Patents by Inventor W. Brock Alexander

W. Brock Alexander has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleation
    Publication number: 20030196587
    Abstract: The present invention relates to a process for growing a single crystal silicon ingot, which contains an axially symmetric region having a predominant intrinsic point defect and which is substantially free of agglomerated intrinsic point defects in that region. The process comprising cooling the ingot from the temperature of solidification to a temperature of less than 800° C. and, as part of said cooling step, quench cooling a region of the constant diameter portion of the ingot having a predominant intrinsic point defect through the temperature of nucleation for the agglomerated intrinsic point defects for the intrinsic point defects which predominate in the region.
    Type: Application
    Filed: May 6, 2003
    Publication date: October 23, 2003
    Applicant: MEMC Electronic Materials, Inc.
    Inventors: Kirk D. McCallum, W. Brock Alexander, Mohsen Banan, Robert J. Falster, Joseph C. Holzer, Bayard K. Johnson, Chang Bum Kim, Steven L. Kimbel, Zheng Lu, Paolo Mutti, Vladimir V. Voronkov, Luciano Mule'Stagno, Jeffrey L. Libbert