Patents by Inventor Wai Kin Chim

Wai Kin Chim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process to manufacture nonvolatile MOS memory device
    Patent number: 6962850
    Abstract: Devices with embedded silicon or germanium nanocrystals, fabricated using ion implantation, exhibit superior data-retention characteristics relative to conventional floating-gate devices. However, the prior art use of ion implantation for their manufacture introduces several problems. These have been overcome by initial use of rapid thermal oxidation to grow a high quality layer of thin tunnel oxide. Chemical vapor deposition is then used to deposit a germanium doped oxide layer. A capping oxide is then deposited following which the structure is rapid thermally annealed to synthesize the germanium nanocrystals.
    Type: Grant
    Filed: October 1, 2003
    Date of Patent: November 8, 2005
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Vincent Ho, Wee Kiong Choi, Lap Chan, Wai Kin Chim, Vivian Ng, Cheng Lin Heng, Lee Wee Teo
  • Nanocrystal flash memory device and manufacturing method therefor
    Patent number: 6656792
    Abstract: A Flash memory is provided having a trilayer structure of rapid thermal oxide/germanium (Ge) nanocrystals in silicon dioxide (SiO2)/sputtered SiO2 cap with demonstrated via capacitance versus voltage (C-V) measurements having memory hysteresis due to Ge nanocrystals in the middle layer of the trilayer structure. The Ge nanocrystals are synthesized by rapid thermal annealing of a co-sputtered Ge+SiO2 layer.
    Type: Grant
    Filed: March 1, 2002
    Date of Patent: December 2, 2003
    Assignee: Chartered Semiconductor Manufacturing LTD
    Inventors: Wee Kiong Choi, Wai Kin Chim, Vivian Ng, Lap Chan
  • Nanocrystal flash memory device and manufacturing method therefor
    Publication number: 20030077863
    Abstract: A Flash memory is provided having a trilayer structure of rapid thermal oxide/germanium (Ge) nanocrystals in silicon dioxide (SiO2)/sputtered SiO2 cap with demonstrated via capacitance versus voltage (C-V) measurements having memory hysteresis due to Ge nanocrystals in the middle layer of the trilayer structure. The Ge nanocrystals are synthesized by rapid thermal annealing of a co-sputtered Ge+SiO2 layer.
    Type: Application
    Filed: March 1, 2002
    Publication date: April 24, 2003
    Inventors: Wee Kiong Choi, Wai Kin Chim, Vivian Ng, Lap Chan
  • Integrated emission microscope for panchromatic imaging, continuous wavelength spectroscopy and selective area spectroscopic mapping
    Patent number: 5724131
    Abstract: An integrated emission microscope with an emitted radiation detection system for collecting and analyzing radiation from a device under test. A semi-ellipsoidal mirror of high ellipticity directs emitted radiation from the device under test through an aperture to a radiation guide, Which transmits the radiation to spectral analyzer. The device under test may be mounted on a scanning stage. The system permits high spatial resolution selected area spectroscopic analysis, panchromatic imaging, and spectroscopic mapping of the emitted radiation from the device under test.
    Type: Grant
    Filed: August 4, 1995
    Date of Patent: March 3, 1998
    Assignee: The National University of Singapore
    Inventors: Wai Kin Chim, Daniel Siu Hung Chan, Jacob Chee Hong Phang, Jing Mei Tao, Yong Yu Liu