Patents by Inventor W. Robert Hatfield

W. Robert Hatfield has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5108730
    Abstract: Method of low temperature start-up of ammonia oxidation plants by passing hydrogen and oxygen over platinum containing gauzes bearing a platinum coating having a surface area in excess of about 50 cm.sup.2 /g, thereby heating them to temperatures which are sufficient for catalytic oxidation of ammonia.
    Type: Grant
    Filed: August 6, 1986
    Date of Patent: April 28, 1992
    Assignee: Engelhard Corporation
    Inventors: Hyo C. Lee, Robert J. Farrauto, W. Robert Hatfield
  • Patent number: 4863893
    Abstract: Platinum-rhodium and platinum-palladium-rhodium gauzes bearing a high surface area coating (in excess of 50 cm.sup.2 /g) of platinum ease initiation of ammonia oxidation.
    Type: Grant
    Filed: August 6, 1986
    Date of Patent: September 5, 1989
    Assignee: Engelhard Corporation
    Inventors: Robert J. Farrauto, Hyo C. Lee, W. Robert Hatfield
  • Patent number: 4526614
    Abstract: Improved recovery of platinum lost from the catalyst gauze in a nitric acid plant is obtained by using palladium containing recovery gauzes configured to enhance the mass transfer characteristics of the system.
    Type: Grant
    Filed: August 2, 1982
    Date of Patent: July 2, 1985
    Assignee: Engelhard Corporation
    Inventors: Bahjat S. Beshty, W. Robert Hatfield, Hyo C. Lee, Ronald M. Heck, Thomas H. Hsiung
  • Patent number: 4412859
    Abstract: Improved recovery of platinum lost from the catalyst gauze in a nitric acid plant is obtained by using palladium containing recovery gauzes configured to enhance the mass transfer characteristics of the system.
    Type: Grant
    Filed: August 2, 1982
    Date of Patent: November 1, 1983
    Assignee: Engelhard Corporation
    Inventors: W. Robert Hatfield, Ronald M. Heck, Thomas H. Hsiung