Patents by Inventor W. B. Shieh

W. B. Shieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High density plasma chemical vapor deposition process
    Patent number: 7514014
    Abstract: A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.
    Type: Grant
    Filed: April 11, 2000
    Date of Patent: April 7, 2009
    Assignee: United Microelectronics Corporation
    Inventors: Chih-Chien Liu, Ta-Shan Tseng, W. B. Shieh, J. Y. Wu, Water Lur, Shih-Wei Sun
  • High density plasma chemical vapor deposition process
    Publication number: 20060099824
    Abstract: A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.
    Type: Application
    Filed: December 22, 2005
    Publication date: May 11, 2006
    Inventors: Chih-Chien Liu, Ta-Shan Tseng, W.B. Shieh, J.Y. Wu, Water Lur, Shih-Wei Sun
  • High density plasma chemical vapor deposition process
    Publication number: 20050003671
    Abstract: A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.
    Type: Application
    Filed: July 29, 2004
    Publication date: January 6, 2005
    Inventors: Chih-Chien Liu, Ta-Shan Tseng, W.B. Shieh, J.Y. Wu, Water Lur, Shih-Wei Sun
  • High density plasma chemical vapor deposition process
    Publication number: 20020030033
    Abstract: A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.
    Type: Application
    Filed: November 20, 2001
    Publication date: March 14, 2002
    Inventors: Chih-Chien Liu, Ta-Shan Tseng, W.B. Shieh, J.Y. Wu, Water Lur, Shih-Wei Sun