Patents by Inventor Volodymyr Komarnitskyy
Volodymyr Komarnitskyy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11018252Abstract: A power semiconductor transistor includes a semiconductor body having a front side and a backside with a backside surface. The semiconductor body includes a drift region of a first conductivity type and a field stop region of the first conductivity type. The field stop region is arranged between the drift region and the backside and includes, in a cross-section along a vertical direction from the backside to the front side, a concentration profile of donors of the first conductivity type that has: a first local maximum at a first distance from the backside surface, a front width at half maximum associated with the first local maximum, and a back width at half maximum associated with the first local maximum. The front width at half maximum is smaller than the back width at half maximum and amounts to at least 8% of the first distance.Type: GrantFiled: September 23, 2019Date of Patent: May 25, 2021Assignee: Infineon Technologies AGInventors: Hans Peter Felsl, Moriz Jelinek, Volodymyr Komarnitskyy, Konrad Schraml, Hans-Joachim Schulze
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Publication number: 20200098911Abstract: A power semiconductor transistor includes a semiconductor body having a front side and a backside with a backside surface. The semiconductor body includes a drift region of a first conductivity type and a field stop region of the first conductivity type. The field stop region is arranged between the drift region and the backside and includes, in a cross-section along a vertical direction from the backside to the front side, a concentration profile of donors of the first conductivity type that has: a first local maximum at a first distance from the backside surface, a front width at half maximum associated with the first local maximum, and a back width at half maximum associated with the first local maximum. The front width at half maximum is smaller than the back width at half maximum and amounts to at least 8% of the first distance.Type: ApplicationFiled: September 23, 2019Publication date: March 26, 2020Inventors: Hans Peter Felsl, Moriz Jelinek, Volodymyr Komarnitskyy, Konrad Schraml, Hans-Joachim Schulze
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Patent number: 9859378Abstract: A method of producing a semiconductor device includes providing a semiconductor body having a front side 10-1 and a back side, wherein the semiconductor body includes a drift region having dopants of a first conductivity type and a body region having dopants of a second conductivity type complementary to the first conductivity type, a transition between the drift region and the body region forming a pn-junction. The method further comprises: creating a contact groove in the semiconductor body, the contact groove extending into the body region along a vertical direction pointing from the front side to the back side; and filling the contact groove at least partially by epitaxially growing a semiconductor material within the contact groove, wherein the semiconductor material has dopants of the second conductivity type.Type: GrantFiled: June 15, 2016Date of Patent: January 2, 2018Assignee: Infineon Technologies AGInventors: Wolfgang Wagner, Johannes Baumgartl, Volodymyr Komarnitskyy
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Publication number: 20160365413Abstract: A method of producing a semiconductor device includes providing a semiconductor body having a front side 10-1 and a back side, wherein the semiconductor body includes a drift region having dopants of a first conductivity type and a body region having dopants of a second conductivity type complementary to the first conductivity type, a transition between the drift region and the body region forming a pn-junction. The method further comprises: creating a contact groove in the semiconductor body, the contact groove extending into the body region along a vertical direction pointing from the front side to the back side; and filling the contact groove at least partially by epitaxially growing a semiconductor material within the contact groove, wherein the semiconductor material has dopants of the second conductivity type.Type: ApplicationFiled: June 15, 2016Publication date: December 15, 2016Inventors: Wolfgang Wagner, Johannes Baumgartl, Volodymyr Komarnitskyy
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Patent number: 9362349Abstract: A semiconductor device includes a cell region having at least one device cell, wherein the at least one device cell includes a first device region of a first conductivity type. The semiconductor device further includes a drift region of a second conductivity type adjoining the first device region of the at least one device cell, a doped region of the first conductivity type adjoining the drift region, and charge carrier lifetime reduction means configured to reduce a charge carrier lifetime in the doped region of the first conductivity type.Type: GrantFiled: June 21, 2013Date of Patent: June 7, 2016Assignee: Infineon Technologies AGInventors: Dorothea Werber, Frank Pfirsch, Hans-Joachim Schulze, Carsten Schaeffer, Volodymyr Komarnitskyy, Anton Mauder, Holger Schulze, Gerhard Miller
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Patent number: 9240450Abstract: A semiconductor device includes a semiconductor body including a drift zone of a first conductivity type, an emitter region of a second, complementary conductivity type configured to inject charge carriers into the drift zone, and an emitter electrode. The emitter electrode includes a metal silicide layer in direct ohmic contact with the emitter region. A net impurity concentration in a portion of the emitter region directly adjoining the metal silicide layer is at most 1×1017 cm?3.Type: GrantFiled: February 12, 2014Date of Patent: January 19, 2016Assignee: Infineon Technologies AGInventors: Dorothea Werber, Volodymyr Komarnitskyy, Thomas Gutt
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Patent number: 9214521Abstract: A semiconductor device includes a first emitter region of a first conductivity type, a second emitter region of a second conductivity type complementary to the first type, a drift region of the second conductivity type, and a first electrode. The first and second emitter regions are arranged between the drift region and first electrode and each connected to the first electrode. A device cell of a cell region includes a body region of the first conductivity type adjoining the drift region, a source region of the second conductivity type adjoining the body region, and a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric. A second electrode is electrically connected to the source and body regions. A parasitic region of the first conductivity type is disposed outside the cell region and includes at least one section with charge carrier lifetime reduction means.Type: GrantFiled: June 21, 2012Date of Patent: December 15, 2015Assignee: Infineon Technologies AGInventors: Dorothea Werber, Frank Pfirsch, Hans-Joachim Schulze, Carsten Schaeffer, Volodymyr Komarnitskyy, Anton Mauder
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Publication number: 20150228723Abstract: A semiconductor device includes a semiconductor body including a drift zone of a first conductivity type, an emitter region of a second, complementary conductivity type configured to inject charge carriers into the drift zone, and an emitter electrode. The emitter electrode includes a metal silicide layer in direct ohmic contact with the emitter region. A net impurity concentration in a portion of the emitter region directly adjoining the metal silicide layer is at most 1×1017 cm?3.Type: ApplicationFiled: February 12, 2014Publication date: August 13, 2015Inventors: Dorothea Werber, Volodymyr Komarnitskyy, Thomas Gutt
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Publication number: 20140015007Abstract: A semiconductor device includes a cell region having at least one device cell, wherein the at least one device cell includes a first device region of a first conductivity type. The semiconductor device further includes a drift region of a second conductivity type adjoining the first device region of the at least one device cell, a doped region of the first conductivity type adjoining the drift region, and charge carrier lifetime reduction means configured to reduce a charge carrier lifetime in the doped region of the first conductivity type.Type: ApplicationFiled: June 21, 2013Publication date: January 16, 2014Inventors: Dorothea Werber, Frank Pfirsch, Hans-Joachim Schulze, Carsten Schaeffer, Volodymyr Komarnitskyy, Anton Mauder, Holger Schulze, Gerhard Miller
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Publication number: 20130341674Abstract: A semiconductor device includes a first emitter region of a first conductivity type, a second emitter region of a second conductivity type complementary to the first type, a drift region of the second conductivity type, and a first electrode. The first and second emitter regions are arranged between the drift region and first electrode and each connected to the first electrode. A device cell of a cell region includes a body region of the first conductivity type adjoining the drift region, a source region of the second conductivity type adjoining the body region, and a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric. A second electrode is electrically connected to the source and body regions. A parasitic region of the first conductivity type is disposed outside the cell region and includes at least one section with charge carrier lifetime reduction means.Type: ApplicationFiled: June 21, 2012Publication date: December 26, 2013Applicant: INFINEON TECHNOLOGIES AGInventors: Dorothea Werber, Frank Pfirsch, Hans-Joachim Schulze, Carsten Schaeffer, Volodymyr Komarnitskyy, Anton Mauder