Abstract: A digital to analog converter. The digital to analog converter including a current mirror comprising N stages, each stage comprising 2n?1 dual gate transistors where N is a positive integer equal to or greater than one and n is an integer between 0 and N?1 for each of the N-stages, values of n being different for each stage of the N stages; an output, every dual gate transistor of each stage of the N stages connected to the output; N inputs, every input of the N inputs connected to a different stage of the N stages, any particular input of the N inputs connected to every dual gate transistor of a stage to which the particular input is connected to; and a current reference circuit, comprising a reference current source and a reference dual gate transistor, each stage of the N stages connected to the current reference circuit.

Abstract: A design structure embodied in a machine readable medium, the design structure including a current mirror including N stages, each stage comprising 2n?1 dual gate transistors where N is a positive integer equal to or greater than one and n is an integer between 0 and N?1 for each of the N-stages, values of n being different for each stage of the N stages; an output, every dual gate transistor of each stage of the N stages connected to the output; N inputs, every input of the N inputs connected to a different stage of the N stages, any particular input of the N inputs connected to every dual gate transistor of a stage to which the particular input is connected to; and a current reference circuit, comprising a reference current source and a reference dual gate transistor, each stage of the N stages connected to the current reference circuit.

Abstract: A method, device and system for monitoring ionizing radiation, and design structures for ionizing radiation monitoring devices. The method including: collecting an ionizing radiation induced charge collected by the depletion region of a diode formed in a silicon layer below an oxide layer buried below a surface of a silicon substrate; and coupling a cathode of the diode to a precharged node of a clocked logic circuit such that the ionizing radiation induced charge collected by a depletion region of the diode will discharge the precharged node and change an output state of the clocked logic circuit.

Abstract: A digital to analog converter. The digital to analog converter including a current mirror comprising N stages, each stage comprising 2n?1 dual gate transistors where N is a positive integer equal to or greater than one and n is an integer between 0 and N?1 for each of the N-stages, values of n being different for each stage of the N stages; an output, every dual gate transistor of each stage of the N stages connected to the output; N inputs, every input of the N inputs connected to a different stage of the N stages, any particular input of the N inputs connected to every dual gate transistor of a stage to which the particular input is connected to; and a current reference circuit, comprising a reference current source and a reference dual gate transistor, each stage of the N stages connected to the current reference circuit.

Abstract: A design structure embodied in a machine readable medium, the design structure including a current mirror including N stages, each stage comprising 2n-1 dual gate transistors where N is a positive integer equal to or greater than one and n is an integer between 0 and N?1 for each of the N-stages, values of n being different for each stage of the N stages; an output, every dual gate transistor of each stage of the N stages connected to the output; N inputs, every input of the N inputs connected to a different stage of the N stages, any particular input of the N inputs connected to every dual gate transistor of a stage to which the particular input is connected to; and a current reference circuit, comprising a reference current source and a reference dual gate transistor, each stage of the N stages connected to the current reference circuit.

Abstract: A device and system for monitoring ionizing radiation. The device including: a diode formed in a silicon layer below an oxide layer buried below a surface of a silicon substrate; and a cathode of the diode coupled to a precharged node of a clocked logic circuit, an output state of the clocked logic circuit responsive a change in state of the precharged node, a state of the precharged node responsive to ionizing radiation induced charge collected by a depletion region of the diode and collected in the cathode.

Abstract: A method, device and system for monitoring ionizing radiation. The method including: collecting an ionizing radiation induced charge collected by the depletion region of a diode formed in a silicon layer below an oxide layer buried below a surface of a silicon substrate; and coupling a cathode of the diode to a precharged node of a clocked logic circuit such that the ionizing radiation induced charge collected by a depletion region of the diode will discharge the precharged node and change an output state of the clocked logic circuit.

Abstract: A method, device and system for monitoring ionizing radiation. The method including: collecting an ionizing radiation induced charge collected by the depletion region of a diode formed in a silicon layer below an oxide layer buried below a surface of a silicon substrate; and coupling a cathode of the diode to a precharged node of a clocked logic circuit such that the ionizing radiation induced charge collected by a depletion region of the diode will discharge the precharged node and change an output state of the clocked logic circuit.

Abstract: A resettable fuse device is fabricated on one surface of a semiconductor substrate (10) and includes: a gate region (20) having first and second ends; a source node (81) formed in proximity to the first end of the gate region; an extension region (52) formed to connect the source node to the first end of the gate region; and a drain node (80) formed in proximity to the second end of the gate region and separated from the gate region by a distance (D) such that upon application of a predetermined bias voltage to the drain node a connection between the drain node and the second end of the gate region is completed by junction depletion. A gate dielectric (30) and a gate electrode (40) are formed over the gate region. Current flows between the source node and the drain node when the predetermined bias is applied to both the drain node and the gate electrode.

Abstract: The present invention relates to metal-insulator-metal (MIM) capacitors and field effect transistors (FETs) formed on a semiconductor substrate. The FETs are formed in Front End of Line (FEOL) levels below the MIM capacitors which are formed in upper Back End of Line (BEOL) levels. An insulator layer is selectively formed to encapsulate at least a top plate of the MIM capacitor to protect the MIM capacitor from damage due to process steps such as, for example, reactive ion etching. By selective formation of the insulator layer on the MIM capacitor, openings in the inter-level dielectric layers are provided so that hydrogen and/or deuterium diffusion to the FETs can occur.

Abstract: A ring oscillator (and test circuit incorporating the ring oscillator and test method therefor) includes an odd number of elements interconnected in a serially-connected infinite loop, each oscillator element having an associated programmable delay feature. The circuit can be used to measure effects of Negative Bias Temperature Instability (NBTI) in p-channel MOSFETs (PFETs).

Abstract: A ring oscillator (and test circuit incorporating the ring oscillator and test method therefor) includes an odd number of elements interconnected in a serially-connected infinite loop, each oscillator element having an associated programmable delay feature. The circuit can be used to measure effects of Negative Bias Temperature Instability (NBTI) in p-channel MOSFETs (PFETs).