Abstract: An x-ray imaging device can include an x-ray detector and an optical-blocking filter. The x-ray detector has an entrance-window surface for receiving x-rays, at least one side surface, and a back surface facing in an opposite direction from the entrance-window surface. The optical-blocking filter is deposited on and fully covers at least the entrance-window surface and the side surface of the x-ray detector, wherein the optical-blocking filter blocks visible, ultraviolet, and near-infrared light.

Abstract: An x-ray imaging device can include an x-ray detector and an optical-blocking filter. The x-ray detector has an entrance-window surface for receiving x-rays, at least one side surface, and a back surface facing in an opposite direction from the entrance-window surface. The optical-blocking filter is deposited on and fully covers at least the entrance-window surface and the side surface of the x-ray detector, wherein the optical-blocking filter blocks visible, ultraviolet, and near-infrared light.

Abstract: In accordance with the invention, an electrically conducting charge transfer channel is formed in a semiconductor substrate and an electrically insulating layer is formed on a surface of the substrate; a layer of gate electrode material is formed on the insulating layer. On the gate material layer is formed a first patterned masking layer having apertures that expose regions of the underlying gate material layer that are to form gate electrodes, and the first-pattern-exposed regions of the gate material layer are electrically doped. In addition, on the gate material layer is formed a second patterned masking layer having apertures that expose regions of the underlying gate material layer that are to form gaps between gate electrodes, and the second-pattern-exposed regions of the gate material layer are etched.

Abstract: A method for reducing the field dependence of an off-state current flow condition in a field-effect transistor having a source electrode, a drain electrode and a gate electrode, includes the steps of: applying a far off-state bias between the drain electrode and the gate electrode to drive a conduction channel in the field effect transistor into a far off-state; and applying a far off-state bias between the source electrode and the gate electrode to again drive the conduction channel into a far off-state; wherein both applying steps cause application of the far off-state bias for a sufficient time to reduce gate voltage dependency of off-state current flow in the conduction channel during a period when an off-state potential is applied to the gate electrode.