Patents by Inventor Volker Sittinger

Volker Sittinger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9039872
    Abstract: A method for producing a transparent and conductive metal oxide layer on a substrate, includes atomizing at least one component of the metal oxide layer by highly ionized, high power pulsed magnetron sputtering to condense on the substrate. The pulses of the magnetron have a peak power density of more than 1.5 kW/cm2, the pulses of the magnetron have a duration of ?200 ?s, and the average increase in current density during ignition of the plasma within an interval, which is ?0.025 ms, is at least 106 A/(ms cm2).
    Type: Grant
    Filed: June 9, 2009
    Date of Patent: May 26, 2015
    Assignee: Fraunhofer-Gesellschaft zur Foerderung der Angewandten Forschung E.V.
    Inventors: Felix Horstmann, Volker Sittinger, Bernd Szyszka
  • Patent number: 8557390
    Abstract: The present invention relates to a glass product, comprising a glass substrate with a transparent and conductive indium tin oxide layer having a covering layer, which forms a redox barrier for the indium tin oxide layer, wherein the indium tin oxide layer is obtained by pulsed, highly ionizing high-power magnetron sputtering (HPPMS) in which—the pulses of the magnetron have a peak power density greater than 1.5 kW/cm2,—the pulses of the magnetron have a time duration that is ?200 ?s, and—the mean current flow density rise upon ignition of the plasma within a time interval that is ?0.025 ms is at least 106 ?(ms cm2), and the indium tin oxide layer has a crystalline structure, in such a way that the (222)-reflection of an X-ray diffraction spectrum after the production of the indium tin oxide layer is shifted relative to the powder spectrum of indium tin oxide by a maximum of 1 degree, preferably by 0.3 degrees to 0.
    Type: Grant
    Filed: June 9, 2009
    Date of Patent: October 15, 2013
    Assignee: Audi AG
    Inventors: Thomas Drescher, Bernd Hangleiter, Joachim Schuetz, Annegret Matthai, Heike Walter, Felix Horstmann, Bernd Szyszka, Volker Sittinger, Wolfgang Werner, Tjhay Weyna Boentoro
  • Publication number: 20130203211
    Abstract: A method coats a substrate with an aluminum-doped zinc oxide. The method includes generating a nucleation coating between 5 nm and 400 nm thick and having zinc oxide or doped zinc oxide, in particular aluminum-doped zinc oxide, on a surface of a substrate by atomizing a solid target. A quasi-epitaxially propagating top coating is generated and contains an aluminum-doped zinc oxide on the nucleation coating and the top coating is wet chemically etched.
    Type: Application
    Filed: December 23, 2010
    Publication date: August 8, 2013
    Inventors: Volker Sittinger, Bernd Szyszka, Wilma Dewald, Frank Säuberlich, Bernd Stannowski
  • Publication number: 20120325295
    Abstract: An arrangement includes a transparent substrate, at least one transparent electrically conductive layer on the substrate. At least one photoelectric device for converting radiation energy into electrical energy can be arranged on the at least one transparent electrically conductive layer. The at least one transparent electrically conductive layer includes at least one first transparent electrically conductive layer and at least one second transparent electrically conductive layer.
    Type: Application
    Filed: April 30, 2012
    Publication date: December 27, 2012
    Applicants: Fraunhofer-Gesellschaft zur Foerderung der Angewandten Forschung E. V., Schueco TF GmbH & Co. KG
    Inventors: Frank Sauberlich, Bernd Stannowski, Tobias Wendelmuth, Volker Sittinger, Bernd Szyszka
  • Publication number: 20120097529
    Abstract: The invention relates to a new basic technology for magnetron sputtering of ceramic layers, in particular for optical applications. The new concept enables the construction of magnetron sputtering sources which, in comparison with the known methods, such as reactive DC-, MF- or RF magnetron sputtering or the magnetron sputtering of ceramic targets, enables significantly improved precision in the deposition of ceramic layers at an exactly defined rate and homogeneity and also with very good reproducibility.
    Type: Application
    Filed: March 25, 2010
    Publication date: April 26, 2012
    Applicant: Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.
    Inventors: Andreas Pflug, Michael Siemers, Volker Sittinger, Bernd Szyszka, Stephan Ulrich
  • Publication number: 20110223415
    Abstract: The present invention relates to a glass product, comprising a glass substrate with a transparent and conductive indium tin oxide layer having a covering layer, which forms a redox barrier for the indium tin oxide layer, wherein the indium tin oxide layer is obtained by pulsed, highly ionizing high-power magnetron sputtering (HPPMS) in which—the pulses of the magnetron have a peak power density greater than 1.5 kW/cm2, —the pulses of the magnetron have a time duration that is ?200 ?s, and—the mean current flow density rise upon ignition of the plasma within a time interval that is ?0.025 ms is at least 106 ?(ms cm2), and the indium tin oxide layer has a crystalline structure, in such a way that the (222)-reflection of an X-ray diffraction spectrum after the production of the indium tin oxide layer is shifted relative to the powder spectrum of indium tin oxide by a maximum of 1 degree, preferably by 0.3 degrees to 0.
    Type: Application
    Filed: June 9, 2009
    Publication date: September 15, 2011
    Inventors: Thomas Drescher, Bernd Hangleiter, Joachim Schuetz, Annegret Matthai, Heike Walter, Felix Horstmann, Bernd Szyszka, Volker Sittinger, Wolfgang Werner, Tjhay Weyna Boentoro
  • Publication number: 20100282598
    Abstract: The invention relates to the control of a reactive high-power pulsed sputter process. The invention particularly relates to a method for controlling a process of the aforementioned kind, wherein a controlled variable is measured and an adjustable variable is modified based on the measured controlled variable in order to adjust the controlled variable to a predetermined setting value. The method according to the invention is characterised by modifying the discharge capacity by varying the pulse frequency of the discharge.
    Type: Application
    Filed: June 20, 2007
    Publication date: November 11, 2010
    Applicant: Fraunhofer-Gesellschaft Zur Foerderung Der Angewan dten Forschung E.V.
    Inventors: Florian Ruske, Volker Sittinger, Bernd Szyszka
  • Publication number: 20100006426
    Abstract: A method for depositing at least one stable, transparent and conductive layer system on chalcopyrite solar cell absorbers. The at least one stable, transparent and conductive layer system may be formed via ionizing PVD (physical vapor deposition) technology by using either high power pulsed magnetron sputtering (HPPMS) or high power impulse magnetron sputtering (HIPIMS).
    Type: Application
    Filed: September 28, 2007
    Publication date: January 14, 2010
    Applicant: FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWAND
    Inventors: Volker Sittinger, Florian Ruske, Bernd Szyszka