid volume in the vessel, which has not been applied with low-energy electrons; d) repeating steps b) and c) several times.

Abstract: Provided is a semi-transparent display and a method for producing a semi-transparent display. An SOI wafer is provided, the surface having at least one pixel region and at least one contact region arranged next to the pixel region, the SOI wafer comprising a silicon substrate on the rear side. At least one electromagnetic-radiation-emitting layer is deposited on the front side of the SOI wafer. At least one transparent cover layer is applied above the at least one electromagnetic-radiation-emitting layer. A wiring carrier is fastened to the assembly comprising the SOI wafer, the electromagnetic-radiation-emitting layer and the transparent cover layer. Before fastening of the wiring carrier to the assembly, the silicon substrate is removed from the assembly, producing a residual assembly, and electrically conductive connections are formed between the contact region of the SOI wafer and the wiring carrier from the rear side of the SOI wafer.

Abstract: A method for producing a component is provided, where the component comprises a substrate, which emits at least one electromagnetic radiation in a first wavelength range and an electromagnetic radiation in a second wavelength range within one surface area. Electrodes can be formed within the surface area of the substrate; a first layer stack can be deposited, comprising at least one layer, which causes the emission of the electromagnetic radiation in the first wavelength range, and a cover layer, acting as the first counterelectrode, on the entire surface area; the first layer stack can be removed from a first partial surface area, which comprises at least one electrode; a second layer stack can be deposited, comprising at least one layer, which causes the emission of the electromagnetic radiation in the second wavelength range, and a second cover layer, acting as the counterelectrode, on the entire surface area.

Abstract: A method for producing a component is provided, where the component comprises a substrate, which emits at least one electromagnetic radiation in a first wavelength range and an electromagnetic radiation in a second wavelength range within one surface area. Electrodes can be formed within the surface area of the substrate; a first layer stack can be deposited, comprising at least one layer, which causes the emission of the electromagnetic radiation in the first wavelength range, and a cover layer, acting as the first counterelectrode, on the entire surface area; the first layer stack can be removed from a first partial surface area, which comprises at least one electrode; a second layer stack can be deposited, comprising at least one layer, which causes the emission of the electromagnetic radiation in the second wavelength range, and a second cover layer, acting as the counterelectrode, on the entire surface area.

Abstract: A method for the production of nanoscopic and/or microscopic surface structures on a flat substrate is provided, wherein the surface structure of the substrate is changed through the use of an ion etching process. First, a coating that features a boundary surface-active substance with a concentration of 0.01 to 5 percent by weight is applied to the substrate. The coating applied to the substrate is subsequently transformed into a solid form, and the ion etching process is then performed.

Abstract: A method for producing an epitaxial layer made of a semiconductor material is provided in which at least one surface region of a monocrystalline substrate is subjected to dry etching inside a work chamber. A non-epitaxial semiconductor layer is then deposited on the etched surface region of the monocrystalline substrate by vaporizing a semiconductor material using an electron beam, as a result of which vapour particles of the vaporized semiconductor material are deposited on the etched surface region of the monocrystalline substrate. The non-epitaxial semiconductor layer is finally crystallized by inputting energy.

Abstract: Device for producing an electron beam includes a housing, which delimits a space that is evacuatable and has an electron beam outlet opening; an inlet structured and arranged for feeding process gas into the space; and a planar cathode and an anode, which are arranged in the space, and between which, a glow discharge plasma is producible by an applied electrical voltage. Ions are accelerateable from the glow discharge plasma onto a surface of the cathode and electrons emitted by the cathode are accelerateable into the glow discharge plasma. The cathode includes a first part made of a first material at least on an emission side, which forms a centrally arranged first surface region of the cathode, and a second part made of a second material, which forms a second surface region of the cathode that encloses the first surface region.

Abstract: The invention relates to a device for producing an electron beam, comprising a housing (12), which delimits a space (13) that can be evacuated and has an electron beam outlet opening; an inlet (16) for feeding a process gas into the space (13) that can be evacuated; a planar cathode (14) and an anode (15), which are arranged in the space (13) that can be evacuated and between which a glow-discharge plasma can be produced by means of an applied electrical voltage, wherein ions can be accelerated from the glow-discharge plasma onto the surface of the cathode (14). The cathode has a first part (14a) made of a first material, which forms a centrally arranged first surface region of the cathode (14), and a second part (14b) made of a second material, which forms a second surface region of the cathode (14) that encloses the first surface region.

Abstract: The invention relates to a device and a method for altering the characteristics of a three-dimensional article by means of electrons, including at least one electron accelerator for generating accelerated electrons and two electron exit windows, wherein the two electron exit windows are arranged opposite one another, wherein the two electron exit windows and at least one reflector delimit a process chamber in which the surface or surface layer of the article are bombarded with electrons, wherein an energy density distribution inside the process chamber can be detected at least over one spatial dimension by means of a sensor system.

Abstract: The invention relates to a covering material for biomass and a method for the production thereof, in which at least two components (A) and (B) are mixed and subsequently applied onto the biomass, wherein component (A) comprises an oil of animal or vegetable origin and an alginate and component (B) comprises an aqueous latex dispersion and/or a protein dissolved in water.

Abstract: A method for producing a flexible circuit board material having a polymer substrate and a copper layer. The method includes depositing a layer of titanium oxide to be between the polymer substrate and the copper layer. The layer of titanium oxide and the copper layer are deposited using vacuum methods.

Abstract: The invention relates to a headlight for a motor vehicle with a sealing disk, which as a component of a housing seals an interior enclosed by the housing from the environment, wherein a layer system, comprising a lower layer, followed by a metal layer and an upper layer, is deposited on the side of the sealing disk directed towards the interior by means of a vacuum method, wherein the lower layer and/or the upper layer is deposited either as a nitride of the elements Al or Si or as an oxide or a mixed oxide of the elements Si, Ti Al, Zn, Sn, In, Nb, Zr, or Ta.