Patents by Inventor Wai Yuen FU

Wai Yuen FU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11688833
    Abstract: A nanostructure fabricated on a semiconductor light-emitting device induces strain in the active region. The active device includes at least one quantum heterostructure, in which the strain changes the extent of Quantum Confined Stark Effect, and thus modifies the wavelength of light emission. By mixing strain relaxation and strain induction effects there is a spectral broadening of the light emission, providing polychromatic light emission.
    Type: Grant
    Filed: May 17, 2021
    Date of Patent: June 27, 2023
    Assignee: VERSITECH LIMITED
    Inventors: Hoi Wai Choi, Wai Yuen Fu
  • Publication number: 20210273140
    Abstract: A nanostructure fabricated on a semiconductor light-emitting device induces strain in the active region. The active device includes at least one quantum heterostructure, in which the strain changes the extent of Quantum Confined Stark Effect, and thus modifies the wavelength of light emission. By mixing strain relaxation and strain induction effects there is a spectral broadening of the light emission, providing polychromatic light emission.
    Type: Application
    Filed: May 17, 2021
    Publication date: September 2, 2021
    Applicant: VERSITECH LIMITED
    Inventors: Hoi Wai CHOI, Wai Yuen FU
  • Patent number: 11094855
    Abstract: A nanostructure fabricated on a semiconductor light-emitting device induces strain in the active region. The active device includes at least one quantum heterostructure, in which the strain changes the extent of Quantum Confined Stark Effect, and thus modifies the wavelength of light emission. By mixing strain relaxation and strain induction effects there is a spectral broadening of the light emission, providing polychromatic light emission.
    Type: Grant
    Filed: March 12, 2018
    Date of Patent: August 17, 2021
    Assignee: Versitech Limited
    Inventors: Hoi Wai Choi, Wai Yuen Fu
  • Publication number: 20200135982
    Abstract: A nanostructure fabricated on a semiconductor light-emitting device induces strain in the active region. The active device includes at least one quantum heterostructure, in which the strain changes the extent of Quantum Confined Stark Effect, and thus modifies the wavelength of light emission. By mixing strain relaxation and strain induction effects there is a spectral broadening of the light emission, providing polychromatic light emission.
    Type: Application
    Filed: March 12, 2018
    Publication date: April 30, 2020
    Applicant: Versitech Limited
    Inventors: Hoi Wai CHOI, Wai Yuen FU
  • Patent number: D430220
    Type: Grant
    Filed: February 25, 2000
    Date of Patent: August 29, 2000
    Inventor: John Wai Yuen Fu