Abstract: A semiconductor package including a lead frame, an Ag plated surface positioned on the lead frame, an adhesion promotion layer positioned on the top of the Ag plated surface, and mold body covering the top of the lead frame is provided. The Ag plated surface covers a significant part of an interconnection area of the lead frame surface, and the Ag plating surface does not exceed the area of the mold body.

Abstract: A semiconductor device has wettable corner leads. A semiconductor die is mounted on a lead frame. Die bonding pads are electrically connected to leads of the lead frame. The die and electrical connections are encapsulated with a mold compound. The leads are exposed and flush with the corners of the device. The leads include dimples so that they are wettable, which facilitates inspection when the device is mounted on a circuit board or substrate.

Abstract: A lead frame (10) for a semiconductor device includes a first row of terminals (12) surrounding a die receiving area (14) and a second row of terminals (16) spaced from and surrounding the first row of terminals (12). The first and second rows of terminals (12, 16) have a first height (H1). The terminals (12) of the first row include a step (26) that has a greater height (H2). Bond wires (36) connecting die pads (34) to the first row terminals (12) extend over the second height H2 part of the terminal (12) and are attached to the first height H1 part of the terminal (12). The step (26) insures that the bond wires (36) attached to the stepped terminals (12) have a high wire kink profile so that they are less susceptible to damage in later process steps.

Abstract: An image sensor device includes a QFN type leadframe having a central die attach flag and an outer bonding pad area having a plurality of bonding pads. A sensor IC is attached to the flag. The IC has a first surface with an active area and a peripheral bonding pad area that includes bonding pads. Wires are wirebonded to respective ones of the IC bonding pads and corresponding ones of the leadframe bonding pads, thereby electrically connecting the IC and the leadframe. Stud bumps are formed on the first surface of the IC and a transparent cover is disposed over the IC active area and resting on the stud bumps. The cover allows light to pass therethrough onto the IC active area. A mold compound is formed over the leadframe, wirebonds and a peripheral portion of the cover.

Abstract: A semiconductor device 30 includes a base carrier 32, an adhesive material layer 36 and an integrated circuit die 34. The base carrier 32 has a top side and a bottom side, the top side having a central area for receiving the die 34 and a peripheral area surrounding the central area. The adhesive material layer 36 is disposed on the top side of the base carrier in an “X” shaped pattern. The “X” shaped pattern includes two bisecting lines. The two bisecting lines extend well beyond the central area and into the peripheral area of the base carrier top surface. The die 34 is attached to the base carrier 32 with the adhesive material layer 36 at the central area. Even after attachment of the die 34, the adhesive material 36 extends well beyond the die 34 and the central area into the peripheral area.

Abstract: A semiconductor device 30 includes a base carrier 32, an adhesive material layer 36 and an integrated circuit die 34. The base carrier 32 has a top side and a bottom side, the top side having a central area for receiving the die 34 and a peripheral area surrounding the central area. The adhesive material layer 36 is disposed on the top side of the base carrier in an “X” shaped pattern. The “X” shaped pattern includes two bisecting lines. The two bisecting lines extend well beyond the central area and into the peripheral area of the base carrier top surface. The die 34 is attached to the base carrier 32 with the adhesive material layer 36 at the central area. Even after attachment of the die 34, the adhesive material 36 extends well beyond the die 34 and the central area into the peripheral area.

Abstract: A semiconductor device 30 includes a base carrier 32, an adhesive material layer 36 and an integrated circuit die 34. The base carrier 32 has a top side and a bottom side, the top side having a central area for receiving the die 34 and a peripheral area surrounding the central area. The adhesive material layer 36 is disposed on the top side of the base carrier in an “X” shaped pattern. The “X” shaped pattern includes two bisecting lines. The two bisecting lines extend well beyond the central area and into the peripheral area of the base carrier top surface. The die 34 is attached to the base carrier 32 with the adhesive material layer 36 at the central area. Even after attachment of the die 34, the adhesive material 36 extends well beyond the die 34 and the central area into the peripheral area.

Abstract: An image sensor device includes a QFN type leadframe having a central die attach flag and an outer bonding pad area having a plurality of bonding pads. A sensor IC is attached to the flag. The IC has a first surface with an active area and a peripheral bonding pad area that includes bonding pads. Wires are wirebonded to respective ones of the IC bonding pads and corresponding ones of the leadframe bonding pads, thereby electrically connecting the IC and the leadframe. Stud bumps are formed on the first surface of the IC and a transparent cover is disposed over the IC active area and resting on the stud bumps. The cover allows light to pass therethrough onto the IC active area. A mold compound is formed over the leadframe, wirebonds and a peripheral portion of the cover.

Abstract: An image sensor device includes a QFN type leadframe having a central die attach flag and an outer bonding pad area having a plurality of bonding pads. A sensor IC is attached to the flag. The IC has a first surface with an active area and a peripheral bonding pad area that includes bonding pads. Wires are wirebonded to respective ones of the IC bonding pads and corresponding ones of the leadframe bonding pads, thereby electrically connecting the IC and the leadframe. Stud bumps are formed on the first surface of the IC and a transparent cover is disposed over the IC active area and resting on the stud bumps. The cover allows light to pass therethrough onto the IC active area. A mold compound is formed over the leadframe, wirebonds and a peripheral portion of the cover.

Abstract: A semiconductor device 30 includes a base carrier 32, an adhesive material layer 36 and an integrated circuit die 34. The base carrier 32 has a top side and a bottom side, the top side having a central area for receiving the die 34 and a peripheral area surrounding the central area. The adhesive material layer 36 is disposed on the top side of the base carrier in an “X” shaped pattern. The “X” shaped pattern includes two bisecting lines. The two bisecting lines extend well beyond the central area and into the peripheral area of the base carrier top surface. The die 34 is attached to the base carrier 32 with the adhesive material layer 36 at the central area. Even after attachment of the die 34, the adhesive material 36 extends well beyond the die 34 and the central area into the peripheral area.

Abstract: The disclosure concerns an electronic device, for example a radio-alarm clock, that can be powered from the mains power supply or from batteries and can operate without interruption when changing from one of these power supplies to the other. It comprises a support connected to the mains and a mobile part that can be placed in electrical contact with said support and that includes at least one electronic circuit requiring power. This electronic circuit is powered from the mains via a first diode when said mobile part is placed in electrical contact with said support, and is powered by at least one battery via a second diode when said mobile part is removed from said support.