Patents by Inventor Wade J. Hodge
Wade J. Hodge has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8853043Abstract: A heterojunction bipolar transistor (HBT), an integrated circuit (IC) chip including at least one HBT and a method of forming the IC. The HBT includes an extrinsic base with one or more buried interstitial barrier layer. The extrinsic base may be heavily doped with boron and each buried interstitial barrier layer is doped with a dopant containing carbon, e.g., carbon or SiGe:C. The surface of the extrinsic base may be silicided.Type: GrantFiled: September 11, 2012Date of Patent: October 7, 2014Assignee: International Business Machines CorporationInventors: Wade J. Hodge, Alvin J. Joseph, Rajendran Krishnasamy, Qizhi Liu, Bradley A. Orner
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Publication number: 20130005108Abstract: A heterojunction bipolar transistor (HBT), an integrated circuit (IC) chip including at least one HBT and a method of forming the IC. The HBT includes an extrinsic base with one or more buried interstitial barrier layer. The extrinsic base may be heavily doped with boron and each buried interstitial barrier layer is doped with a dopant containing carbon, e.g., carbon or SiGe:C. The surface of the extrinsic base may be silicided.Type: ApplicationFiled: September 11, 2012Publication date: January 3, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Wade J. Hodge, Alvin J. Joseph, Rajendran Krishnasamy, Qizhi Liu, Bradley A. Orner
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Patent number: 8299500Abstract: A heterojunction bipolar transistor (HBT), an integrated circuit (IC) chip including at least one HBT and a method of forming the IC. The HBT includes an extrinsic base with one or more buried interstitial barrier layer. The extrinsic base may be heavily doped with boron and each buried interstitial barrier layer is doped with a dopant containing carbon, e.g., carbon or SiGe:C. The surface of the extrinsic base may be silicided.Type: GrantFiled: August 23, 2005Date of Patent: October 30, 2012Assignee: International Business Machines CorporationInventors: Wade J. Hodge, Alvin J. Joseph, Rajendran Krishnasamy, Qizhi Liu, Bradley A. Orner
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Patent number: 7413967Abstract: A method for determining a SiGe deposition condition so as to improve yield of a semiconductor structure. Fabrication of the semiconductor structure starts with a single-crystal silicon (Si) layer. Then, first and second shallow trench isolation (STI) regions are formed in the single-crystal Si layer. The STI regions sandwich and define a first single-crystal Si region. Next, silicon-germanium (SiGe) mixture is deposited on top of the structure in a SiGe deposition condition so as to grow (i) a second single-crystal silicon region grows up from the top surface of the first single-crystal silicon region and (ii) first and second polysilicon regions from the top surfaces of the first and second STI regions, respectively. By increasing SiGe deposition temperature and/or lowering precursor flow rate until the resulting yield is within a pre-specified range, a satisfactory SiGe deposition condition can be determined for mass production of the structure.Type: GrantFiled: August 29, 2006Date of Patent: August 19, 2008Assignee: International Business Machines CorporationInventors: Mark D. Dupuis, Wade J. Hodge, Daniel T. Kelly, Ryan W. Wuthrich
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Patent number: 7118995Abstract: A method for determining a SiGe deposition condition so as to improve yield of a semiconductor structure. Fabrication of the semiconductor structure starts with a single-crystal silicon (Si) layer. Then, first and second shallow trench isolation (STI) regions are formed in the single-crystal Si layer. The STI regions sandwich and define a first single-crystal Si region. Next, silicon-germanium (SiGe) mixture is deposited on top of the structure in a SiGe deposition condition so as to grow (i) a second single-crystal silicon region grows up from the top surface of the first single-crystal silicon region and (ii) first and second polysilicon regions from the top surfaces of the first and second STI regions, respectively. By increasing SiGe deposition temperature and/or lowering precursor flow rate until the resulting yield is within a pre-specified range, a satisfactory SiGe deposition condition can be determined for mass production of the structure.Type: GrantFiled: May 19, 2004Date of Patent: October 10, 2006Assignee: International Business Machines CorporationInventors: Mark D. Dupuis, Wade J. Hodge, Daniel T. Kelly, Ryan W. Wuthrich
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Patent number: 6887797Abstract: An apparatus and method of forming an oxynitride insulating layer on a substrate performed by putting the substrate at a first temperature within the main chamber of a furnace, exposing the substrate to a nitrogen containing gas at a second temperature which is higher than the first temperature, and growing the oxynitride layer on the substrate within the main chamber in the presence of post-combusted gases. The higher temperature nitrogen containing gases are combusted in a chamber outside the main chamber. The higher temperature is in the range of 800 to 1200° C., and preferably 950° C. In a second embodiment, distributed N2O gas injectors within the main chamber deliver the nitrogen containing gas. The nitrogen containing gas is pre-heated outside the chamber. The nitrogen containing gas is then delivered to a gas manifold that splits the gas flow and directs the gas to a number of gas injectors, preferably two to four injectors within the main process tube.Type: GrantFiled: July 19, 2002Date of Patent: May 3, 2005Assignee: International Business Machines CorporationInventors: Douglas A. Buchanan, Evgeni P. Gousev, Carol J. Heenan, Wade J. Hodge, Steven M. Shank, Patrick R. Varekamp
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Publication number: 20020182888Abstract: An apparatus and method of forming an oxynitride insulating layer on a substrate performed by putting the substrate at a first temperature within the main chamber of a furnace, exposing the substrate to a nitrogen containing gas at a second temperature which is higher than the first temperature, and growing the oxynitride layer on the substrate within the main chamber in the presence of post-combusted gases. The higher temperature nitrogen containing gases are combusted in a chamber outside the main chamber. The higher temperature is in the range of 800 to 1200° C., and preferably 950° C. In a second embodiment, distributed N2O gas injectors within the main chamber deliver the nitrogen containing gas. The nitrogen containing gas is pre-heated outside the chamber. The nitrogen containing gas is then delivered to a gas manifold that splits the gas flow and directs the gas to a number of gas injectors, preferably two to four injectors within the main process tube.Type: ApplicationFiled: July 19, 2002Publication date: December 5, 2002Applicant: International Business Machines CorporationInventors: Douglas A. Buchanan, Evgeni P. Gousev, Carol J. Heenan, Wade J. Hodge, Steven M. Shank, Patrick R. Varekamp
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Publication number: 20020127872Abstract: An apparatus and method of forming an oxynitride insulating layer on a substrate performed by putting the substrate at a first temperature within the main chamber of a furnace, exposing the substrate to a nitrogen containing gas at a second temperature which is higher than the first temperature, and growing the oxynitride layer on the substrate within the main chamber in the presence of post-combusted gases. The higher temperature nitrogen containing gases are combusted in a chamber outside the main chamber. The higher temperature is in the range of 800 to 1200° C., and preferably 950° C. In a second embodiment, distributed N2O gas injectors within the main chamber deliver the nitrogen containing gas. The nitrogen containing gas is pre-heated outside the chamber. The nitrogen containing gas is then delivered to a gas manifold that splits the gas flow and directs the gas to a number of gas injectors, preferably two to four injectors within the main process tube.Type: ApplicationFiled: June 22, 2001Publication date: September 12, 2002Applicant: International Business Machines CorporationInventors: Douglas A. Buchanan, Evgeni P. Gousev, Carol J. Heenan, Wade J. Hodge, Steven M. Shank, Patrick R. Varekamp
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Patent number: 6436196Abstract: An apparatus and method of forming an oxynitride insulating layer on a substrate performed by putting the substrate at a first temperature within the main chamber of a furnace, exposing the substrate to a nitrogen containing gas at a second temperature which is higher than the first temperature, and growing the oxynitride layer on the substrate within the main chamber in the presence of post-combusted gases. The higher temperature nitrogen containing gases are combusted in a chamber outside the main chamber. The higher temperature is in the range of 800 to 1200° C., and preferably 950° C. In a second embodiment, distributed N2O gas injectors within the main chamber deliver the nitrogen containing gas. The nitrogen containing gas is pre-heated outside the chamber. The nitrogen containing gas is then delivered to a gas manifold that splits the gas flow and directs the gas to a number of gas injectors, preferably two to four injectors within the main process tube.Type: GrantFiled: June 22, 2001Date of Patent: August 20, 2002Assignee: International Business Machines CorporationInventors: Douglas A. Buchanan, Evgeni P. Gousev, Carol J. Heenan, Wade J. Hodge, Steven M. Shank, Patrick R. Varekamp
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Patent number: 6346487Abstract: An apparatus and method of forming an oxynitride insulating layer on a substrate performed by putting the substrate at a first temperature within the main chamber of a furnace, exposing the substrate to a nitrogen containing gas at a second temperature which is higher than the first temperature, and growing the oxynitride layer on the substrate within the main chamber in the presence of post-combusted gases. The higher temperature nitrogen containing gases are combusted in a chamber outside the main chamber. The higher temperature is in the range of 800 to 1200° C., and preferably 950° C. In a second embodiment, distributed N2O gas injectors within the main chamber deliver the nitrogen containing gas. The nitrogen containing gas is pre-heated outside the chamber. The nitrogen containing gas is then delivered to a gas manifold that splits the gas flow and directs the gas to a number of gas injectors, preferably two to four injectors within the main process tube.Type: GrantFiled: March 10, 2001Date of Patent: February 12, 2002Assignee: International Business Machines CorporationInventors: Douglas A. Buchanan, Evgeni P. Gousev, Carol J. Heenan, Wade J. Hodge, Steven M. Shank, Patrick R. Varekamp