Abstract: A method to determine an electronic signature characteristic of a fluid medium comprises making a reception surface for receiving the fluid medium on at least one face of the substrate, putting the fluid medium into contact with the reception surface in order to make an interface between the substrate and the fluid medium, lighting at least one zone of the interface through the fluid medium with a pulsed light beam in order to create photogenerated electric charges, using a microwave reflectometer to measure the lifetime durations of the photogenerated electric charges, which durations have respective values that depend on the recombination rate at the interface between the substrate and the fluid medium, creating a matrix of measured lifetime duration values for the photogenerated electric charges, and using the matrix to determine the electronic signature characteristic of the fluid medium.

Abstract: The invention relates to a method of detecting the interaction between at least one entity and a dielectric layer containing different electron levels in the energy band gap of the dielectric layer, the method comprising the following steps: a) depositing the entity on the dielectric layer; b) subjecting the dielectric layer and the entity deposited thereon to exciting electromagnetic radiation that does not give rise to observable luminescence in the entity itself under the conditions implemented in step c); and c) detecting the luminescence of the dielectric layer, in which the radiative and non-radiative electron transitions between the energy levels of the band gap have been influenced as a result of its interaction with the entity.

Abstract: A device for characterizing a fluid medium with the help of a photoelectric transducer comprises at least one semiconductor substrate possessing at least one space charge zone and presenting a reception surface for receiving the fluid medium in order to constitute an interface between the substrate and the fluid medium, a production system for producing a spot light beam that is amplitude-modulated and that lights at least one zone of the interface through the fluid medium, a measurement system for measuring values of a photoelectric magnitude delivered while performing the lighting so as to create a matrix of values of the photoelectric magnitude, and a processor system for processing values of the photoelectric magnitude delivered by the measurement system and adapted to use the matrix to determine an electronic signature characteristic of the fluid medium.

Abstract: A process for manufacturing silicon-based nanoparticles by electrochemical etching of a substrate, wherein the substrate is a metallurgical-grade or upgraded metallurgical-grade silicon, the substrate including an impurity content greater than 0.01%.

Abstract: A method to determine an electronic signature characteristic of a fluid medium comprises making a reception surface for receiving the fluid medium on at least one face of the substrate, putting the fluid medium into contact with the reception surface in order to make an interface between the substrate and the fluid medium, lighting at least one zone of the interface through the fluid medium with a pulsed light beam in order to create photogenerated electric charges, using a microwave reflectometer to measure the lifetime durations of the photogenerated electric charges, which durations have respective values that depend on the recombination rate at the interface between the substrate and the fluid medium, creating a matrix of measured lifetime duration values for the photogenerated electric charges, and using the matrix to determine the electronic signature characteristic of the fluid medium.

Abstract: A device for characterizing a fluid medium with the help of a photoelectric transducer comprises at least one semiconductor substrate possessing at least one space charge zone and presenting a reception surface for receiving the fluid medium in order to constitute an interface between the substrate and the fluid medium, a production system for producing a spot light beam that is amplitude-modulated and that lights at least one zone of the interface through the fluid medium, a measurement system for measuring values of a photoelectric magnitude delivered while performing the lighting so as to create a matrix of values of the photoelectric magnitude, and a processor system for processing values of the photoelectric magnitude delivered by the measurement system and adapted to use the matrix to determine an electronic signature characteristic of the fluid medium.

Abstract: The invention relates to a process for modifying the properties of a thin layer (1) formed on the surface of a support (2) forming a substrate (3) utilized in the field of microelectronics, nanoelectronics or microtechnology, nanotechnology, characterized in that it consists of: forming at least one thin layer (1) on a nanostructured support with high specific surface (2), and treating the nanostructured support with high specific surface (2) to generate internal strains in the support causing its deformation at least in the plane of the thin layer so as to ensure corresponding deformation of the thin layer to modify its properties.

Abstract: The invention relates to a method of detecting the interaction between at least one entity and a dielectric layer containing different electron levels in the energy band gap of the dielectric layer, the method comprising the following steps: a) depositing the entity on the dielectric layer; b) subjecting the dielectric layer and the entity deposited thereon to exciting electromagnetic radiation that does not give rise to observable luminescence in the entity itself under the conditions implemented in step c); and c) detecting the luminescence of the dielectric layer, in which the radiative and non-radiative electron transitions between the energy levels of the band gap have been influenced as a result of its interaction with the entity.

Abstract: A process for manufacturing silicon-based nanoparticles by electrochemical etching of a substrate, wherein the substrate is a metallurgical-grade or upgraded metallurgical-grade silicon, the substrate including an impurity content greater than 0.01%.

Abstract: The present invention relates to SiC nanoparticles to be used in the context of cancer treatment, said nanoparticles preferably having a size less than 100 nm.

Abstract: The invention relates to a hydrogen reservoir comprising a substance suitable for storing hydrogen wherein said substance is made up of nano-structured silicon. It also relates to a process for manufacturing and a method for use of this hydrogen reservoir.

Abstract: The invention relates to a process for modifying the properties of a thin layer (1) formed on the surface of a support (2) forming a substrate (3) utilised in the field of microelectronics, nanoelectronics or microtechnology, nanotechnology, characterised in that it consists of: forming at least one thin layer (1) on a nanostructured support with specific upper surface (2), and treating the nanostructured support with specific upper surface (2) to generate internal strains in the support causing its deformation at least in the plane of the thin layer so as to ensure corresponding deformation of the thin layer to modify its properties.

Abstract: The invention relates to a process for modifying the properties of a thin layer (1) formed on the surface of a support (2) forming a substrate (3) utilised in the field of microelectronics, nanoelectronics or microtechnology, nanotechnology, characterised in that it consists of: forming at least one thin layer (1) on a nanostructured support with specific upper surface (2), and treating the nanostructured support with specific upper surface (2) to generate internal strains in the support causing its deformation at least in the plane of the thin layer so as to ensure corresponding deformation of the thin layer to modify its properties.

Abstract: The invention relates to a hydrogen reservoir comprising a substance suitable for storing hydrogen wherein said substance is made up of nano-structured silicon. It also relates to a process for manufacturing and a method for use of this hydrogen reservoir.

Abstract: The invention relates to a process for modifying the properties of a thin layer (1) formed on the surface of a support (2) forming a substrate (3) utilised in the field of microelectronics, nanoelectronics or microtechnology, nanotechnology, characterised in that it consists of: forming at least one thin layer (1) on a nanostructured support with specific upper surface (2), and treating the nanostructured support with specific upper surface (2) to generate internal strains in the support causing its deformation at least in the plane of the thin layer so as to ensure corresponding deformation of the thin layer to modify its properties.