Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.

Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.

Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.

Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.

Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.

Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.

Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.

Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.

Abstract: Embodiments herein relate to segmenting and pinning a first non-volatile memory to store cache information. In an embodiment, the first non-volatile memory is divided into a plurality of segments. Then, a first type of software of a plurality of types of software is pinned to a first segment of the plurality of segments. The first pinned segment stores the cache information associated with the first type of software.

Abstract: A computing device includes, a memory component, a memory module including memory resistors, and a virtualization module. The virtualization module intercepts communication between an application and a memory component and directs the communication to the memory module including memory resistors. The virtualization module directs communication from the memory module to the application.

Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.

Abstract: Example embodiments relate to use of a virtual machine image for sharing Internet access available to a mobile computing device. In example embodiments, a virtual machine image maintained on a storage device of a mobile computing device is received in a client computing device. A guest operating system (OS) contained in the virtual machine image may then be executed on the client computing device. Network data may then be exchanged between the guest OS and the mobile computing device over an interface between the client computing device and the mobile computing device.

Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.

Abstract: Systems and methods of accelerating delivery of remote content are disclosed. An example method includes monitoring usage of a client for content at a remote source over time to predict client access to content. The method also includes prefetching related content from the remote source based on the usage by the client. The method also includes delivering the prefetched related content to the client if the client requests access to corresponding content at the remote source.

Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.

Abstract: Embodiments of the present invention disclose a system and method for remote touch detection. According to one embodiment, an infrared light source is projected across a front surface of a display via at least one light emitting device. Furthermore, an infrared signal is transmitted in a direction of the front surface of the display via a remote pointing device. A surface target position is then determined based on measurement data caused by disruption of a portion of the infrared light source of the light emitting device by either the infrared signal or a physical touch from a user.

Abstract: A computing device includes, a memory component, a memory module including memory resistors, and a virtualization module. The virtualization module intercepts communication between an application and a memory component and directs the communication to the memory module including memory resistors. The virtualization module directs communication from the memory module to the application.

Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.

Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.

Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.