Patents by Inventor Wai-Yi Lin

Wai-Yi Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11961892
    Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.
    Type: Grant
    Filed: June 10, 2022
    Date of Patent: April 16, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Carlos H. Diaz, Chung-Cheng Wu, Chia-Hao Chang, Chih-Hao Wang, Jean-Pierre Colinge, Chun-Hsiung Lin, Wai-Yi Lien, Ying-Keung Leung
  • Patent number: 11929417
    Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.
    Type: Grant
    Filed: June 30, 2022
    Date of Patent: March 12, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Carlos H. Diaz, Chung-Cheng Wu, Chia-Hao Chang, Chih-Hao Wang, Jean-Pierre Colinge, Chun-Hsiung Lin, Wai-Yi Lien, Ying-Keung Leung
  • Publication number: 20040114395
    Abstract: A direct-type backlight module. The direct-type backlight module includes a first diffuser, a prism, a second diffuser, a reflector and a tube. The prism is disposed under the first diffuser. The second diffuser is disposed under the prism. The reflector is disposed under the second diffuser and has a plurality of protruding reflecting portions. The protruding reflecting portions are separated from each other by a predetermined distance. The tube is disposed between the second diffuser and the reflector. The tube is positioned between two contiguous protruding reflecting portions of the reflector. Light emitted from the tube is reflected upward into the second diffuser, the prism and the first diffuser by the reflector and the protruding reflecting portions.
    Type: Application
    Filed: January 23, 2003
    Publication date: June 17, 2004
    Inventors: Ching-Hsiang Chan, Ming-Chun Hsiao, Kang-Hung Liu, Wai-Yi Lin