Abstract: A magnetic thin film storage device of simplified design working on the shift register principle and comprising a flat support to which a ferromagnetic layer has been applied, which layer contains regions of different coercivity, lower-coercivity regions being surrounded by regions of higher coercivity, and also comprising electric conductors extending in planes which are parallel to the support, the conductors serving to produce the magnetic fields required to propagate magnetic domains into the lower-coercivity regions, at least one group of channels being provided which terminate in the same enlarged lower-coercivity area, and the magnetic domains contained in the channels terminating in the said enlarged area being propagated individually and consecutively into that enlarged area.