Abstract: The invention relates to a method for the one-sided removal of a doped surface layer on rear sides of crystalline silicon solar wafers. In accordance with the object set, doped surface layers should be able to be removed from rear sides of such solar wafers in a cost-effective manner and with a handling which is gentle on the substrate. In addition, the front side should not be modified. In accordance with the invention, an etching gas is directed onto the rear side surface of silicon solar wafers with a plasma atmospheric pressure.

Abstract: A method and an apparatus relate to an ignition an arc between an anode and a cathode of a plasma source which can be used for a substrate surface modification at environmental atmosphere conditions. The cathode is arranged at a spacing from the anode. This method and the apparatus may reduce the effort for the ignition of an arc of a plasma source and to make the ignition process safer. The method is such that a barrier discharge is ignited with a supplied gas by means of two electrodes which are arranged parallel to the longitudinal axis between the anode and the cathode and are connected to a high-voltage generator and are supplied with a radio frequency electric AC voltage on the ignition. When an electric DC voltage is applied to the anode and to the cathode, an arc can thereby be ignited by means of the charge carriers present between the anode and the cathode due to the barrier discharge.

Abstract: The invention relates to an apparatus and to a method of forming thin films on substrate surfaces. It is the object of the invention to provide possibilities with which thin layers can be manufactured on substrate surfaces which have a specific layer material formation with desired properties. The apparatus in accordance with the invention is made such that a feed is present for at least one gaseous precursor, which contributes to the layer formation, at a reaction chamber region above a substrate surface to be coated. A source which is a plasma source and which emits electromagnetic radiation is moreover arranged such that a photolytic activation of atoms and/or molecules of the precursor(s) takes place with the emitted electromagnetic radiation. In this respect, the plasma source should be arranged and should also be operated such that no direct influence of the plasma on the substrate surface and on the precursors resulting in the layer formation takes place.

Abstract: The invention relates to a method for the selective plasmochemical dry-etching of phosphosilicate glass ((SiO2)xP2O5)y) formed on surfaces of silicon wafers. In this respect, it is the object of the invention to provide a cost-effective, efficient, selective possibility which at least reduces manufacturing losses and with which phosphosilicate glass can be removed from silicon wafers. A procedure is followed in the invention that crystalline silicon wafers, whose surface is provided with phosphosilicate glass, are etched in a selective plasmochemical process. In this connection, a plasma formed using a plasma source and an etching gas are directed at atmospheric pressure to the phosphosilicate glass which can thus be removed.

Abstract: The invention relates to a device and a method for the optical detection of substances contained in exhaust gases of chemical processes, wherein exhaust gases are conducted all the way through a channel element that forms an optical measuring section; at the channel element there are two flanges, closed off to the ambient area, and at least one window element through which electromagnetic radiation for the optical detection can be directed from a radiation source to a optical detector through the channel element; a purge gas is fed through the flanges into the channel element, whereby with a purge gas led into one of the flanges a closed laminar purge gas flow is to be formed in the bottom area of the interior of the channel element.

Abstract: The invention relates to a method for the one-sided removal of a doped surface layer on rear sides of crystalline silicon solar wafers. In accordance with the object set, doped surface layers should be able to be removed from rear sides of such solar wafers in a cost-effective manner and with a handling which is gentle on the substrate. In addition, the front side should not be modified. In accordance with the invention, an etching gas is directed onto the rear side surface of silicon solar wafers with a plasma atmospheric pressure.

Abstract: The invention relates to a device and a method for the optical detection of substances contained in exhaust gases of chemical processes, wherein exhaust gases are conducted all the way through a channel element that forms an optical measuring section; at the channel element there are two flanges, closed off to the ambient area, and at least one window element through which electromagnetic radiation for the optical detection can be directed from a radiation source to a optical detector through the channel element; a purge gas is fed through the flanges into the channel element, whereby with a purge gas led into one of the flanges a closed laminar purge gas flow is to be formed in the bottom area of the interior of the channel element.

Abstract: The present invention relates to a method for purifying process waste gases by introducing them into a waste gas purification system that includes a reaction chamber and by post-treating the reaction products that leave the reaction chamber in a washing or sorbtion chamber with an associated washing agent circuit. The type and amount of harmful substances in the process waste gas are continuously measured before the waste gases enter the waste gas purification system. In addition, the type and amount of harmful substances in the reaction products that leave the waste gas purification system are simultaneously determined directly at the exit of the system and the measuring signals are used to regulate the operating parameters of the waste gas purification system.

Abstract: The present invention relates to a method for purifying process waste gases by introducing them into a waste gas purification system that includes a reaction chamber and by post-treating the reaction products that leave the reaction chamber in a washing or sorbtion chamber with an associated washing agent circuit. The type and amount of harmful substances in the process waste gas are continuously measured before the waste gases enter the waste gas purification system. In addition, the type and amount of harmful substances in the reaction products that leave the waste gas purification system are simultaneously determined directly at the exit of the system and the measuring signals are used to regulate the operating parameters of the waste gas purification system.