Abstract: An integrated semiconductor circuit for reducing power consumption, employing CMOS technology in which a transistor pair can be operated stably at different supply voltages. At each supply voltage the transistors have an associated threshold voltage which can be set via the well and substrate bias voltages. The substrate of the transistor pair is connected to a substrate bias voltage generator circuit and the well is connected to a well bias voltage generator circuit. An input signal representing the level of the supply voltage sets the respective bias voltages corresponding to the level of the supply voltage. Thus, the threshold voltage of each transistor is adapted to the existing supply voltage, thereby ensuring stable operation of the transistor pair. A battery driven data processing system with the integrated semiconductor circuit can attain an approximate 100 fold extension of the operating time of the battery.

Abstract: A method for making an integrated circuit chip packaging structure comprising a substrate, preferably a semiconductor base substrate, a conductive layer on said substrate in regions where connections to metallization layers of the substrate are formed, solder balls and gold bumps connected to said conductive layer in said regions of said conductive layer, and a solder stop layer on said conductive layer at least around said solder balls. The conductive layer further comprises wiring lines. Further, a method of forming the structure is disclosed which uses only two masks for providing terminals for connecting the substrate to integrated circuits and to other substrates or to the printed circuit board and wiring lines. Thus, there is a need for one less metallization layer. The method is applicable to 200 mm wafers and allows two different packaging technologies (C-4 and TAB or wire-bonding) on the same substrate. Thus, packaging of VLSI circuits is improved.

Abstract: An integrated circuit chip packaging structure comprising a substrate, preferably a semiconductor base substrate, a conductive layer on said substrate in regions where connections to metallization layers of the substrate are formed, solder balls and gold bumps connected to said conductive layer in said regions of said conductive layer, and a solder stop layer on said conductive layer at least around said solder balls. The conductive layer, further comprises wiring lines. Further, a method of forming the structure is disclosed which uses only two masks for providing terminals for connecting the substrate to integrated circuits and to other substrates or to the printed circuit board and wiring lines. Thus, there is a need for one less metallization layer. The method is applicable to 200 mm wafers and allows two different packaging technologies (C-4 and TAB or wire-bonding) on the same substrate. Thus, packaging of VLSI circuits is improved.