Abstract: A method includes providing a substrate; forming, on the substrate, an overlapping layer in which first materials and second materials are sequentially stacked; forming a first mask layer on the overlapping layer; forming a first trench in the first mask layer; forming a second trench in the first trench by forming a second mask layer in the first mask layer and the first trench; etching, through anisotropic etching, the second mask layer along a direction perpendicular to the substrate, until the second mask layer that is located between sides of the second trench and on a lower surface of the first trench is removed to form a third trench based on the second trench; etching downwards from a lower surface of the third trench to form a fourth trench that penetrates the overlapping layer; and forming a sidewall in the fourth trench.

Abstract: System and method for test structure on a wafer. According to an embodiment, the present invention provides a test structure for testing an integrated circuit. For example, the test structure and the integrated circuit are manufactured on a same substrate material and the testing being conducted is in a temperature-controlled environment. The test structure includes a top structure positioned above the integrated circuit, the top structure including a first metal material, which includes a first electrical terminal and a second electrical terminal. The test structure also includes a bottom structure positioned below the integrated circuit, the bottom structure including a first silicon material. A first side structure is positioned between the top structure and the bottom structure and located next to a first side of the integrated circuit. A second side structure is positioned between the top structure and the bottom structure and located next to a second side of the integrated circuit.

Abstract: System and method for test structure on a wafer. According to an embodiment, the present invention provides a test structure for testing a chip. For example, the test structure and the chip are manufactured on a same substrate material and the testing being conducted is in a temperature-controlled environment. The test structure includes a top structure positioned above the chip. For example, the top structure can be characterized by a first surface area. The top structure includes a first metal material occupying less than 60% of the surface area. The test structure also includes a bottom structure positioned below the chip. For example, the bottom structure can be characterized by a second surface area. The second surface area is substantially equal to the first surface area. The bottom structure includes a first silicon material. The first silicon material occupies substantially all of the second surface area.

Abstract: System and method for test structure on a wafer. According to an embodiment, the present invention provides a test structure for testing a chip. For example, the test structure and the chip are manufactured on a same substrate material and the testing being conducted is in a temperature-controlled environment. The test structure includes a top structure positioned above the chip. For example, the top structure can be characterized by a first surface area. The top structure includes a first metal material occupying less than 60% of the surface area. The test structure also includes a bottom structure positioned below the chip. For example, the bottom structure can be characterized by a second surface area. The second surface area is substantially equal to the first surface area. The bottom structure includes a first silicon material. The first silicon material occupies substantially all of the second surface area.

Abstract: A time delay circuit including a first transistor having a gate, a drain, a source, and a channel between the source and the drain. The input voltage is applied between the gate and drain and the output is taken between the source and drain. The output voltage follows the gate voltage, and the first transistor gate voltage is substantially constant. The time delay circuit also includes a delay element. The output voltage of the first transistor biases the delay element.

Abstract: A time delay circuit including a first transistor having a gate, a drain, a source, and a channel between the source and the drain. The input voltage is applied between the gate and drain and the output is taken between the source and drain. The output voltage follows the gate voltage, and the first transistor gate voltage is substantially constant.