Patents by Inventor Vrashank Gurudatta Shukla

Vrashank Gurudatta Shukla has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11276688
    Abstract: An electronic device includes a first-conductivity-type substrate and a second-conductivity-type epitaxial layer having a first dopant concentration. A first substrate region includes a second-conductivity-type buried layer and is enclosed by a first deep isolation structure. Within the first substrate region are a first doped region having the second conductivity type and a dopant concentration greater than the first dopant concentration and a second doped region having the first conductivity type. A second substrate region includes a first-conductivity-type buried layer and is enclosed by a second deep isolation structure. Within the second substrate region is a third doped region having the second conductivity type and a dopant concentration greater than the first dopant concentration.
    Type: Grant
    Filed: June 3, 2019
    Date of Patent: March 15, 2022
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Vrashank Gurudatta Shukla, Mark Benjamin Welty, Lifang Lou
  • Publication number: 20200381424
    Abstract: An electronic device includes a first-conductivity-type substrate and a second-conductivity-type epitaxial layer having a first dopant concentration. A first substrate region includes a second-conductivity-type buried layer and is enclosed by a first deep isolation structure. Within the first substrate region are a first doped region having the second conductivity type and a dopant concentration greater than the first dopant concentration and a second doped region having the first conductivity type. A second substrate region includes a first-conductivity-type buried layer and is enclosed by a second deep isolation structure. Within the second substrate region is a third doped region having the second conductivity type and a dopant concentration greater than the first dopant concentration.
    Type: Application
    Filed: June 3, 2019
    Publication date: December 3, 2020
    Inventors: Vrashank Gurudatta Shukla, Mark Benjamin Welty, Lifang Lou
  • Patent number: 8191027
    Abstract: An aspect of the present invention validates ESD compliance by examining netlist data generated from a schematic level design of an integrated circuit. Routing and placement may be performed only after confirming that whether each protected circuit (having exposure to ESD current, without the protection circuit) is protected by an appropriate protection circuit. As a result, the design cycle time may be reduced. According to another aspect of the present invention, layout guidelines for each protection circuit is also considered in performing the routing and placement. As a result, the number of iterations in a design cycle may be reduced.
    Type: Grant
    Filed: October 4, 2007
    Date of Patent: May 29, 2012
    Assignee: Texas Instruments Incorporated
    Inventors: Vrashank Gurudatta Shukla, James Garrett Homack, John Eric Kunz
  • Publication number: 20090094568
    Abstract: An aspect of the present invention validates ESD compliance by examining netlist data generated from a schematic level design of an integrated circuit. Routing and placement may be performed only after confirming that whether each protected circuit (having exposure to ESD current, without the protection circuit) is protected by an appropriate protection circuit. As a result, the design cycle time may be reduced. According to another aspect of the present invention, layout guidelines for each protection circuit is also considered in performing the routing and placement. As a result, the number of iterations in a design cycle may be reduced.
    Type: Application
    Filed: October 4, 2007
    Publication date: April 9, 2009
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Vrashank Gurudatta Shukla, James Garrett Homack, John Eric Kunz