Patents by Inventor Volker Mattern

Volker Mattern has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus for plasma or reactive ion etching and method of etching substrates having a low thermal conductivity
    Patent number: 5304278
    Abstract: Disclosed is a vacuum reactor for etching substrates having a low thermal conductivity to a high degree of etch rate uniformity, wherein the substrates to be etched are arranged in a holder at a predetermined spacing from the cathode to which RF energy is applied. According to a preferred embodiment of the invention, the cathode is raised in the area of the substrate to be etched to within a spacing of about 0.2 mm from the bottom side of the substrate. The cathode is made of aluminium, and is provided in the area of the substrate to be etched with a layer which acts as a black radiator. The heat formed during RIE is removed by radiation, and the radiation reflected from the cathode to the substrate is absorbed by the layer. Also disclosed is a method of etching substrates having a low thermal conductivity, in particular plastic substrates.
    Type: Grant
    Filed: August 24, 1992
    Date of Patent: April 19, 1994
    Assignee: International Business Machines Corporation
    Inventors: Johann Bartha, Thomas Bayer, Johann Greschner, Dieter Kern, Volker Mattern, Roland Stoehr
  • Method of etching substrates having a low thermal conductivity
    Patent number: 5296091
    Abstract: Disclosed is a vacuum reactor for etching substrates having a low thermal conductivity to a high degree of etch rate uniformity, wherein the substrates to be etched are arranged in a holder at a predetermined spacing from the cathode to which RF energy is applied. According to a preferred embodiment of the invention, the cathode is raised in the area of the substrate to be etched to within a spacing of about 0.2 mm from the bottom side of the substrate. The cathode is made of aluminium, and is provided in the area of the substrate to be etched with a layer which acts as a black radiator. The heat formed during RIE is removed by radiation, and the radiation reflected from the cathode to the substrate is absorbed by the layer. Also disclosed is a method of etching substrates having a low thermal conductivity, in particular plastic substrates.
    Type: Grant
    Filed: September 30, 1991
    Date of Patent: March 22, 1994
    Assignee: International Business Machines Corporation
    Inventors: Johann Bartha, Thomas Bayer, Johann Greschner, Dieter Kern, Volker Mattern, Roland Stoehr